ChipFind - документация

Электронный компонент: SDD303

Скачать:  PDF   ZIP
REV C 8/10/2001
SDD303KT
SDD303KT
SDD303KT
SDD303KT
SDD303KT
100mm RECTIFIER DIODE
100mm RECTIFIER DIODE
100mm RECTIFIER DIODE
100mm RECTIFIER DIODE
100mm RECTIFIER DIODE
6000
6000
6000
6000
6000 V
V
V
V
Volts / 3500
olts / 3500
olts / 3500
olts / 3500
olts / 3500 Amp
Amp
Amp
Amp
Amp
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
35
40
45
50
55
60
EI-CHARACTERISTICS
Process Maximum
Instantaneous Voltage, Vf (V)
Instantaneous Current, If (kA)
Instantaneous Current, If (kA)
89A:
Initial Tj
25 C
150 C
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. TIME
Junction to Case (DC)
Zthj-c degC/W
On-Time (milliseconds)
On-Time (milliseconds)
Rthj-c = .007 degC/W
add .002 to .003
for Rthc-s interface
.01
.001
.0001
.00001
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
Operating Temperature Range
-40
o
C to +150
o
C
Rep.Peak Reverse Voltage & Current
V
R R M
= 6000 V ; I
R R M
=100 mA
Non Repetitive Peak Surge Current
I
F S M
(8.3 ms,V
R
=0) = 60000 A
Maximum Peak Recovery Current
I
R M
(150
o
C,140A/us) = 1900 A
(RC snubber required)
Maximum Average Current
I
F(AV)
= 3500A @T
case
=100
o
C
PRINCIPAL LIMITS AND RATINGS
PRINCIPAL LIMITS AND RATINGS
PRINCIPAL LIMITS AND RATINGS
PRINCIPAL LIMITS AND RATINGS
PRINCIPAL LIMITS AND RATINGS
89a:
175 Great Valley Pkwy. Malvern, PA 19355
U S A
The SDD303 rectifier diode features a nominal 100mm diameter silicon junction design, manufactured
by the proven multi-diffusion process.
SDD303 is designed specifically for high current surges as appropriate for pulse power applications.
ELECTRICAL CREEPAGE
1.6 / 1.0 in
40.6 / 25.4 mm
CLAMPING FORCE REQUIRED
17000 - 19000 lb.
75 - 85 kN
A
A
A
A
A F
F
F
F
F = 5.65 in (143.5 mm)
= 5.65 in (143.5 mm)
= 5.65 in (143.5 mm)
= 5.65 in (143.5 mm)
= 5.65 in (143.5 mm)
B
B
B
B
B F
F
F
F
F =3.92 in (99.4 mm)
=3.92 in (99.4 mm)
=3.92 in (99.4 mm)
=3.92 in (99.4 mm)
=3.92 in (99.4 mm)
D=1.45 in (36.8 mm)
D=1.45 in (36.8 mm)
D=1.45 in (36.8 mm)
D=1.45 in (36.8 mm)
D=1.45 in (36.8 mm)
B
B
A
D
20 5
J
CL
CL
REV C 8/10/01
LIMITING CHARACTERISTICS AND RATINGS
TEST
MAX.
P A R A M E T E R
S Y M B O L
CONDITIONS
VALUES
UNITS
Average
I
A V
half sine
3500
A
current
T
C
=100
o
C
Repetitive
V
R R M
T
J
= 0
6000
V
peak reverse
to +150
o
C
voltage
50/60 Hz
Repetitve
I
R R M
T
J
=150
o
100
ma
peak reverse
25
o
15
current
Forward
V
F M
2kA , 25
o
C
1.20
V
voltage
22kA ,150
o
C
3.75
8ms pulse
Non-rep peak
I
F S M
T
J
=150
o
surge current
t
p
=8.3ms
60
kA
t
p
=10ms
55
Peak recovery
I
R M
5500A pulse (snubber, 2.3uF/2 ohms)
current
80A/us
1385A
Tj=150
o
C snappiness "S" approx.= 1
0
1
2
3
4
5
6
7
8
9
10
0
500
1000
1500
2000
2500
3000
3500
4000
Full Cycle Average Power Dissipation
@ Tj = 150 degC
Average Power (kW)
Average Current (amperes)
Average Current (amperes)
89a:
120 deg Sq.
180 deg
1 ph.
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
@ Tj = 150
o
C
I
A V G
120
o
half
(A)
sq. wave
sine
500
523
466
1000
1322
1215
1500
2268
2092
2000
3367
3096
2500
4632
4232
3000
6071
5508
3500
7696
6931
4000
9514
8508
SDD303KT