--1--
E98905-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
30
V
Peak reverse voltage
V
RM
35
V
(RL
10 k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T417 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).
Features
Super-small-miniature flat package
Low series resistance:
1.5
Max. (f=470 MHz)
Large capacitance ratio: 15.5 Typ.
(C
1
/C
25
)
Small leakage current:
10 nA Max. (V
R
=25 V)
Capacitance deviation in a matching group:
within 6 %
Applications
Electronic tuning of BS/CS tuners
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-290
1T417
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
I
R
V
R
C
1
C
25
C
1
/C
25
rs
C
Conditions
V
R
=25 V
I
R
=1 A
V
R
=1 V, f=1 MHz
V
R
=25 V, f=1 MHz
V
R
=5 V, f=470 MHz
V
R
=1 to 25 V, f=1 MHz
Min.
Typ.
Max.
Unit
10
nA
30
V
7.8
8.6
9.4
pF
0.5
0.6
pF
13.0
15.5
1.30
1.50
6.0
%
--2--
1T417
Example of Representative Characteristics
10
5
2
1
0.2
0.5
0.1
C
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
R
-Reverse voltage (V)
1
2
5
10
20
50
Forward voltage vs. Ambient temperature
0.80
0.90
0.70
0.60
20
V
F
-
F
o
r
w
a
r
d
v
o
l
t
a
g
e
(
V
)
Ta-Ambient temperature (
C)
I
F
=1mA
0
20
40
60
80
Reverse current vs. Ambient temperature
Diode capacitance vs. Reverse voltage
1000
100
10
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
Ta-Ambient temperature (
C)
20
0
20
40
60
80
Reverse voltage vs. Ambient temperature
40
45
35
30
20
V
R
-
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
Ta-Ambient temperature (
C)
I
R
=10
A
V
R
=25V
Ta=25
C
0
20
40
60
80
--3--
1T417
Diode capacitance vs. Ambient temperature
1.03
1.02
1.00
1.01
0.99
0.98
Ta-Ambient temperature (
C)
20
0
20
40
60
80
C
(
T
a
)
/
C
(
2
5
C
)
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
Reverse current vs. Reverse voltage
100
10
1
0.1
V
R
-Reverse voltage (V)
1
3
10
30
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
V
R
=2V
V
R
=1V
V
R
=7V
V
R
=15V
V
R
=25V
Temperature coefficient of diode capacitance
1000
200
500
30
50
100
V
R
-Reverse voltage (V)
1
5
10
2
20
50
T
e
m
p
e
r
a
t
u
r
e
c
o
e
f
f
i
c
i
e
n
t
(
p
p
m
/
C
)
Ta=80
C
Ta=60
C
Ta=25
C
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