1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-102934 Rev C
Sirenza Microdevices' XD010-12S-D4F 15W power module is a robust 2-
stage Class A/AB amplifier module for use in the driver stages of cellular
base station power amplifiers. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,
solution for high power applications requiring high efficiency, excellent linear-
ity, and unit-to-unit repeatability. This unit operates from a single voltage sup-
ply and has internal temperature compensation of the bias voltage to ensure
stable performance over the full temperature range. It is internally matched
to 50 ohms.
Key Specifications
Symbol
Parameter
Unit
Min.
Typ.
Max.
Frequency
Frequency of Operation
MHz
869
-
894
P
1dB
Output Power at 1dB Compression, 880MHz
W
12
15
-
Gain
Gain at 1W Output Power, 880MHz
dB
30
32
-
Gain Flatness
Peak to Peak Gain Variation, 869 - 894MHz
dB
-
0.2
1.0
IRL
Input Return Loss 1W Output Power, 869 - 894MHz
dB
14
17
-
Efficiency
Drain Efficiency at 12W CW, 880MHz
%
27
33
-
Drain Efficiency at 2W CDMA (Single Carrier IS-95)
%
-
12
-
Drain Efficiency at 1W CDMA (Single Carrier IS-95)
%
-
7
-
Linearity
ACPR at 2W CDMA (Single Carrier IS-95, 9 Ch Fwd, Off-
set=750KHz, ACPR Integrated Bandwidth), 880MHz
dB
-
-51
-
ALT-1 at 2W CDMA (Single Carrier IS-95, 9 Ch Fwd,
Offset=1980KHz, ACPR Integrated Bandwidth), 880MHz
dB
-
-70
-
3
rd
Order IMD at 12W PEP (Two Tone), 880MHz
dBc
-
-36
-32
3
rd
Order IMD at 1W PEP (Two Tone), 880MHz
dBc
-
-45
-
Delay
Signal Delay from Pin 1 to Pin 4
nS
-
2.5
-
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
-
0.5
-
R
TH, j-l
Thermal Resistance Stage 1 (Junction to Case)
C/W
-
11
-
R
TH, j-2
Thermal Resistance Stage 2 (Junction to Case)
C/W
-
4
-
XD010-12S-D4F
869-894 MHz Class AB
15W Power Amplifier Module
Product Features
Applications
50 W RF impedance
15W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 32 dB at 880 MHz
Robust 8000V ESD (HBM), Class 3B
XeMOS II LDMOS FETS
Temperature Compensation
Base Station PA driver
Repeater
CDMA / WCDMA
GSM / EDGE
Product Description
Test Conditions Z
in
= Z
out
= 50
, V
D
= 28.0V, I
DQ1
= 230 mA, I
DQ2
=150mA, T
Flange
= 25C
Bias
Network
Temperature
Compensation
V
D2
D1
V
RF out
RF in
Stage 2
Stage 1
1
2
3
4
Case Flange = Ground
Functional Block Diagram
XD010-12S-D4F 869-894 MHz 15W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
2
EDS-102934 Rev C
Simplified Device Schematic
Absolute Maximum Ratings
Parameters
Value
Unit
1
st
Stage Bias Voltage (V
D1
)
35
V
2
nd
Stage Bias Voltage (V
D2
)
35
V
RF Input Power
+20
dBm
Load Impedance for Continuous Operation
Without Damage
5:1
VSWR
Output Device Channel Temperature
+200
C
Operating Temperature Range
-20 to +90
C
Storage Temperature Range
-40 to +100
C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation see typical
setup values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
D1
V
V
D2
Temperature
Compensation
RF
in
1
Q1
Bias
Network
Q2
2
3
4
RF
out
Case Flange = Ground
Pin Description
Pin #
Function
Description
1
RF Input
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
2
V
D1
This is the drain voltage for the first stage. Nominally +28Vdc
3
V
D2
This is the drain voltage for the 2
nd
stage of the amplifier module. The 2
nd
stage gate bias is temperature compensated to
maintain constant quiscent drain current over the operating temperature range. See Note 1.
4
RF Output
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
Flange
Gnd
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for
optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza's web site.
Note 1:
The internally generated gate voltage is thermally compen-
sated to maintain constant quiescent current over the temper-
ature range listed in the data sheet. No compensation is
provided for gain changes with temperature. This can only be
accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to
an adjacent PCB. The maximum soldering iron tip tempera-
ture should not exceed 700 C, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN060 (www.sirenza.com) for fur-
ther installation
instructions.
Quality Specifications
Parameter
Unit
Typical
ESD Rating
Human Body Model, JEDEC Document - JESD22-A114-B
V
8000
MTTF
85
o
C Leadframe, 200
o
C Channel
Hours
1.2 X 10
6
XD010-12S-D4F 869-894 MHz 15W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
3
EDS-102934 Rev C
Output Power, Gain, Efficiency vs. Input Power
Freq=881 MHz, Vdd=28 V, T
Flange
=25
o
C
0
5
10
15
20
25
30
35
40
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
Input Power (W)
Output Pow
e
r (W), Gain (dB), Efficiency (%)
Output Power
Gain
Efficiency
Typical Performance Curves
Gain, Efficiency, ACP, ALT1 vs. Output Power
Freq=881 MHz, Vdd=28 V, T
Flange
=25
o
C
IS95 standard, channel BW= 1.23 MHz.
ADJ BW= 30 KHz @ 750 KHz spacing.
ALT1 BW= 30 KHz @ 1980 KHz spacing.
0
5
10
15
20
25
30
35
0
0.5
1
1.5
2
2.5
3
3.5
4
Output Power (W)
G
a
i
n
(
d
B)
,
Ef
f
i
c
i
e
n
c
y
(
%
)
-80
-70
-60
-50
-40
-30
-20
-10
AC
P
(
d
B)
,
AL
T
1
(
d
B
)
Gain
Efficiency
ACP
ALT1
Gain, ACP vs. Output Power over Temperature
Freq=881 MHz, Vdd=28 V, T
Flange
=-20
o
C, 25
o
C, 90
o
C
IS95 standard, channel BW= 1.23 MHz. ADJ BW= 30 KHz @
750 KHz spacing. ALT1 BW= 30 KHz @ 1980 KHz spacing.
10
15
20
25
30
35
0
0.5
1
1.5
2
2.5
3
3.5
4
Output Power (W)
Ga
i
n
(
d
B
)
-70
-60
-50
-40
-30
-20
AC
P
(
d
B)
Gain @ -20
Gain @ 25
Gain @ 90
ACP @ -20
ACP @ 25
ACP @ 90
Gain, Efficiency, IRL, ACP, ALT1 vs. Frequency
Output Power= 1 Watt Vdd=28 V, T
Flange
=25
o
C
IS95 standard, channel BW= 1.23 MHz. ADJ BW= 30 KHz @
750 KHz spacing. ALT1 BW= 30 KHz @ 1980 KHz spacing.
0
5
10
15
20
25
30
35
865
870
875
880
885
890
895
900
Frequency (MHz)
G
a
i
n
(
d
B
)
, E
f
fi
c
i
en
c
y
(
%
)
-80
-70
-60
-50
-40
-30
-20
-10
I
R
L
(
d
B
)
,
AC
P
(
d
B
)
,
AL
T
1
(
d
B)
Gain
Efficiency
IRL
ACP
ALT1
XD010-12S-D4F 869-894 MHz 15W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
4
EDS-102934 Rev C
Gain, Efficiency vs. Output Power over Temperature
Freq=881 MHz, Vdd=28 V, T
Flange
=-20
o
C, 25
o
C, 90
o
C
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
Output Power (W)
Ga
in
(
d
B)
,Effic
i
e
n
c
y
(
%
)
Gain, Temp= -20
Gain, Temp= 25
Gain, Temp= 90
Efficiency, Temp= -20
Efficiency, Temp= 25
Efficiency, Temp= 90
Typical Performance Curves (cont'd)
Gain, Efficiency, IRL vs. Frequency
Output Power=1 Watt, Vdd=28 V, T
Flange
=25
o
C
0
5
10
15
20
25
30
35
865
870
875
880
885
890
895
900
Frequency (MHz)
G
a
i
n
(
d
B)
,
Ef
f
i
c
i
e
n
c
y
(
%
)
-20
-19
-18
-17
-16
-15
-14
-13
IR
L (
d
B
)
Gain
Efficiency
IRL
XD010-12S-D4F 869-894 MHz 15W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
5
EDS-102934 Rev C
Test Board Schematic with module connections shown
Test Board Layout
To receive Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture, contact applications
support at
support@sirenza.com.
Data sheet for evaluation circuit (XD010-EVAL) available from Sirenza website.
Component
Description
Manufacturer
PCB
Rogers 4350, e
r
=3.5
Thickness=30mils
Rogers
J1, J2
SMA, RF, Panel Mount Tab W /
Flange
Johnson
J3
MTA Post Header, 6 Pin, Rect-
angle, Polarized, Surface
Mount
AMP
C1, C10
Cap, 10mF, 35V, 10%, Tant,
Elect, D
Kemet
C2, C20
Cap, 0.1mF, 100V, 10%, 1206
Johanson
C3, C30
Cap, 1000pF, 100V, 10%, 1206
Johanson
C25, C26
Cap, 68pF, 250V, 5%, 0603
ATC
C21, C22
Cap, 0.1mF, 100V, 10%, 0805
Panasonic
C23, C24
Cap, 1000pF, 100V, 10%, 0603
AVX
Mounting
Screws
4-40 X 0.250"
Various
Test Board Bill of Materials
PDF 
ZIP