--1--
E96145A67-TE
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
30
V
Peak reverse voltage
V
RM
35
V
(RL
10 k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T410 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).
Features
Super-small-miniature flat package
Low series resistance:
1.5
Max.
(f=470 MHz)
Large capacitance ratio: 12.0 Typ.
(C
1
/C
25
)
Small leakage current:
10 nA Max. (V
R
=25 V)
Capacitance deviation in a matching group:
within 6 %
Applications
Electronic tuning of BS/CS tuners
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
1T410
M-290
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
I
R
V
R
C
1
C
25
C
1
/C
25
rs
C
Conditions
V
R
=25 V
I
R
=1 A
V
R
=1 V, f=1 MHz
V
R
=25 V, f=1 MHz
V
R
=5 V, f=470 MHz
V
R
=1 to 25 V, f=1 MHz
Min.
30
5.96
0.46
10.0
Typ.
12.0
1.30
Max.
10
7.16
0.60
1.50
6
Unit
nA
v
pF
pF
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--2--
1T410
1
2
5
10
20
50
0.1
0.2
0.5
1
2
5
10
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
C-Diode capacitance (pF)
Ta=25C
10
100
Reverse current vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
I
R
-Reverse current (pA)
1
0.70
0.90
Forward voltage vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
V
F
-Forward voltage (V)
I
F
=1mA
0.80
0.60
35
45
Reverse voltage vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
V
R
-Reverse voltage (V)
40
30
V
R
=28V
0.1
I
R
=10A
--3--
1T410
20
0
20
40
60
80
0.98
0.99
1.00
1.01
1.02
1.03
Diode capacitance vs. Ambient temperature
Ta-Ambient temperature (C)
C (Ta)/C (25C)-Diode capacitance
1
100
Reverse current vs. Reverse voltage
1
3
10
30
V
R
-Reverse voltage (V)
I
R
-Reverse current (pA)
10
0.1
V
R
=1V
V
R
=2V
V
R
=7V
V
R
=25V
1000
Temperature coefficient of diode capacitance
1
2
5
10
V
R
-Reverse voltage (V)
Temperature coefficient (ppm/C)
50
20
50
500
200
100
Ta=80C
Ta=60C
V
R
=15V
Ta=25C
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