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Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102938 Rev B

Prelimi nary

The XD010-42S-D4F 10W power module is a 2-
stage Class A amplifier module for use in the driver
stages of linear RF power amplifiers of cellular base
stations. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process.
This unit operates from a single voltage and has
internal temperature compensation of the bias volt-
age to ensure stable performance over the full tem-
perature range.

Key Specifications

Parameter

Description: Test Conditions

= Z

out

= 50

, V

= 28.0V, I

DD1

= 230mA,

DD2

= 700mA, T

Flange

= 25ºC

Unit

Min.

Typ.

Max.

Frequency

Frequency of Operation

MHz

869

894

1dB

Output Power at 1dB Compression, 880 MHz

Gain

Gain at 1W Output Power

Gain Flatness

Over Frequency at 1W Output (CW)

0.4

IRL

Input Return Loss at 1W Output (CW) (50

Ref)

Efficiency

Drain Efficiency at 8W CW Output

Drain Efficiency at 1W CDMA (Single Carrier IS-95)

3.5

Linearity

ACPR at 1W CDMA Output (Single Carrier IS-95)

-50

ALT-1 PR at 1W CDMA (Single Carrier IS-95)

-75

Order IMD at 8W PEP (Two Tone 1MHz Spacing)

dBc

-30

Order IMD at 1W PEP (Two Tone 1MHz Spacing)

dBc

-50

Delay

Signal Delay from Pin 1 to Pin 4

3.9

Phase Linearity

Deviation from Linear Phase (Peak to Peak)

Deg

0.5

TH, j-l

Thermal Resistance Stage 1 (Junction to Case)

ºC/W

TH, j-2

Thermal Resistance Stage 2 (Junction to Case)

ºC/W

Functional Block Diagram

XD010-42S-D4F

869-894 MHz Class A
10W Power Amplifier Module

Product Features

Applications

50 W RF impedance

8W Output P

1dB

Typical

Single Voltage Operation

High Gain: 30 dB Typical

Advanced, XeMOS II LDMOS FETS

Temperature Compensation

Base Station PA driver

Repeater

CDMA

GSM / EDGE

Product Description

S tage 2

Tem perature
C om pensation

28 V

D C

C ase Flange = G round

R F in

28 V

S tage 1

D C

R F out

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102938 Rev B

Preliminary

XD010-42S-D4F 869-894 MHz 10W Amp

Pin Out Description

Pin #

Function

Description

RF Input

Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.

Care must be taken to protect against video transients that may damage the active devices.

DD1

This is the bias feed for the 1

stage of the amplifier module.

DD2

This is the bias feed for the 2

stage of the amplifier module. The gate bias is temperature compensated to

maintain constant current over the operating temperature range. See Note 1.

RF Output

Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.

Care must be taken to protect against video transients that may damage the active devices.

Flange

Gnd

Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the

board for optimum thermal and RF performance. See mounting instructions for recommendation.

Simplified Device Schematic

Absolute Maximum Ratings

Parameters

Value

Unit

Stage Bias Voltage (V

DD1

)

Stage Bias Voltage (V

DD2

)

RF Input Power

+20

dBm

Load Impedance for Continuous Operation

Without Damage

5:1

VSWR

Base Plate Temperature: Operating with no

RF present

ºC

Output Device Channel Temperature

+200

ºC

Lead Temperature During Solder Reflow

+210

ºC

Operating Temperature Range

-20 to +90

ºC

Storage Temperature Range

-40 to +100

ºC

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation see

typical setup values specified in the table on page one.

Caution: ESD Sensitive

Appropriate precaution in handling, packaging
and testing devices must be observed.

Note 1:

The internal generated gate voltage is ther-
mally compensated to maintain constant qui-
escent current over the temperature range
listed in the data sheet. No compensation is
provided for gain changes with temperature.
This can only be provided with AGC external
to the module.

Note 2:

Internal RF decoupling is included on all bias
leads. No additional bypass elements are
required, however some applications may
require energy storage on the drain leads to
accommodate time-varying waveforms.

Bias Network

RF
in

Case Flange = Ground

Temperature
Compensation

Vdd1

Vdd2

out

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102938 Rev B

Preliminary

XD010-42S-D4F 869-894 MHz 10W Amp

Gain, IMD, ACP, ALT1 vs. Output Power Freq=881 MHz,

Vdd=28V, T

Flange

=25

C, IS-95 ADJ BW=30KHz @ 750 KHz

ALT1 BW=30KHz @1980 KHz, IMD @ 1 MHz spacing

Output Power (W)

Gain (dB)

-80

-70

-60

-50

-40

-30

-20

-10

P(dB),

ALT

1(dB),

I
M

(dBc

)

Two Tone Gain

IMD 1MHz Spacing

ACP
ALT1

Two Tone IMD, ACP, ALT1 vs. Frequency

Output Power=1 Watt, Vdd=28 V, T

Flange

=25

IS95 ADJ BW= 30 KHz@ 750 KHz

ALT1 BW= 30 KHz@1980 KHz, IMD @1 MHz spacing.

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

865

870

875

880

885

890

895

900

Frequency (MHz)

(dB),

ALT

1
(dB),

(dBc

)

Two Tone IMD
ACP
ALT1

Gain and IMD vs. Output Power and Temperature
Freq=881 MHz, Vdd=28 V, T

Flange

=-20

C, 25

C, 90

Output Power (W)

Gain (dB)

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

IMD (d

c
)

Gain @-20°C
Gain @ 25°C
Gain @ 90°C
IMD @-20°C
IMD @ 25°C
IMD @ 90°C

Gain and IMDs vs. Output Power and Voltage

Freq=881 and 882 MHz, Vdd=24 V, 28 V, 32 V

Flange

=25

Output Power (W)

Gain (dB)

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

IMD (d

c
)

Gain @ 24 Volts
Gain @ 28 Volts
Gain @ 32 Volts
IMD @ 24 Volts
IMD @ 28 Volts
IMD @ 32 Volts

Gain and Input Return Loss vs. Frequency
Output Power=1 Watt, Vdd=28 V, T

Flange

=25

865

870

875

880

885

890

895

900

Frequency (MHz)

Gain (dB)

-24

-23

-22

-21

-20

-19

-18

-17

-16

-15

-14

I
nput

e
t
u
rn Los

s
(dB)

Gain
Input Return Loss

Efficiency and Idd vs. Output Power and Temperature

Freq=881 MHz, Vdd=28 V, T

Flange

=-20

C, 25

C, 90

Output Power (W)

ffi

e
n
cy (

)

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

d
(

Efficiency @-20°C

Efficiency @25°C

Efficiency @90°C

Id @-20°C

Id @ 25°C

Id @ 90°C

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102938 Rev B

Preliminary

XD010-42S-D4F 869-894 MHz 10W Amp

Test Board Schematic with module attachments shown

Test Board Layout and Bill of Materials

Component

Description

Manufacturer

PCB

Rogers 4350, e

=3.5

Thickness=30mils

Rogers

J1, J2

SMA, RF, Panel Mount

Tab W / Flange

AMP

J3, J4

MTA Post Header, 5 Pin,

Rectangle, Polarized,

Surface Mount

AMP

C1, C2

Cap, 220mF 50V, -40 to

C, Electrolytic, G

Panasonic

C4, C6

Cap, 0.01mF, 100V, 10%,

1206

Johanson

C3, C5

Cap, 1000pF, 100V, 10%,

1206

Johanson

JP1 Header

SMT Header, Low Profile,

2mm

Specialty

Electronics

JP1 Shunt

Shunt, Mate to Header,

2mm

Specialty

Electronics

Mounting

Screws

4-40 X 0.250"

Various

To download Gerber files, DXF drawings, a detailed BOM, and
assembly recommendations for the test board with fixture

click here

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