Product Description
EDS-101502 Rev C
1
Phone: (800) SMI-MMIC
http://www.sirenza.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
The SGL-0263 is a high performance SiGe HBT MMIC low noise am-
plifier featuring 1 micron emitters with F
T
up to 50 GHz. This device
has an internal temperature compensation circuit permitting opera-
tion directly from supply voltages as low as 2.5V. The SGL-0263 has
been characterized at Vd = 3V for low power and 4V for medium
power applications. Only 2 DC-blocking capacitors, 2 input matching
components, a bias resistor, and an optional RF choke are required
for operation from 1400-2500 MHz.
The matte tin finish on Sirenza's lead-free "Z" package is applied
using a post annealing process to mitigate tin whisker formation
and is RoHS compliant per EU Directive 2002/95. The package
body is manufactured with green molding compounds that contain
no antimony trioxide or halogenated fire retardants.
SGL-0263
SGL-0263Z
1400 - 2500 MHz Silicon Germanium
Cascadable Low Noise Amplifier
Product Features
Available in Lead Free, RoHS Compliant
green package ( Z Suffix )
High Input / Output Intercept
Low Noise Figure: 1.3dB typ. at 1900 MHz
Low Power Consumption
Single Voltage Supply Operation
Internal Temperature Compensation
Applications
Receivers, GPS
,
RFID
Cellular, Fixed Wireless, Land Mobile
RF In
RF Out / V
S
V
S
Temperature
Compensation
Circuit
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RoHS Compliant
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EDS-101502 Rev C
2
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 South Technology Court
Broomfield, CO 80021
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
Device Voltage (Vd) vs. Device Current (Id)
for T = -40C, +25C, & +85C
Load lines for Vs =+5 Volts, Rs=43
W
and 180
W
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6
8
10
12
14
16
18
20
22
24
26
Id (mA)
Vd
(Vo
l
ts
)
T=-40C
T=+25C
T=+85C
Vs= +5 V, Rs = 43
W
Vs = +5 V, Rs = 180
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Input IP3 vs. Frequency Over Temperature
4
6
8
10
12
14
16
18
20
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
I
nput
I
P
3 (
d
Bm)
T=-40C, VS=3 V
T=+25C, VS=3 V
T=+85C, VS=3 V
T=-40C, VS=4 V
T=+25C, VS=4 V
T=+85C, VS=4 V
P1dB vs. Frequency Over Temperature
0
2
4
6
8
10
12
14
16
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
P1dB (
d
Bm)
T=-40C, VS=3 V
T=+25C, VS=3 V
T=+85C, VS=3 V
T=-40C, VS=4 V
T=+25C, VS=4 V
T=+85C, VS=4 V
Noise Figure vs. Frequency at T
LEAD
=+25C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1400
1600
1800
2000
2200
2400
Freq. (MHz)
NF
(d
B)
Vs=3 V
Vs=4 V
Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board
Output IP3 vs. Frequency Over Temperature
18
20
22
24
26
28
30
32
34
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
Out
put
I
P
3 (
d
Bm
)
T=-40C, VS=3 V
T=+25C, VS=3 V
T=+85C, VS=3 V
T=-40C, VS=4 V
T=+25C, VS=4 V
T=+85C, VS=4 V
EDS-101502 Rev C
3
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 South Technology Court
Broomfield, CO 80021
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
NOTE: Full S-parameter data available at www.sirenza.com
0
4
8
12
16
20
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
21
(dB
)
|
S
11
|
vs. Frequency
|
S
21
|
vs. Frequency
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
-3 0
-2 6
-2 2
-1 8
-1 4
-1 0
1 3 0 0
1 5 0 0
1 7 0 0
1 9 0 0
2 1 0 0
2 3 0 0
2 5 0 0
F re q u e n c y (M H z)
S
12
(dB
)
-30
-25
-20
-15
-10
-5
0
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
11
(dB
)
-30
-25
-20
-15
-10
-5
0
1300
1500
1 700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
22
(dB
)
|
S
11
|
vs. Frequency
|
S
21
|
vs. Frequency
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
0
4
8
12
16
20
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
21
(dB
)
-30
-26
-22
-18
-14
-10
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
12
(dB
)
-30
-25
-20
-15
-10
-5
0
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
11
(dB
)
-30
-25
-20
-15
-10
-5
0
1300
1500
1 700
1900
2100
2300
2500
F re q u e n c y (M H z)
S
22
(dB
)
Typical RF Performance at V
S
= 3 V -- 1400-2500 MHz Evaluation Board -- T
LEAD
=+25
C
Typical RF Performance at V
S
= 4 V -- 1400-2500 MHz Evaluation Board -- T
LEAD
=+25
C
EDS-101502 Rev C
4
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 South Technology Court
Broomfield, CO 80021
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
1400-2500 MHz Application Circuit
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Note: Circuit board dielectric
material is GETEK,ML200C
C
B
SGL-0263
L
M1
Z1
C
D2
+V
S
L
B
Z3
C
M1
R
B1
(OPT)
B1
(OPT)
C
D1
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B2
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4
6
3
RF
INPUT
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C
B
RF
OUTPUT
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ECB-101761
RF
IN
MICRODEVICES
SIRENZA
RF
OUT
Rev B
+V
S
GND
SGL-0263
B1
C
B
R
B2
L
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C
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D2
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M1
EDS-101502 Rev C
5
Phone: (800) SMI-MMIC
http://www.sirenza.com
303 South Technology Court
Broomfield, CO 80021
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
0.026
0.075
0.016
0.035
Pad Layout
Notes:
1. Provide a ground pad area under device pins 2 & 5
with plated via holes to the PCB ground plane.
2. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
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