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for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-104208 Rev C
The SDM-08060-B1F 60W power
module is an impedance matched,
single-stage, push-pull Class AB
amplifier module suitable for use as a
power amplifier driver or output stage.
It is a drop-in, no-tune solution for high
power applications requiring high
efficiency, excellent linearity, and
unit-to-unit repeatability.
Key Specifications
Parameter
Description: Test Conditions
Z
in
= Z
out
= 50
, V
DD
= 28.0V, I
DQ1
=300mA, I
DQ2
=300mA
T
Flange
= 25C
Unit
Min.
Typ.
Max.
Frequency
Frequency of Operation
MHz
869
-
894
P
1dB
Output Power at 1dB Compression, 881 MHz
W
60
65
-
Gain
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
dB
16
17
-
Gain Flatness
Peak to Peak Gain Variation, 869 - 894MHz
dB
-
0.3
.5
Efficiency
Drain Efficiency at 60W PEP, 880MHz and 881MHz
%
32
34
-
IRL
Input Return Loss 12W CW Output Power, 869 - 894MHz
dB
-
-15
-12
IMD
3rd Order IMD Product, 60W PEP, 880MHz and 881MHz
dBc
-
-31
-28
Delay
Signal Delay from Pin 3 to Pin 8
nS
-
4.0
-
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
-
0.5
-
Functional Block Diagram
SDM-08060-B1F
869-894 MHz Class AB
60W Power Amplifier Module
Product Features
Application
50 W RF impedance
60W Output P
1dB
28 Volt Operation
High Gain: 17 dB Typical
High Efficiency
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Product Description
+28V DC
+3V DC to +6 V DC
+28V DC
+3V DC to +6 V DC
2
Vds
Vds
1
out
RF
RF
in
Gnd
Gnd
Gnd
Gnd
Vgs
2
1
Vgs
o
o
o
o
0
180
0
180
Balun
Balun
Case Flange = Ground
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-104208 Rev C
SDM-08060-B1F 869-894 MHz 60W Amp
Pin Out Description
Pin #
Function
Description
1,5
V
GS
This is the gate bias for each half of the amplifier module.
2,4,7,9
Ground
Module Topside ground.
3
RF Input
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.
Care must be taken to protect against video transients that may damage the active devices.
6,10
V
DD
This is the drain feed for the amplifier module. See Note 1.
8
RF Output
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.
Care must be taken to protect against video transients that may damage the active devices.
Flange
Gnd
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the
board for optimum thermal and RF performance. See mounting instructions for recommendation.
Simplified Device Schematic
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (V
DD
)
35
V
RF Input Power
+37
dBm
Load Impedance for Continuous Operation
Without Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
15
V
Output Device Channel Temperature
+200
C
Operating Temperature Range
-20 to +90
C
Storage Temperature Range
-40 to +100
C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation see
typical setup values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Note 1:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 2:
Gate voltage must be applied coincident with or after applica-
tion of the drain voltage to prevent potentially destructiveo-
scillations. Bias voltages should never be applied to a module
unless it is terminated in 50 ohms on both input and output.
Note 3:
The VGS corresponding to a specific IDQ will vary from mod-
ule to module and may vary between the two sides of a dual
RF module by as much as 0.10 volts. This is due to the nor-
mal die-to-die variation in threshold voltage of LDMOS tran-
sistors.
Note 4:
Since the gate bias of an LDMOS transistor changes with
device temperature, it may be necessary to use a VGS sup-
ply with thermal compensation if operation over a wide tem-
perature range is required.
Note 5:
This module was designed to have it's leads hand soldered to
an adjacent PCB. The maximum soldering iron tip tempera-
ture should not exceed 700 C, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN054 (www.sirenza.com) for
further installation instructions.
Q1
Q2
Case Flange = Ground
1
2
3
4
5
6
7
8
9
10
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-104208 Rev C
SDM-08060-B1F 869-894 MHz 60W Amp
2 Tone Gain, Efficiency, IMDs, IRL vs Frequency
Vdd=28V, Idq=600mA, Pout=60W PEP, Delta F=1 MHz
0
5
10
15
20
25
30
35
40
850
860
870
880
890
900
910
920
930
Frequency (MHz)
G
a
i
n
(
d
B
)
,
E
f
f
i
ci
e
n
cy (
%
)
-80
-70
-60
-50
-40
-30
-20
-10
0
IMD
s
(d
B
c
)
IR
L
(d
B
)
Gain
Efficiency
IMD3
IMD5
IMD7
IRL
2 Tone Gain, Efficiency, IMDs vs Pout
Vdd=28V, Idq=600mA, Freq=881 MHz, Delta F=1 MHz
0
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
60
70
80
Pout (W PEP)
G
a
i
n
(
d
B)
,
Ef
f
i
c
i
e
n
c
y
(
%
)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
IM
D
s
(
d
B
c
)
Gain
Efficiency
IMD3
IMD5
IMD7
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=600mA, Pout=60W
0
5
10
15
20
25
30
35
40
45
50
850
860
870
880
890
900
910
Frequency (MHz)
G
a
i
n
(
d
B
)
,
E
f
f
i
ci
e
n
cy (
%
)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
IR
L
(
d
B
)
Gain
Efficiency
IRL
CW Gain, Efficiency, IRL vs Supply Voltage
Pout=60W, Idq=600mA, Freq=881 MHz
0
10
20
30
40
50
60
70
18
20
22
24
26
28
30
Vds (Volts)
Ga
in
(d
B
)
, E
f
f
i
c
i
e
n
c
y
(%
)
-35
-30
-25
-20
-15
-10
-5
0
IR
L
(d
B
)
Gain
Efficiency
IRL
Two Tone Gain, Efficiency, IRL, IMDs vs Supply Voltage
Pout=60W PEP, Idq=600mA, Freq=881 MHz, Delta F=1 MHz
0
10
20
30
40
50
60
19
20
21
22
23
24
25
26
27
28
29
30
Vds (Volts)
G
a
in
(
d
B)
, Ef
f
i
cien
cy (
%
)
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
IR
L
(
d
B)
IM
Ds (d
Bc)
Gain
Efficiency
IRL
IM3
IM5
IM7
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=600mA, Freq=881 MHz
8
9
10
11
12
13
14
15
16
17
18
19
20
0
10
20
30
40
50
60
70
80
Pout (W PEP)
G
ain (
d
B
)
0
5
10
15
20
25
30
35
40
45
50
55
60
E
f
f
i
ci
e
n
cy (
%
)
Gain
Efficiency
Typical Performance Curves
Quality Specifications
Parameter
Unit
Min
Typical
Max
ESD Rating
Human Body Model
V
2000
MTTF
85
o
C Leadframe, 200
o
C Channel
H
1.2 X 10
6
R
TH
Thermal Resistance (Junction to Case)
C/W
1.5
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
4
EDS-104208 Rev C
SDM-08060-B1F 869-894 MHz 60W Amp
Package Outline Drawing
11029
Note:
Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL.
CW Gain vs Pout for various Idq
Vds=28V, Freq=881 MHz
16
17
18
19
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
Pout (W)
Ga
in
(d
B
)
Idq=400mA
Idq=700mA
Idq=500mA
Idq=600mA
Idq=800mA
IM3 vs Pout for varrious Idq
Vds=28V, Freq=881 MHz, Delta F=1 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
35
40
45
50
55
60
65
Pout (W PEP)
Gai
n
(
d
B
)
Idq=.4A
Idq=.7A
Idq=.5A
Idq=.6A
Idq=.8A
Typical Performance Curves (cont'd)
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