Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 2/02A
Quad-Band GSM
Power Amplifier Module
Features
First Quad-Band InGaP HBT GSM
PA Module
3.2 V Nominal Operating Voltage
50
Internally Matched Input and Output
High Power Added Efficiency: 55% for
GSM and 50% for DCS and PCS
Small Size: 10 x 8 x 1.6 mm MCM Land
Grid Array Package
Low Current Standby Mode: < 30
A
Integral Band Select and Analog
Power Control
GPRS Class 12 Capable
-501
AP137-501
0.394 (10.0 mm)
0.004 (0.1 mm)
0.315 (8.0 mm)
0.004 (0.1 mm)
SIDE VIEW
TOP VIEW
BOTTOM VIEW
PIN 1
INDICATOR
0.069 (1.75 mm)
0.002 (0.051 mm)
0.069 (1.75 mm)
0.002 (0.051 mm)
0.082 (2.09 mm)
0.002 (0.051 mm)
0.046 (1.18 mm)
0.002 (0.051 mm)
0.06 (1.56 mm)
0.004 (0.10 mm)
0.04 (1.05 mm)
0.002 (0.05 mm)
0.075 (1.91 mm) BSC
0.075
(1.91 mm)
BSC
MOLD CAP
16
1
Description
The AP137-501 is a high performance power amplifier
module designed for use as the final amplification stage
in multi-band GSM and GPRS mobile phone applications
(824849, 880915, 17101785 and 18501910 MHz).
It features 3-cell battery operation, a band select switch,
a single positive analog power control input for all three
bands, and exceptional power added efficiency. The
AP137-501 also incorporates an advanced silicon bipolar
power control ASIC providing an outstandingly smooth and
flat power control response, greatly improving the ease
of use. The amplifier IC's are manufactured on an
advanced InGaP HBT process, known industry-wide for
its excellent reliability, ruggedness and performance. The
amplifier module is completely self-contained, requiring
no external matching components, and packaged in a
small land grid array package.
Preliminary
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply Voltage
2.8
3.2
4.2
V
Leakage Current
No Input RF Power
30
A
Band Select Voltage
GSM
0
0.5
V
DCS/PCS
2.0
2.8
V
Band Select Current
1.0
mA
Power Control Voltage
0.1
1.9
V
Power Control Current
1.0
mA
DC Specifications
Characteristic
Value
Supply Voltage V
CC
, Standby
6.5 V Max.
Mode, V
APC
< 0.3 (No RF Input Power)
Power Control Voltage
4 V Max.
Band Select Voltage
4 V Max.
Input Power (CW)
15 dBm Max.
Operating Case Temperature
-35 to +85C
Storage Temperature
-45 to 120C
Absolute Maximum Ratings
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 2/02A
Quad-Band GSM Power Amplifier Module
AP137-501
Parameter
Condition
Min.
Typ.
Max.
Unit
Frequency
GSM850
824
849
MHz
GSM900
880
915
MHz
Output Power
GSM850
31.0
31.5
dBm
GSM900
34.0
35.0
dBm
GSM850, V
CC
= 2.8 V,
31.0
dBm
T = -20 to +70C
GSM900, V
CC
= 2.8 V,
32.5
dBm
T = -20 to + 70C
Dynamic Range
V
APC
= 0.11.9 V
60
dB
Power Control Slope
V
APC
= 0.11.9 V
75
150
dB/V
APC
Power Added Efficiency
P
OUT
= 34 dBm
50
55
%
P
OUT
= 31 dBm
35
40
%
Input Power
3
6
10
dBm
Input VSWR
P
OUT
= 535 dBm
2:1
Forward Isolation
P
IN
= -5 dBm, V
APC
= 0.1 V
-40
dBm
P
IN
= 10 dBm, V
APC
= 0.1 V
-25
dBm
Harmonics
2 F
0
...7 F
0
-10
dBm
Noise in the R
X
Band
F = 849 MHz,
869 MHz, 100 KHz BW
-84
dBm
925 MHz, 100 KHz BW
-72
dBm
935 MHz, 100 KHz BW
-84
dBm
18051880 MHz, 100 KHz BW
-76
dBm
Ruggedness
19301990 MHz, 100 KHz BW
-76
dBm
Stability
Output VSWR = 10:1
No Module Damage
All Phase Angles, V
CC
= 4.2 V,
or Permanent
P
IN
= 10 dBm, V
APC
= 1.9 V
Performance Degradation
Band to Band Isolation
Output VSWR = 10:1
-36
dBm
All Phase Angles, V
CC
= 4.2 V,
P
IN
= 10 dBm, V
APC
= 1.9 V
2 F
0
Measured at DCS Output
-20
dBm
3 F
0
Measured at DCS Output
-20
dBm
Electrical Specifications
GSM850/GSM900 Mode
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50
system, V
CC
= 3.2 V, P
IN
= 6 dBm and T
A
= 25C.
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
3
Specifications subject to change without notice. 2/02A
Quad-Band GSM Power Amplifier Module
AP137-501
Parameter
Condition
Min.
Typ.
Max.
Unit
Frequency
DCS
1710
1785
MHz
PCS
1850
1910
MHz
Output Power
31.9
32.5
dBm
V
CC
= 2.8 V, T = -20 to +70C
29.5
dBm
Dynamic Range
V
APC
= 0.11.9 V
60
dB
Power Control Slope
V
APC
= 0.11.9 V
75
150
dB/V
APC
Power Added Efficiency
P
OUT
= 31.9 dBm
42
50
%
Input Power
3
6
10
dBm
Input VSWR
P
OUT
= 032 dBm
2:1
Forward Isolation
P
IN
= -5 dBm, V
APC
= 0.1 V
-48
dBm
P
IN
= 10 dBm, V
APC
= 0.1 V
-20
dBm
Harmonics
2 F
0
...7 F
0
-10
dBm
Noise in the R
X
Band
18051880 MHz, 100 KHz BW
-76
dBm
Ruggedness
Output VSWR = 10:1
No Module Damage
All Phase Angles, V
CC
= 4.2 V,
or Permanent
P
IN
= 10 dBm, V
APC
= 1.9 V
Performance Degradation
Stability
Output VSWR = 10:1
-36
dBm
All Phase Angles, V
CC
= 4.2 V,
P
IN
= 10 dBm, V
APC
= 1.9 V
Electrical Specifications
DCS/PCS Mode
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50
system, V
CC
= 3.2 V, P
IN
= 6 dBm and T
A
= 25C.
4
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 2/02A
Quad-Band GSM Power Amplifier Module
AP137-501
1
2
3
4
5
13
12
11
10
9
6
7
8
16
15
14
Si ASIC
V
APC
GND
V
CC
-PAC
V
CC
V
BS
GND
DCS/PCS_In
GSM_In
V
cc
V
CC
GND
GND
GND
GND
DCS/PCS_Out
GSM_Out
Pin Out
1
16
2
3
4
5
6
13
9
11
V
CC
DCS/
PCS_In
GSM_In
GSM_Out
V
APC
V
CC
V
CC
DCS/
PCS_Out
V
CC
V
BS
50
Microstrip
50
Microstrip
50
Microstrip
50
Microstrip
Application Schematic
Pin Out Description
Pin
Symbol
Description
1
DCS/PCS_In
RF input to DCS/PCS power amplifier.
2
V
APC
Analog power control input voltage.
10 nF RF bypassing capacitor
recommended.
3
V
CC
-PAC
Power supply input voltage for the
silicon ASIC. A 10
F RF bypassing
capacitor is required. This capacitor
is only required to help reduce power
supply ripple on the test board.
4
V
BS
Band select input voltage.
5
GSM_In
RF input to GSM850/GSM900 power
amplifier.
6
V
CC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
7
GND
Ground connection.
8
GND
Ground connection.
9
GSM_Out
RF output for GSM850/GSM900
amplifier.
10
GND
Ground connection.
11
V
CC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
12
GND
Ground connection.
13
DCS/PCS_Out
RF output for DCS/PCS power amplifier.
14
GND
Ground connection.
15
GND
Ground connection.
16
V
CC
Power supply input voltage. 10
F RF
bypassing capacitor is required. This
capacitor is only required to help reduce
power supply ripple on the test board.
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