175 Great Valley Parkway, Malvern, PA 19355
U S A
ON-STATE CHARACTERISTIC
0.01
0.1
1
10
Zthj-C degC/W
Power On-time in Seconds
Power On-time in Seconds
.001
.03
.01
.02
.003
.005
.007
Rthj-c(dc)= .023 C/W
MODEL
V
DRM
/ V
RRM
-40 to +125
o
C
C714L
2000 Volts
Type C714 reverse blocking thyristor is suitable for inverter applications which do not employ an inverse
parallel free wheeling diode and for which reverse recovery losses at elevated frequencies can be
significant. The silicon junction is manufactured by the proven multi-diffusion process and utilizes the
exclusive involute gate structure. It is supplied in an industry accepted disc-type package, ready to mount
using commercially available heat dissipators and mechanical clamping hardware.
INVERTER THYRISTO R
C714
53mm / 2000V / 40us/ 750Hz
THERMAL IMPEDANCE
100
1000
10000
0
1
2
3
4
5
6
On-State Current, It (A)
On-State Voltage, Vt (V)
On-State Voltage, Vt (V)
V845onst
Process Limit
Pulsed Currents
Tcase = 125 C
Case Temperature, Tcase (degC)
Peak Current, It (amperes)
60
65
70
75
80
0
500
1,000
1,500
2,000
2,500
3,000
3,500
v845tc
half sine; 1200V bus; no reverse voltage
trapezoidal pulse with reverse voltage
di/dt = 75A/us
commutating voltage = 800Vdc
snubber: R=13 ohms C=0.5uF
operating frequency 750 Hz
@ 50% duty cycle
p1 7/20/99
replaces
6/3/93
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
B
B
A
2 0 5
D
CL
CL
J
A
A
A
A
A
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
B
B
B
B
B
=1.90 in (48.3 mm)
=1.90 in (48.3 mm)
=1.90 in (48.3 mm)
=1.90 in (48.3 mm)
=1.90 in (48.3 mm)
D=1.07 in (27.2 mm)
D=1.07 in (27.2 mm)
D=1.07 in (27.2 mm)
D=1.07 in (27.2 mm)
D=1.07 in (27.2 mm)
LIMITING CHARACTERISTICS
Pulse Width, tp (us)
Peak Current, It (A)
10
100
1,000
10,000
100
1,000
10,000
40
20
10
1.5
1.0
.6
.5
.4
.3
.2
.1
Energy
watt-sec
per pulse
v845sne.ch3
Half-Sine Pulses
6
3
2
t
I
p
t
4
5
Pulse Width, tp (us)
Peak Current, It (A)
100
1,000
10,000
100
1,000
10,000
40
20
10
1.5
1.0
.6
.5
.4
.3
.2
.1
Energy
watt-sec
per pulse
v845tre2.ch3
3
Trapezoidal Pulses
di/dt=50A/us
2
6
I
t
p
di/dt
t
5
4
Pulse Width, tp (us)
Peak Current, It (A)
100
1,000
10,000
100
1,000
10,000
40
20
10
5
1.5
1.0
.6
.5
.4
.3
.2
.1
Energy
watt-sec
per pulse
v845tre1.ch3
4
3
Trapezoidal Pulses
di/dt=100A/us
6
I
t
p
di/dt
t
2
TEST
PARAMETER
SYMBOL
CONDITIONS
LIMIT
UNITS
Average on-state
I
T(av)
Tcase = 70
o
C
925
A
current
750 Hz with FWD
Repetitive peak off-
V
DRM
/V
RRM
T
J
= -40
2000
volts
state & reverse
to +125
o
C
voltage
Off-state & reverse
I
DRM
/I
RRM
T
j
= 125
o
C
60
ma
current
Peak half cycle
I
TSM
60Hz (8.3ms
16
kA)
non-repetitive
50Hz (10ms)
14.7
surge current
On-state voltage
V
TM
I
T
= 1000A
1.95
volts
t
P
= 8.3ms
T
J
= 125
o
C
Critical rate of
di/dt
rep
V
D
= 1500V
200
A/us
rise of on-state
di/dt
non-rep
Tj=125
o
C
800
current
see gate drive
Critical rate of
dv/dt
V
DCRIT
= 80%V
DRM
500
v/us
rise of off-state
T
j
= 125
o
C
voltage
Peak recovery
I
RM
T
J
= 125
o
C
current
@ 10A/us
56
A
@ 50A/us
214
@ 100 A/us
368
Circuit commutated
t
Q
400 V/us to 70% V
DRM
turn-off time
Vr =
> 50
V
40
us
Vr = 2 V
45
P2 7/20/99
C714
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
3000
3500
AVERAGE POWER LOSS
half sine wave
Full Cycle Average Power, (W)
V845snp
50% duty cycle @ freq
NO REVERSE LOSSES
Tcase = 65 C
Tj = 125 C
50 Hz
1000 Hz
2608 watts maximum allowable
Peak Current, Itm (A)
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
AVERAGE POWER LOSS
trapezoidal current wave
Full Cycle Average Power (W)
Peak Current, Itm (A)
Peak Current, Itm (A)
V845Ptr2
50% duty cycle @ freq
NO REVERSE LOSSES
Tcase = 65 C
Tj = 125 C
50 Hz
1000 Hz
di/dt = 50A/us
2608 watts maximum allowable
C714
P3 7/20/99
Operating Frequency, Hz.
Peak Current, It (amperes)
0 100 200 300 400 500 600 700 800 900 1,000
0
500
1,000
1,500
2,000
2,500
3,000
3,500
Peak Current Capability
versus operating frequency
half sine & trapezoidal @ 50% duty cycle
v845tc1
half sine; 1200V bus; no reverse voltage
trapezoidal pulse with reverse voltage
commutating voltage = 800Vdc
snubber: R=13 ohms C=0.5uF
Rthj-water = 0.32degC/watt
inlet water = 45 deg
di/dt
(A/us)
25
50
75
100
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
AVERAGE POWER LOSS
trapezoidal current wave
Full Cycle Average Power (W)
Peak Current, Itm (A)
Peak Current, Itm (A)
V845Ptr1
50% duty cycle @ freq
NO REVERSE LOSSES
Tcase = 65 C
Tj = 125 C
50 Hz
1000 Hz
500 Hz
di/dt = 100A/us
2608 watts maximum allowable
correction: Rth-water
= 0.032
o
C/watt
P4 7/20/99
1
10
0.1
1
24
14.7
0.432
1.08
1
10
Surge On-State Current
Peak Half-Sine vs. Pulse Length
Itsm (kA)
Pulse Width - milliseconds
I2t
Pulse Width - milliseconds
v845itsm
A S
2
E6
3
5
non-repetitive
50
5
C714
0
1
2
3
4
0
100
200
300
400
0.269
0.492
0.676
0.842
124
214
293
368
25
50
75
100
Maximum Peak Recovery Current
and Reverse Commutation Energy
for recommended circuit conditions
Energy (watt-sec-per single)
Circuit Commutating di/dt, (A/us)
Circuit Commutating di/dt, (A/us)
v845re
Irm
amperes
Irm
E
snubber: R=13 ohms, C=1.0uF
commutating voltage = 800 Vdc
snappiness S = 0.5
0
5
10
15
20
25
30
0
0.5
1
1.5
2
Peak Voltage (supply or gate) volts
Peak Current (supply or gate) amperes
Peak Current (supply or gate) amperes
w192: gatedr
load line
OC = 30V
SS = 3 A
rise time 0.5 Us
thyristor
gate
Recommended Gate Drive
10
100
0
0.25
0.5
0.75
1
1.25
1.5
Maximum Repetitve Snubber Discharge
Snubber Dump, (A)
Gate Signal Risetime, (us)
Gate Signal Risetime, (us)
30V open circuit
3A short circuit
200
in 0.5 us
Recommended Gate Drive
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