Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 2/02A
3 V InGaP HBT Power Amplifier
Features
Single Supply, 3.2 V Nominal
Operating Voltage
Output Power Greater Than 35 dBm
High Power Added Efficiency of 55%
Ultra Small, Thermally Enhanced Micro
Leadframe Package
Low Current Standby Mode: < 10
A
Integral Analog Power Control With
70 dB of Dynamic Range
GPRS Class 12 Capable
Designed to Work With AP132-317 as
a Dual-/Tri-Band Solution
-317
AP131-317
Description
The AP131-317 is a high performance IC power amplifier
designed for use as the final amplification stage in GSM
and GPRS mobile phones, and other digital wireless
applications in the 800950 MHz band. It features 3-cell
battery operation, integrated analog power control with over
70 dB of dynamic range, and exceptional power added
efficiency over the full battery voltage range. The amplifier
is manufactured on an advanced InGaP HBT process,
known industry-wide for its excellent reliability and
performance.The AP131-317 is designed to be stable over
a wide temperature range of -40 to +85C and over a
10:1 output VSWR load. Output matching is provided
externally to maximize performance, reduce costs, and allow
optimal matching for output power and efficiency over a
broader frequency range. A dual- and/or tri-band solution
can be obtained by combining the AP131-317 with
Alpha's AP132-317. The AP131-317 is packaged in a
thermally enhanced, ultra small micro leadframe package.
SEATING PLANE
12 MAX.
0.058
(1.47mm)
PIN
INDICATOR
0.058
(1.47 mm)
0.079
(2.00 mm)
0.025 (0.65 mm)
+ 0.004 (0.10 mm)
0.001 (0.025 mm)
+ 0.001 (0.025 mm)
0.039
(1.00 mm) MAX.
2
0.148
(3.75 mm)
BSC
0.157
(4.00 mm)
BSC
0.157
(4.00 mm) BSC
0.148
(3.75 mm)
BSC
1
16 1
2
0.062
(0.16 mm)
0.079
(2.00 mm)
0.031
(0.80 mm)
BSC
0.024
(0.60 mm)
REF.
0.124
(0.32 mm)
Preliminary
Characteristic
Value
Supply Voltage
6 V Max.
V
CC
, Standby Mode, V
APC
< 0.3
Power Control Voltage
4 V Max.
Input Power
15 dBm Max.
Operating Case Temperature
-40 to +85C
Storage Temperature
-45 to +120C
Absolute Maximum Ratings
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply Voltage
2.7
3.2
4.2
V
Leakage Current
P
IN
< -30 dBm, V
APC1,2
= 0.1 V
10
A
Power Control Voltage
0.1
2.6
V
Power Control Current
5
mA
DC Specifications
3 V InGaP HBT Power Amplifier
AP131-317
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 2/02A
Parameter
Condition
Min.
Typ.
Max.
Unit
Frequency
880
915
MHz
Output Power
V
APC1,2
= 2.6 V, V
CC
= 3.2 V, CW
34.0
35.2
dBm
V
APC1,2
= 2.6 V, V
CC
= 3.5 V, CW
35.0
36.0
dBm
V
APC1,2
= 2.6 V, V
CC
= 2.7 V,
33.8
34.5
dBm
T = -40 to +85C
Dynamic Range
V
APC
= 0.1 to 2.6 V
60
dB
Power Control Slope
V
APC
= 0.1 to 2.6 V
75
180
dB/V
APC
Power Added Efficiency
P
OUT
= 34 dBm
50
55
%
Input Power
3
6
10
dBm
Input VSWR
P
OUT
= 535 dBm
1.5:1
2:1
Forward Isolation
P
IN
= 6 dBm, V
APC
= 0.1 V
-50
dBm
P
IN
= 8 dBm, V
APC
= 0.1 V
-40
dBm
Second Harmonic
At P
OUT
Max., V
CC
= 3.2 V
-55
-45
dBc
Third Harmonic
At P
OUT
Max., V
CC
= 3.2 V
-66
-50
dBc
All Others Non-harmonic Spurious
-40
dBm
Noise in the R
X
Band
925 MHz, 100 KHz BW
-72
dBm
935 MHz, 100 KHz BW
-84
dBm
18051880 MHz, 100 KHz BW
-76
dBm
19301990 MHz, 100 KHz BW
-76
dBm
Ruggedness
Output VSWR = 10:1 All Phase Angles,
No Module Damage
V
CC
= 4.2 V, P
IN
= 10 dBm, V
APC
= 2.6 V
or Permanent
Performance Degradation
Stability
Output VSWR = 10:1 All Phase Angles,
V
CC
= 4.2 V, P
IN
= 10 dBm, V
APC
= 2.6 V
-36
dBm
Electrical Specifications at 25C
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50
system, V
CC
= 3.2 and T
A
= 25C.
3 V InGaP HBT Power Amplifier
AP131-317
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
3
Specifications subject to change without notice. 2/02A
GND
N/C
GND
GND
RF In
2
4
3
12
10
11
RF Out
RF Out
RF Out
V
CC2
V
CC2
V
CC1
V
REF
GND
V
APC1
V
APC2
1
16
15
14
13
5
6
7
8
9
2 F
0
Pin Out
Pin Out Description
Pin
Symbol
Function
1
GND
Ground connection.
2
GND
Ground connection.
3
RF In
RF input to power amplifier. A 180
resistor to ground with an 18 pF in
series capacitor and a 100 pF DC
blocking capacitor are required.
4
GND
Ground connection.
5
V
CC
Power supply input voltage. 1.8 nH
bias injection inductor, and 100 pF,
1000 nF, 0.01
F, 0.1
F and 10
F
RF bypassing capacitors are required.
6
V
APC1
Power control input voltage for the
first two stages of the amplifier.
100 pF and 10,000 pF RF bypassing
capacitors are required. Can be
connected to Pin 7 for single power
control operation.
7
V
APC2
Power control input voltage for the
third stage of the amplifier. 100 pF
and 10,000 pF bypassing capacitors
are required. Can be connected to Pin
6 for single power control operation.
8
V
CC
Power supply input voltage.
100 pF and 0.01
F RF bypassing
capacitors are required.
9
GND
Ground connection.
10
RF Out/V
CC3
RF output and power supply input
voltage.
1. RF output: Two shunt matching
capacitors, 16 pF high Q and a
4.7 pF, and a series 100 pF DC
blocking capacitor is required.
2. V
CC3
: 100 pF, 1000 nF, 0.01
F,
0.1
F and 10
F RF bypassing
capacitors are required.
11
RF Out/V
CC3
RF output and power supply input
voltage. See description for Pin 10.
12
RF Out/V
CC3
RF output and power supply input
voltage. See description for Pin 10.
13
2 F
0
Second harmonic termination. This
pin can be used to alter the second
harmonic output characteristics, but
for nominal GSM operation, no
matching elements are required.
14
N/C
No connect.
15
V
CC2
Power supply input voltage. A 68 pF
interstage tuning capacitor is required
along with 100 pF, 1000 nF, 0.01
F,
0.1
F and 10
F RF bypassing
capacitors.
16
V
CC2
Power supply input voltage tied
to Pin 15.
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