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Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102936 Rev B

Prelimi nary

The XD010-14S-D4F 10W power module is a

2-stage Class A/AB amplifier module for use in

the driver stages of GSM and EDGE RF power

amplifiers. The matching structures are

designed to minimize the EVM at typical oper-

ating levels. This unit operates from a single

voltage and has internal temperature compen-

sation of the bias voltage to ensure stable per-

formance over the full temperature range.

Key Specifications

Parameter

Description: Test Conditions

= Z

out

= 50

, V

= 28.0V, I

DD1

= 230mA,

DD2

= 158mA, T

Flange

= 25ºC

Unit

Min.

Typ.

Max.

Frequency

Frequency of Operation

MHz

925

960

1dB

Output Power at 1dB Compression (single tone)

Gain

Gain at 6W Output Power (CW)

Gain Flatness

Peak to Peak Gain Variation

0.4

IRL

Input Return Loss 6W CW

Efficiency

Drain Efficiency at 12W CW

Linearity

RMS EVM at 8W EDGE output

2.5

Peak EVM at 8W EDGE output

6.7

Order IMD at 12W PEP (Two Tone)

dBc

-35

Delay

Signal Delay from Pin 1 to Pin 4

2.5

Phase Linearity

Deviation from Linear Phase (Peak to Peak)

Deg

0.5

TH, j-l

Thermal Resistance Stage 1 (Junction to Case)

ºC/W

TH, j-2

Thermal Resistance Stage 2 (Junction to Case)

ºC/W

Functional Block Diagram

XD010-14S-D4F

925-960 MHz Class A/AB
10W Power Amplifier Module

Product Features

Applications

50 W RF impedance

15W Output P

1dB

Single Voltage Operation

High Gain: 32 dB Typical

High Peak Power for Lower BER

Advanced, XeMOS II LDMOS FETS

Ultra-low EVM

Base Station PA driver

Repeater

GSM / EDGE

Product Description

Temperature
Compensation

28 V

Case Flange = Ground

RF in

28 V

RF out

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102936 Rev B

Preliminary

XD010-14S-D4F 925-960 MHz 10W Amp

Pin Out Description

Pin #

Function

Description

RF Input

Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.

Care must be taken to protect against video transients that may damage the active devices.

DD1

This is the bias feed for the 1

stage of the amplifier module.

DD2

This is the bias feed for the 2

stage of the amplifier module. The gate bias is temperature compensated to

maintain constant current over the operating temperature range. See Note 1.

RF Output

Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.

Care must be taken to protect against video transients that may damage the active devices.

Flange

Gnd

Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the

board for optimum thermal and RF performance. See mounting instructions for recommendation.

Simplified Device Schematic

Absolute Maximum Ratings

Parameters

Value

Unit

Stage Bias Voltage (V

DD1

)

Stage Bias Voltage (V

DD2

)

RF Input Power

+20

dBm

Load Impedance for Continuous Operation

Without Damage

5:1

VSWR

Output Device Channel Temperature

+200

ºC

Lead Temperature During Solder Reflow

+210

ºC

Operating Temperature Range

-20 to +90

ºC

Storage Temperature Range

-40 to +100

ºC

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation see

typical setup values specified in the table on page one.

Caution: ESD Sensitive

Appropriate precaution in handling, packaging
and testing devices must be observed.

Note 1:

The internal generated gate voltage is ther-
mally compensated to maintain constant qui-
escent current over the temperature range
listed in the data sheet. No compensation is
provided for gain changes with temperature.
This can only be provided with AGC external
to the module.

Note 2:

Internal RF decoupling is included on all bias
leads. No additional bypass elements are
required, however some applications may
require energy storage on the drain leads to
accommodate time-varying waveforms.

Bias Network

RF
in

Case Flange = Ground

Temperature
Compensation

out

Vdd1

Vdd2

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102936 Rev B

Preliminary

XD010-14S-D4F 925-960 MHz 10W Amp

Gain, Efficiency, EVM vs. Frequency

Output Power= 8 W EDGE, Vdd=28 V

Flange

=25°C

920

925

930

935

940

945

950

955

960

965

Output Power (W)

i
n

B), Effi

cy (%

), EVM

(%)

-35

-30

-25

-20

-15

-10

-5

I
nput

Ret

rn Loss (dB)

Gain

Efficiency

EVM
Input Return Loss

EVM and Id vs. Output Power and Temperature

Freq=950 MHz EDGE, Vdd=28 V, T

Flange

=-20°C, 25°C, 90°C

Output Power (W)

EVM (%)

0.2

0.4

0.6

0.8

1.2

1.4

(Amp

EVM @-20°C
EVM @ 25°C
EVM @ 90°C
Id @ -20°C
Id @ 25°C
Id @ 90°C

Gain and Efficiency vs. Output Power and Temperature

Freq=950 MHz EDGE, Vdd=28 V, T

Flange

=-20°C, 25°C, 90°C

Output Power (W)

Gain (dB), E

fficiency (%)

Gain @ -20°C
Gain @25°C
Gain @ 90°C
Efficiency @ -20°C
Efficiency @ 25°C
Efficiency @ 90°C

Gain and EVM vs. Output Power and Voltage

Freq=942 MHz EDGE, Vdd=24V, 28V, 32V T

Flange

= 25°C

Output Power (W)

Gai

(dB), EVM (%)

Gain @ 24 VDC

Gain @ 28 VDC

Gain @ 32 VDC

EVM @ 24 VDC

EVM @ 28 VDC

EVM @ 32 VDC

Gain, Efficiency, EVM vs. Output Power

Freq=950 MHz, Vdd=28 V, T

Flange

=25°C EDGE

Output Power (W)

i
n

B), Effi

cy (%

)

RMS EVM (%)

Gain
Efficiency
EVM

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102936 Rev B

Preliminary

XD010-14S-D4F 925-960 MHz 10W Amp

Test Board Schematic with module attachments shown

Test Board Layout and Bill of Materials

Component

Description

Manufacturer

PCB

Rogers 4350, e

=3.5

Thickness=30mils

Rogers

J1, J2

SMA, RF, Panel Mount

Tab W / Flange

AMP

J3, J4

MTA Post Header, 5 Pin,

Rectangle, Polarized,

Surface Mount

AMP

C1, C2

Cap, 220mF 50V, -40 to

C, Electrolytic, G

Panasonic

C4, C6

Cap, 0.01mF, 100V, 10%,

1206

Johanson

C3, C5

Cap, 1000pF, 100V, 10%,

1206

Johanson

JP1 Header

SMT Header, Low Profile,

2mm

Specialty

Electronics

JP1 Shunt

Shunt, Mate to Header,

2mm

Specialty

Electronics

Mounting

Screws

4-40 X 0.250"

Various

To download Gerber files, DXF drawings, a detailed BOM, and
assembly recommendations for the test board with fixture

click here

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