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Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-104666 Rev D
Preliminary
Sirenza Microdevices' SZP-3026Z is a high linearity single
stage class AB Heterojunction Bipolar Transistor (HBT)
amplifier housed in a proprietary surface-mountable plastic
encapsulated package. This HBT amplifier is made with
InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reli-
ability.
This product is specifically designed as a flexible final or
driver stage for 802.16 equipment in the 3.0-3.8GHz bands.
It can run from a 3V to 6V supply. It is prematched to ~5
ohms on the input for broadband performance and ease of
matching at the board level. It features an output power
detector, on/off power control, ESD protection, excellent
overall robustness and a proprietary hand reworkable and
thermally enhanced SOF-26 package. This product fea-
tures a RoHS Compliant and Green package with matte tin
finish, designated by the `Z' suffix.
Key Specifications
Symbol
Parameters: Test Conditions, 3.4-3.6GHz, 5V App circuit,
Z
0
= 50
, V
CC
= 5.0V, Iq = 385mA, T
BP
= 30C
Unit
Min.
Typ.
Max.
f
O
Frequency of Operation
MHz
3000
3800
P
1dB
Output Power at 1dB Compression 3.5GHz
dBm
31.7
33.2
S
21
Small Signal Gain 3.5GHz
dB
10.5
12.0
Pout
Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz
dBm
26.0
IM3
Third Order Suppression (Pout=23dBm per tone) - 3.5GHz
dBc
-43
-40
NF
Noise Figure at 3.5GHz
dB
5.1
IRL
Worst Case Input Return Loss 3.4-3.6GHz
dB
14
18
ORL
Worst Case Output Return Loss 3.4-3.6GHz
7
10
Vdet Range
Output Voltage Range for Pout=10dBm to 33dBm
V
0.9 to 2.2
I
cq
Quiescent Current (V
cc
= 5V)
mA
347
385
424
I
VPC
Power Up Control Current (V
pc
=5V)
mA
2.3
I
leak
Vcc Leakage Current (V
cc
= 5V, V
pc
= 0V)
A
10
R
th, j-l
Thermal Resistance (junction - lead)
C/W
12
Functional Block Diagram
SZP-3026Z
3.0-3.8GHz 2W InGaP Amplifier
Product Features
Applications
P1dB = 33.6dBm @ 5V
802.11g 54Mb/s Class AB Performance
Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA
Pout = 27dBm @ 2.5% EVM, Vcc 6V, 513mA
On-chip Output Power Detector
Input Prematched to ~5 ohms
Proprietary Low Thermal Resistance Package
Hand Solderable and Easy Rework
Power up/down control < 1
s
802.16 WiMAX Driver or Output Stage
WLL
Product Description
Proprietary SOF-26 Package
Active
Bias
RFIN
RFOUT
Power
Detector
Vbias = 5V
Power
Up/Dow n
Control
Vcc = 5V
SZP-3026
Pb
RoHS Compliant
&
Package
Green
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-104666 Rev D
Preliminary
SZP-3026Z 3.0-3.8GHz 2W Power Amp
Absolute Maximum Ratings
Parameters
Value
Unit
VC1 Collector Bias Current (I
VC1
)
1500
mA
**Device Voltage (V
cc
)
7.0
V
Power Dissipation
6
W
Operating Lead Temperature (T
L
)
-40 to +85
C
*Max RF output Power for 50 ohm contin-
uous long term operation
30
dBm
Max RF Input Power for 50 ohm output
load
27
dBm
Max RF Input Power for 10:1 VSWR out-
put load
23
dBm
Storage Temperature Range
-40 to +150
C
Operating Junction Temperature (T
J
)
+150
C
ESD Human Body Model
1000
V
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH'
j-l
Typical 5V Performance with Appropriate App Circuit (Vcc=5V, Icq=385mA, * 802.11g 54Mb/s)
Parameter
Units
3.0GHz
3.3GHz
3.4GHz
3.5GHz
3.6GHz
3.7GHz
3.8GHz
Gain@Pout=26dBm
dB
12.4
12.4
12.4
12.2
12.0
11.5
11.0
P1dB
dBm
33.9
33.9
33.6
33.2
32.9
32.6
32.1
Pout @ 2.5% EVM*
dBm
26.5
26.5
26.5
26.2
25.5
25.5
25
Current @ Pout 2.5% EVM*
mA
590
580
580
570
560
560
550
Input Return Loss
dB
21.8
21.8
20.6
19.6
18.3
15.9
15.9
Output Return Loss
dB
9.0
9.0
10.0
11.2
11.7
10.3
10.3
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Pin Out Description
Pin #
Function
Description
1
VBIAS
This is the supply voltage for the active bias circuit.
2
RFIN
This is the RF input pin and has a DC voltage present. An external DC block is required.
3
VPC
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by
more than 0.5V unless the supply current from pin 3 is limited < 10mA.
4
VDET
This is the output port for the power detector. It samples the power at the input of the amplifier.
5
RFOUT/VCC
This is the RF output pin and DC connection to the collector.
6
NC
This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to
achieve the specified performance.
GND GND
These pins are DC connected to the backside paddle. They provide goos thermal connection to the
backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recom-
mended as shown in the landing pattern.
Simplified Device Schematic
1
2
3
6
5
4
VBIAS
RFIN
VPC
VDET
RFOUT/VCC
NC
Bias
GND
GND
* With specified application circuit.
** No RF Drive
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-104666 Rev D
Preliminary
SZP-3026Z 3.0-3.8GHz 2W Power Amp
Measured 3.4-3.6 GHz, 5V Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 385mA, T=25C)
Source EVM = 0.6%, not deembedded from data.
Typical Gain vs Pout, F=3.4GHz
8
9
10
11
12
13
14
16
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
Ga
in(dB)
-40c
+25c
+85c
EVM vs Pout T=+25c
802.11g, OFDM 54Mb/S, 64QAM
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EVM(%)
3.4GHz
3.5GHz
3.6GHz
3.7GHz
EVM vs Pout F=3.4GHz
802.11g, OFDM 54Mb/S, 64QAM
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EVM(%)
-40c
+25c
+85c
EVM vs Pout F=3.6GHz
802.11g, OFDM 54Mb/S, 64QAM
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EVM(%)
-40c
+25c
+85c
EVM vs Pout F=3.7GHz
802.11g, OFDM 54Mb/S, 64QAM
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
28
30
Pout(dBm)
EVM(%)
-40c
+25c
+85c
IM3 vs Pout (2 Tone Avg.),T=+25c
Tone Spacing = 1MHz
-65
-60
-55
-50
-45
-40
-35
18
20
22
24
26
28
Pout(dBm)
IM3(d
B
c
)
3.4GHz
3.5GHz
3.6GHz
3.7GHz
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
4
EDS-104666 Rev D
Preliminary
SZP-3026Z 3.0-3.8GHz 2W Power Amp
Measured 3.4-3.6 GHz, 5V Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 385mA, T=25C)
Typical Gain vs Pout, F=3.6GHz
8
9
10
11
12
13
14
16
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
Gain
(d
B)
-40c
+25c
+85c
Typical Gain vs Pout, F=3.7GHz
8
9
10
11
12
13
14
16
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
Gain
(d
B)
-40c
+25c
+85c
Narrowband S11 - Input Return Loss
-30
-25
-20
-15
-10
-5
0
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency(GHz)
S
1
1
(dB)
-40C
+25C
+85C
Narrowband S12 - Reverse Isolation
-32
-30
-28
-26
-24
-22
-20
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency(GHz)
S
1
2
(dB)
-40C
+25C
+85C
Narrowband S21 - Forward Gain
5
6
7
8
9
10
11
12
13
14
15
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency(GHz)
S21(
d
B
)
-40C
+25C
+85C
Narrowband S22 - Output Return Loss
-25
-20
-15
-10
-5
0
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency(GHz)
S22(
d
B
)
-40C
+25C
+85C
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
5
EDS-104666 Rev D
Preliminary
SZP-3026Z 3.0-3.8GHz 2W Power Amp
Measured 3.4-3.6 GHz, 5V Application Circuit Data (V
cc
= V
pc
= 5.0V, I
q
= 385mA, T=25C)
Noise Figure vs Frequency, O.T.
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
3.3
3.4
3.5
3.6
3.7
3.8
Frequency(GHz)
NF(dB)
-40c
+25c
+85c
DC Supply Current vs Pout, T=+25C
0.3
0.5
0.7
0.9
1.1
1.3
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Idc
(
A)
3.4GHz
3.5GHz
3.6GHz
3.7GHz
DC Supply Current vs Pout, F=3.5GHz
0.3
0.5
0.7
0.9
1.1
1.3
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Idc
(
A)
-40c
+25c
+85c
RF Power Detector (Vdet) vs Pout, F=3.4GHz
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Vde
t(V)
-40c
+25c
+85c
RF Power Detector (Vdet) vs Pout, F=3.6GHz
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Vde
t(V)
-40c
+25c
+85c
RF Power Detector (Vdet) vs Pout, F=3.7GHz
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
16
18
20
22
24
26
28
30
32
34
Pout(dBm)
Vde
t(V)
-40c
+25c
+85c
```
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