Data Sheet
100637D
2001, 2002 Skyworks Solutions, Inc., All Rights Reserved.
March 22, 2002
RM914
Power Amplifier Module for AMPS Applications (824849 MHz)
The RM914 Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully
matched 6-pin surface mount module designed for mobile units operating in the
824-849 MHz cellular bandwidth. This device can be driven to power output levels
beyond 31 dBm for high efficiency FM mode operation. A single GaAs Microwave
Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The
MMIC contains on-board bias circuitry as well as input and interstage matching
circuits. The output match is realized off-chip and within the module package to
optimize efficiency and power performance into a 50
load. This device is
manufactured with Skyworks's GaAs HBT process that provides for all positive
voltage DC supply operation while maintaining high efficiency. Primary bias to the
RM914 can be supplied directly from a three cell nickel-cadmium, single cell
lithium-ion, or other suitable battery with output in the 3-4 volt range. Power down is
accomplished by setting the voltage on the low current reference pin to zero volts. No
external supply side switch is needed as typical "off" leakage is a few microamperes
with full primary voltage supplied from the battery.
Functional Block Diagram
MMIC
MODULE
RF
Input
(2)
RF
Output
(5)
VCC1
GND
GND
VCC2
VREF
Driver
Stage Bias
Power
Stage Bias
Input
Match
DA
Inter
Stage
Match
PA
Output
Match
(6, 7)
(3)
(1)
(4)
(6, 7)
Distinguishing Features
Low voltage positive bias supply
(3 to 4 Volts, typical)
High efficiency
Large dynamic range
6-pin package
(6mm x 6mm x 1.5 mm)
Power down control
Applications
Analog cellular (AMPS)
Wireless local loop (WLL)
Electrical Specifications
RM914
Power Amplifier Module for AMPS Applications (824849 MHz)
2
Skyworks
100637D
March 22, 2002
Electrical Specifications
The following tables list the electrical characteristics of the RM914 Power Amplifier.
Table 1
lists
the absolute maximum rating for continuous operation.
Table 2
lists the recommended operating
conditions for achieving the electrical performance listed in
Table 3
.
Table 3
lists the electrical
performance of the RM914 Power Amplifier over the recommended operating conditions.
Table 1. Absolute Maximum Ratings
(1)
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
RF Input Power
Pin
--
3.0
6.0
dBm
Supply Voltage
Vcc
--
3.4
6.0
Volts
Reference Voltage
Vref
--
3.0
3.3
Volts
Case Operating Temperature
Tc
30
25
+110
C
Storage Temperature
Tstg
55
--
+125
C
NOTE(S):
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below
nominal value.
Table 2. Recommended Operating Conditions
Parameter
Symbol
Minimum
Nominal
Maximum
Unit
Supply Voltage
Vcc
3.2
3.4
4.2
Volts
Reference Voltage
Vref
2.9
3.0
3.1
Volts
Operating Frequency
Fo
824.0
836.5
849.0
MHz
Operating Temperature
To
30
+25
+85
C
RM914
Electrical Specifications
Power Amplifier Module for AMPS Applications (824849 MHz)
100637D
Skyworks
3
March 22, 2002
Table 3. Electrical Specifications for AMPS Nominal Operating Conditions
(1)
Characteristics
Condition
Symbol
Minimum
Typical
Maximum
Unit
Quiescent current
Vref = 3.0
Vref = 2.9
Iq
Iq
60.0
--
100.0
80.0
130.0
--
mA
mA
Leakage Current
Vref = 0 V
Vcc = 3.4 V
I
LK
--
--
5.0
A
Gain
Po = 0 dBm
Po = 31 dBm
G
Gp
--
29.0
32.5
31.0
--
33.0
dB
dB
Power Added Efficiency
Po = 31 dBm
PAEa
48.5
51.0
--
%
Harmonic Suppression
Second
Third
Po
31 dBm
Po
31 dBm
AFo2
AFo3
--
--
43.0
41.0
36.0
34.0
dBc
dBc
Noise Power in RX Band
869-894 MHz
Po
31 dBm
RxBN
--
136.0
133.0
dBm/Hz
Noise Figure
--
NF
--
7.0
--
dB
Input Voltage Standing Wave Ratio
--
VSWR
--
1.4:1
1.5:1
--
Stability (Spurious output)
5:1 VSWR
All phases
S
--
--
60.0
dBc
Ruggedness No damage
Po
31 dBm
Ru
10:1
--
--
VSWR
NOTE(S):
(1)
Vcc = +3.4 V, Vref = +3.0 V, Freq = 836.5 MHz, Tc = 25 C, unless otherwise specified.
Table 4. Electrical Specifications Limits for AMPS Recommended Operating Conditions
(1)
Characteristics
Condition
Symbol
Minimum
Maximum
Unit
Quiescent current
Vref = 3.0
Vref = 2.9
Iq
Iq
--
--
170.0
150.0
mA
mA
Gain
Po = 31 dBm
Gp
25.0
35.5
dB
Power Added Efficiency
Po = 31 dBm
PAEa
48.0
--
%
Harmonic Suppression
Second
Third
Po
31 dBm
Po
31 dBm
AFo2
AFo3
--
--
35.0
30.0
dBc
dBc
Noise Power in RX Band
869-894 MHz
Po
31 dBm
RxBN
--
130.0
dBm/Hz
Input Voltage Standing Wave Ratio
--
VSWR
--
2:1
--
Stability (Spurious output)
5:1 VSWR
All phases
S
--
60.0
dBc
Ruggedness No damage
Po
31 dBm
Ru
10:1
--
VSWR
NOTE(S):
(1)
Per Table 2
Characterization Data
RM914
Power Amplifier Module for AMPS Applications (824849 MHz)
4
Skyworks
100637D
March 22, 2002
Characterization Data
The following charts illustrate the characteristics of a typical RM914 Power Amplifier tested in the
evaluation board described in the following section. The amplifier was selected by characterizing a
group of devices and choosing a part with average electrical performance at both nominal and
worst case (limit) conditions.
Figures 1
through
2
illustrate the analog characteristics of the
RM914.
Figure 1. Analog Gain vs. Output Power
25.00
27.50
30.00
32.50
35.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Pow er (dBm )
Gain
(
d
B
)
Vref = 3.0V, Vcc = 3.4V
Legend
824 MHz @ 30
C
824 MHz @ +25
C
824 MHz @ +85
C
837 MHz @ 30
C
837 MHz @ +25
C
837 MHz @ +85
C
849 MHz @ 30
C
849 MHz @ +25
C
849 MHz @ +85
C
RM914
Characterization Data
Power Amplifier Module for AMPS Applications (824849 MHz)
100637D
Skyworks
5
March 22, 2002
Figure 2. Analog Power Added Efficiency vs. Output Power
0.00
10.00
20.00
30.00
40.00
50.00
60.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
PA
E
(
%
)
Vref = 3.0V, Vcc = 3.4V
Figure 3. Analog Second Order Harmonic Suppression Magnitude
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
|
A
Fo2
(dB
c
)
|
Vref = 3.0V, Vcc = 3.4V
Legend
824 MHz @ 30
C
824 MHz @ +25
C
824 MHz @ +85
C
837 MHz @ 30
C
837 MHz @ +25
C
837 MHz @ +85
C
849 MHz @ 30
C
849 MHz @ +25
C
849 MHz @ +85
C
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