5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-70C2
Planar Photodiode
Features
Planar photodiode
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
Multiple dark current ranges available
Description
The planar photodiode is designed to operate in either
photoconductive or photovoltaic modes. High sensitivity
and low dark current allow use in even low irradiance
applications. The photodiode is supplied on a ceramic
base with a clear epoxy dome package.
Absolute Maximum Ratings
Storage Temperature
-20
C to +75
C
Operating Temperature
-20
C to +75
C
Soldering Temperature (3)
260
C
Notes: (1) Ee = source @ 2854
K.
(2) Ee = source @
= 880 nm
(3) >2 mm from case for < 5 sec.
Chip Size = 3.6 mm X 3.6 mm
Active Area = 9.8 sq.mm.
Optical
Clear Epoxy
Anode
Cathode
Dimensions in mm.(+/- 0.2)
max.
Red dot
1.9
38 nom.
6.3
7.2
3.4
0.50 - 0.52
5.1
1.0
0.8
0.6
0.4
100
90
80
70
60
50
40
30
20
10
Half Angle = 60
Directional Sensitivity Characteristics
20
40
60
80
100 120
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
I
SC
Short Circuit Current
450
700
A
V
R
=0V, Ee=25mW/cm
2
(1)
V
OC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
I
D
Reverse Dark Current:
SLD-70C2A
100
nA
V
R
=100mV, Ee=0
SLD-70C2B
100
nA
V
R
=5V, Ee=0
SLD-70C2C
20
nA
V
R
=5V, Ee=0
SLD-70C2D
5
nA
V
R
=5V, Ee=0
SLD-70C2E
1
nA
V
R
=5V, Ee=0
C
J
Junction Capacitance
180
pF
V
R
=0, Ee=0, f=1MHz
t
R
Rise Time
4
s
V
R
=5V, R
L
=1k
(2)
t
F
Fall Time
6
s
V
R
=5V, R
L
=1k
(2)
TC
I
Temp. Coef., I
SC
+0.2
%/
C
(1)
V
BR
Reverse Breakdown Voltage
50
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
930
nm
R
Sensitivity Spectral Range
400
1100
nm
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice.
101407 REV 4
PDF 
ZIP