1
EDS-103295 Rev A
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
http://www.sirenza.com
Phone: (800) SMI-MMIC
303 South Technology Court
Broomfield, CO 80021
Preliminary
Sirenza Microdevices' SPF-2000 is a high linearity, low noise
0.25
m pHEMT. This 300
m device is ideally biased at 3V,20mA
for lowest noise performance. At 5V,40mA the device delivers
excellent output TOI of 32 dBm. It provides ideal performance
as driver stages in many commercial, industrial and military
LNA applications.
Product Description
SPF-2000
Low Noise High Linearity
pHEMT GaAs FET
0.1 - 12 GHz Operation
Product Features
15 dB Gmax at 12GHz
1.25 dB F
MIN
at 12 GHz
+32 dBm Output IP3 at 12GHz
+20 dBm Output Power at 1dB Compression
Applications
High IP3 LNA for VSAT, LMDS, Cellular Systems
and Instrumentation
Broadband Amplifiers
Typical Gain Performance
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
G
ai
n, G
m
ax
(
dB
)
3V, 20mA
5V, 40mA
Gmax
Gain
S y m b o l
D e v ic e C h a r a c te r is tic s :
T e s t C o n d itio n s ,
V d s = 3 V , Id s = 2 0 m A , T = 2 5 C
(u n le s s o th e r w is e n o te d )
T e s t
F r e q u e n c y
U n its
M in .
T y p .
M a x .
G m a x
M a xi m u m A va i la b le G a i n
[2 ]
Z
S
= Z
S
* , Z
L
= Z
L
*
1 .9 G H z
4 .0 G H z
1 2 .0 G H z
d B
d B
d B
-
2 1
1 3
2 5
2 3
1 5
-
2 5
1 7
S
2 1
In s e rti o n G a in
[2 ]
Z
S
= Z
L
= 5 0 O h m s
1 .9 G H z
d B
1 6
1 8
2 0
N F
M IN
M in i m u m N o i s e F i g u r e
Z
S
= G a m m a -o p t, Z
L
= Z
L
*
2 .0 G H z
4 .0 G H z
1 2 .0 G H z
d B
d B
d B
-
-
-
0 .5
0 .6
1 .2
-
-
-
P
1 d B
O u tp u t 1 d B C o m p re s s i o n P o i n t
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
d B m
d B m
d B m
d B m
-
-
-
-
2 0 .0
1 5 .0
2 1
1 8
-
-
-
-
G
1 d B
G a in a t 1 d B C o m p re s s i o n P o i n t
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
d B m
d B m
d B m
d B m
-
-
-
-
1 7 .7
1 7 .0
1 3 .0
1 1 .0
-
-
-
-
O IP
3
O u tp u t T h ird O rd e r In te rc e p t P o i n t
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
V
D S
= 5 V , I
D S
= 4 0 m A
V
D S
= 3 V , I
D S
= 2 0 m A
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
d B m
d B m
d B m
d B m
-
-
-
-
3 2
2 8
3 2
3 0
-
-
-
-
I
D S S
S a tu ra te d D ra i n C u rre n t
[2 ]
m A
3 0
8 5
1 4 0
V
P
P in c h o ff V o lta g e
[1 ]
V
D S
= 2 V , I
D S
= 0 .1 5 0 m A
V
-1 .5
-1 .0
-0 .5
G
M
Tra n s c o n d u c ta n c e
V
G S
= -0 .2 5 V
m S
-
1 1 2
-
B V
G S
G a te to S o u rc e B re a k d o w n V o lta g e
[1 ]
I
G S
= 0 .3 m A , d ra in o p e n
V
-
-1 7
-8
B V
G D
G a te to D ra in B re a k d o w n V o lta g e
[1 ]
I
G D
= 0 .3 m A , V
G S
= -3 .0 V
V
-
-1 7
-8
R
T H
T h e r m a l R e s is ta n c e
C /W
1 1 0
V
D S
O p e ra ti n g V o lta g e
[3 ]
D ra in - s o u rc e
V
5 .5
I
D Q
O p e ra ti n g C u rre n t
[3 ]
D ra in - s o u rc e , q u i e s c e n t
m A
5 5
P
D IS S
P o w e r D i s s ip a ti o n
[3 ]
W
0 .2
[1] 100% tested - DC parameters tested on wafer.
[2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements.
[3] V
DS
* I
DQ
< P
DISS
is recommended for continuous reliable operation.
http://www.sirenza.com
Phone: (800) SMI-MMIC
2
EDS-103295 Rev A
303 South Technology Court, Broomfield, CO 80021
SPF-2000 Low Noise High Linearity FET
Preliminary
Operation of this device beyond any one of these
parameters may cause permanent damage.
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
P
DC
- P
OUT
< (T
J
- T
L
) / R
TH
where:
P
DC
= I
DS
* V
DS
(W)
P
OUT
= RF Output Power (W)
T
J
= Junction Temperature (C)
T
L
= Lead Temperature (pin 4) (C)
R
TH
= Thermal Resistance (C/W)
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
e
u
l
a
V
t
i
n
U
n
i
a
r
D
t
n
e
r
r
u
C
I
S
D
I
S
S
D
A
m
e
t
a
G
d
r
a
w
r
o
F
t
n
e
r
r
u
C
I
F
S
G
3
.
0
A
m
t
n
e
r
r
u
C
e
t
a
G
e
s
r
e
v
e
R
I
R
S
G
3
.
0
A
m
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
e
g
a
tl
o
V
V
S
D
7
+
V
n
i
a
r
D
-
o
t
-
e
t
a
G
e
g
a
tl
o
V
V
D
G
8
-
V
e
c
r
u
o
S
-
o
t
-
e
t
a
G
e
g
a
tl
o
V
V
S
G
0
>
r
o
5
-
<
V
r
e
w
o
P
t
u
p
n
I
F
R
P
N
I
0
0
1
W
m
e
r
u
t
a
r
e
p
m
e
T
g
n
it
a
r
e
p
O
T
P
O
5
8
+
o
t
0
4
-
C
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
T
r
o
t
s
0
5
1
+
o
t
0
4
-
C
n
o
it
a
p
i
s
s
i
D
r
e
w
o
P
P
S
I
D S
0
0
6
W
m
e
r
u
t
a
r
e
p
m
e
T
l
e
n
n
a
h
C
T
J
+
0
5
1
C
Assembly Instructions:
The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to
temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond
using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be
used.
Design Data:
Complete design data including S-parameters, noise parameters, and large signal model are
available upon request by contacting applications support at baredie-apps@sirenza.com
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