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Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103099 Rev F
Sirenza Microdevices' SGB-6533 is a high performance SiGe HBT
MMIC amplifier utilizing a Darlington configuration with an active bias
network. The active bias network provides stable current over tempera-
ture and process Beta variations. Designed to run directly from a 5V
supply the SGB-6533 does not require a drop resistor as compared to
typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance , and unconditional stability. The
SGB-6533 product is designed for high linearity 5V gain block applica-
tions that require small size and minimal external components. It is on
chip matched to 50 ohm and an external bias inductor choke is required
for the application band.
This product is available in a RoHS Compliant and Green package with
matte tin finish, designated by the "Z" package suffix.
Key Specifications
Symbol
Parameters: Test Conditions
Z
0
= 50
, V
CC
= 5.0V, Ic = 88mA, T
= 30C)
Unit
Min.
Typ.
Max.
f
O
Frequency of Operation
MHz
DC
3000
S
21
Small Signal Gain 850MHz
dB
25.0
Small Signal Gain 1950MHz
17.0
18.5
20.0
Small Signal Gain 2400MHz
17.0
P
1dB
Output Power at 1dB Compression 850MHz
dBm
19.0
Output Power at 1dB Compression 1950MHz
17.0
18.5
Output Power at 1dB Compression 2400MHz
18.0
OIP3
Output IP3 850MHz
32.0
Output IP3 1950MHz
dB
30.0
32.0
Output IP3 2400MHz
32.0
IRL
Input Return Loss @ 1950MHz
dB
11.0
15.0
ORL
Output Return Loss @1950MHz
dB
10.0
14.0
Ic
Current
mA
76
88
98
NF
Noise Figure @1950MHz
dB
3.7
4.7
R
th, j-l
Thermal Resistance (junction - lead)
C/W
60
Functional Block Diagram
SGB-6533
SGB-6533Z
DC 3 GHz Active Bias Gain Block
Product Features
Applications
Available in Lead Free, RoHS compliant, & Green
Packaging
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 18.5 dBm @ 1950MHz
IP3 = 32 dBm @ 1950MHz
Low Thermal Resistance = 60 C/W
5V applications
LO buffer amp
RF pre-driver and RF receive path
Product Description
VC
C
NC
NC
GN
D
NC
NC
NC
Vb
i
a
s
NC
NC
NC
RFIN
NC
RFOUT
NC
NC
Active
Bias
Pb
RoHS Compliant
&
Package
Green
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-103099 Rev F
SGB-6533 DC-3GHz Active Bias Gain Block
Pin Out Description
Pin #
Function
Description
1,2,4, 6,
7,8,11,
12,14
NC
These are no connect pins. Leave them unconnected on the PC board.
3
RFIN
RF input pin. A DC voltage should not be connected externally to this pin
5
GND
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
10
RFOUT
RF Output pin. Bias is applied to the Darlington stage thru this pin.
13
VBIAS
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
16
VCC
This is Vcc for the active bias circuit.
Back-
side
GND
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It
is also the main thermal path.
Simplified Device Schematic
16
1
4
5
8
9
12
13
15
14
2
3
11
10
6
7
Active
Bias
Absolute Maximum Ratings
Parameters
Value
Unit
Current (Ic total)
150
mA
Device Voltage (V
D
)
6.5
V
Power Dissipation
0.75
W
Operating Lead Temperature (T
L
)
-40 to +85
C
RF Input Power, Zload = 50 ohm
15
dBm
RF Input Power, Zload > 10:1 VSWR
7
dBm
Storage Temperature Range
-40 to +150
C
Operating Junction Temperature (T
J
)
+150
C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH'
j-l
Detailed Performance Table: Vcc=5V, Ic=88mA, T=25C, Z=50ohms
Symbol
Parameter
Units
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
G
Small Signal Gain
dB
28.4
26.9
25.0
18.5
17.0
13.1
OIP3
Output 3rd Order Intercept Point
dBm
32.0
32.0
32.0
32.0
P1dB
Output Power at 1dB Compression
dBm
19.1
19.0
18.5
18.0
IRL
Input Return Loss
dB
15.1
19.1
26.4
15.0
13.5
8.7
ORL
Output Return Loss
dB
21.4
18.5
15.3
14.0
11.9
13.6
S12
Reverse Isolation
dB
30.8
30.3
29.7
26.2
25.4
22.9
NF
Noise Figure
dB
4.6
3.1
3.1
3.7
4.2
4.9
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-103099 Rev F
SGB-6533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=V
BIAS
= 5.0V, I
c
= 88mA) Bias Tee is substituted for DC feed inductor (L1)
Ic vs. Temperature
0.070
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
+85c
+25c
-40c
Tem perature
Ic (mA)
Current vs. Voltage
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
6.2
Vc (Volts)
Ic (A
)
Noise Figure vs. Frequency
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Noi
se Fi
gure (
d
B)
+25c
+85c
-40c
P1dB vs. Frequency
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
0.4
0.9
1.4
1.9
2.4
Frequency (GHz)
P1dB (dBm
)
+25c
+85c
-40c
OIP3 vs. Frequency
28.0
29.0
30.0
31.0
32.0
33.0
34.0
0.4
0.9
1.4
1.9
2.4
Frequency (GHz)
OIP
3
(d
B
m
)
+25c
+85c
-40c
Gain vs. Frequency
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
0.4
0.9
1.4
1.9
2.4
Frequency (GHz)
Ga
in (dB)
+25c
+85c
-40c
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
4
EDS-103099 Rev F
SGB-6533 DC-3GHz Active Bias Gain Block
Evaluation Board Data (Vcc=V
BIAS
= 5.0V, I
c
= 88mA) Bias Tee is substituted for DC feed inductor (L1)
l S
11
l vs. Frequency
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
S
11
(d
B
)
+25c
+85c
-40c
l S
22
l vs. Frequency
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
S
22
(dB
)
+25c
+85c
-40c
l S
12
l vs. Frequency
-35.0
-30.0
-25.0
-20.0
-15.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
S
12
(d
B
)
+25c
+85c
-40c
l S
21
l vs. Frequency
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
S
21
(d
B)
+25c
+85c
-40c
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
5
EDS-103099 Rev F
SGB-6533 DC-3GHz Active Bias Gain Block
Typical Evaluation Board Schematic for 5.0V
RFIN
RFOUT
VC
C
NC
NC
O
p
t
i
onal
GN
D
NC
NC
NC
Vb
i
a
s
NC
NC
NC
RFIN
NC
RFOUT
NC
NC
Vcc
C1
C2
C3
C4
L1
1
1 6
1
C3
C2
C1
L1
C4
Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper
* C4 is optional depending on application and filtering. Not
required for SGB device operation.
Component Values By Band
Designator
500MHz
850MHz
1950MHz 2400MHz
C3
1000pF
1000pF
1000pF
1000pF
C4*
1uF
1uF
1uF
1uF
C1, C2
220pF
68pF
43pF
22pF
L1
68 nH
33nH
22nH
18nH
Note: The amplifier can be run from a 8V supply by simply
inserting a 33 ohm resistor in series with Vcc.
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