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Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-104641 Rev C
Preliminary
Sirenza Microdevices' SZM-2066Z is a high linearity class AB
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic Q-FlexN multi-chip module
package. This HBT amplifier is made with InGaP on GaAs
device technology and fabricated with MOCVD for an ideal
combination of low cost and high reliability.
This product is specifically designed as a final or driver stage
for 802.16 and 802.11b/g equipment in the 2.4-2.7 GHz
bands. It can run from a 3V to 5V supply. The external output
match and bias adjustability allows load line optimization for
other applications or over narrower bands. It features an out-
put power detector, on/off power control and high RF overdrive
robustness. This product features a RoHS compliant and
Green package with matte tin finish, designated by the `Z' suf-
fix.
Key Specifications
Symbol
Parameters: Test Conditions, 2.5-2.7GHz App circuit,
Z
0
= 50
, V
CC
= 5.0V, Iq = 583mA, T
BP
= 30C
Unit
Min.
Typ.
Max.
f
O
Frequency of Operation
MHz
2500
2700
P
1dB
Output Power at 1dB Compression 2.7GHz
dBm
32.0
33.5
S
21
Small Signal Gain 2.7GHz
dB
32.2
33.7
Pout
Output power at 2.5% EVM 802.11g 54Mb/s - 2.7GHz
dBm
26.0
IM3
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz
dBc
-45
-40
NF
Noise Figure at 2.7 GHz
dB
7.7
IRL
Worst Case Input Return Loss 2.5-2.7GHz
dB
7.5
10.5
ORL
Worst Case Output Return Loss 2.5-2.7GHz
12.5
15.5
Vdet Range
Output Voltage Range for Pout=10dBm to 33dBm
V
0.9 to 1.8
I
cq
Quiescent Current (V
cc
= 5V)
mA
503
583
663
I
VPC
Power Up Control Current (V
pc
=5V, ( I
VPC1
+I
VPC2
+ I
VPC3
)
mA
4
I
leak
Vcc Leakage Current (V
cc
= 5V, V
pc
= 0V)
A
50
R
th, j-l
Thermal Resistance (junction - lead)
C/W
10
Functional Block Diagram
SZM-2066Z
2.4-2.7GHz 2W Power Amplifier
Product Features
Applications
P1dB = 33.5dBm @ 5V
Three Stages of Gain: 37dB
802.11g 54Mb/s Class AB Performance
Pout = 26dBm @ 2.5% EVM, Vcc 5V, 690mA
Active Bias with Adjustable Current
On-chip Output Power Detector
Low Thermal Resistance
Power up/down control < 1
s
802.16 WiMAX Driver or Output Stage
802.11b/g WLAN, WiFi
Product Description
6mm x 6mm QFN Package
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
RFIN
RFOUT
Power
Detector
Vbias = 5V
Power
Up/Dow n
Control
Vcc = 5V
Pb
RoHS Compliant
&
Package
Green
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-104641 Rev C
Preliminary
SZM-2066Z 2.4-2.7GHz 2W Power Amp
Absolute Maximum Ratings
Parameters
Value
Unit
VC3 Collector Bias Current (I
VC3
)
1500
mA
VC2 Collector Bias Current (I
VC2
)
500
mA
VC1 Collector Bias Current (I
VC1
)
150
mA
****Device Voltage (V
D
)
9.0
V
Power Dissipation
6
W
Operating Lead Temperature (T
L
)
-40 to +85
C
***Max CW RF output Power for 50 ohm
continuous long term operation
30
dBm
Max CW RF Input Power for 50 ohm out-
put load
26
dBm
Max CW RF Input Power for 10:1 VSWR
RF out load
5
dBm
Storage Temperature Range
-40 to +150
C
Operating Junction Temperature (T
J
)
+150
C
ESD Human Body Model
1000
V
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH'
j-l
Typical Performance with appropriate app circuit(Vcc=5V, Icq=583mA, * 802.11g 54Mb/s 64QAM)
Parameter
Units
**2.4GHz
2.5GHz
2.6GHz
2.7GHz
Gain @ Pout=26dBm
dB
37.5
36.9
36.5
34.6
P1dB
dBm
34.6
33.5
33.5
33.9
Pout @ 2.5% EVM*
dBm
27
26
26
26.5
Current @ Pout 2.5% EVM*
mA
703
710
700
712
Input Return Loss
dB
-12.1
-11.5
-10.8
-10.5
Output Return Loss
dB
-27
-15.6
-28
-18.5
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
*** With specified application circuit.
**** No RF Drive
**Measured with 2.4-2.5GHz Appication circuit. See page 11 for details.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-104641 Rev C
Preliminary
SZM-2066Z 2.4-2.7GHz 2W Power Amp
Pin Out Description
Pin #
Function
Description
7, 11,12, 22, 29, 31,
39, 40
NC
These are no connect (NC) pins and are not wired inside the package. It is recommended to con-
nect them as shown in the application circuit to achieve the stated performance.
1,10, 21, 30
GND
These pins are internally grounded inside the package to the backside ground paddle. It is recom-
mended to also ground them external to the package to achieve the specified performance.
2
VC1
This is the collector of the first stage.
3
VBIAS12
This is the supply voltage for the active bias circuit of the 1st and 2nd stages.
4-5
R1A-R2A
A resistor is tied across these pins internal to the package.
6
RFIN
This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin.
8
VPC1
Power up/down control pin for the 1st stage. An external series resistor is required for proper set-
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the
voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.
9
VPC2
Power up/down control pin for the 2nd stage. An external series resistor is required for proper set-
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the
voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.
13, 38
VC2A, VC2B
These two pins are connected internal to the package and connect to the 2nd stage collector. To
achieve specified performance, the layout of these pins should match the Recommended Land
Pattern, pg. 13.
14-15
17-18
33-34
36-37
C1A-C2A
C3A-C4A
C4B-C3B
C2B-C1B
These pins have capacitors across them internal to the package as shown in the below schematic.
They are used as tuning and RF coupling elements between the 2nd and 3rd stage.
16,35
VB3A, VB3B
These are the connections to the base of the 3rd stage output device. To achieve specified perfor-
mance, the layout of these pins should match the Recommended Land Pattern, pg. 13.
19
VPC3
Power up/down control pin for the 2nd stage. An external series resistor is required for proper set-
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the
voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA.
20
VDET
This is the output port for the power detector. It samples the power at the input of the 3rd stage.
23-28
RFOUT
These are the RF output pins and DC connections to the 3rd stage collector.
32
VBIAS3
This is the supply voltage for the active bias circuit of the 3rd stage.
Simplified Device Schematic
VBIAS12
RFOUT
R2A
RFIN
VC1
RFOUT
RFOUT
RFOUT
RFOUT
RFOUT
VPC2
VPC1
NC
R1A
NC
C4A
VP
C
3
VD
E
T
VB
I
A
S3
C4B
NC
NC
NC
NC
NC
VC
2
B
C1B
NC
VC
2
A
C1A
C2B
VB3B
C3B
C2A
VB3A
C3A
GND
GND
GND
GND
11
10
40
30
20
1
31
21
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
4
EDS-104641 Rev C
Preliminary
SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 556mA, T=25C)
EVM vs Pout T=+25c
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EVM(
%
)
2.4GHz
2.5GHz
EVM vs Pout F=2.4GHz
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EV
M
(
%)
-40c
+25c
+85c
EVM vs Pout F=2.5GHz
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EV
M
(
%)
-40c
+25c
+85c
Typical Gain vs Pout, F=2.4GHz
31
32
33
34
35
36
37
38
39
40
41
16
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
Ga
in(d
B)
-40c
+25c
+85c
Typical Gain vs Pout, F=2.5GHz
31
32
33
34
35
36
37
38
39
40
41
16
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
Ga
in(d
B)
-40c
+25c
+85c
IM3 vs Pout (2 Tone Avg.),T=+25c
Tone Spacing = 1MHz
-65
-60
-55
-50
-45
-40
-35
-30
18
20
22
24
26
28
Pout(dBm)
I
M
3(
dB
c)
2.4GHz
2.5GHz
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
5
EDS-104641 Rev C
Preliminary
SZM-2066Z 2.4-2.7GHz 2W Power Amp
Measured 2.4-2.5 GHz Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 556mA, T=25C)
Narrow band S11 - Input Return Loss
-30
-25
-20
-15
-10
-5
0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
S1
1(
dB
)
-40C
+25C
+85C
Narrow band S21 - Forw ard Gain
26
28
30
32
34
36
38
40
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
S2
1(
dB
)
-40C
+25C
+85C
DC Supply Current vs Pout, T=+25C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Idc
(
A
)
2.4GHz
2.5GHz
DC Supply Current vs Pout, F=2.4GHz
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Idc
(
A
)
-40c
+25c
+85c
Narrow band S12 - Reverse Isolation
-75
-70
-65
-60
-55
-50
-45
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
S1
2(
dB
)
-40C
+25C
+85C
Narrow band S22 - Output Return Loss
-35
-30
-25
-20
-15
-10
-5
0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency(GHz)
S2
2(
dB
)
-40C
+25C
+85C
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