Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
Low voltage operation
Low noise: NF = 1.2dB (typ.) at 800MHz
High gain: Ga = 20dB (typ) at 800MHz
High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25C)
Drain to source voltage
V
DSX
8
V
Gate 1 to source voltage
V
G1S
6
V
Gate 2 to source voltage
V
G2S
6
V
Drain current
I
D
80
mA
Allowable power dissipation
P
D
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
1
3SK165A
E96Y12-PS
GaAs N-channel Dual Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
For the availability of this product, please contact the sales office.
2
3SK165A
2.0
1.5
1.0
0.5
0
0
20
30
40
50
V
G1S
Gate 1 to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
0.5V
1.5V
10
1.0V
0
2
4
6
8
0
10
20
30
50
V
DS
Drain to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
DS
V
G1S
= 0V
0.4V
0.8V
1.0V
1.2V
1.8V
40
0.2V
0.6V
1.4V
1.6V
(V
G2S
= 1.5V)
Typical Characteristics (Ta = 25C)
Electrical Characteristics
(Ta = 25C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 8V
V
G1S
= 4V
V
G2S
= 0V
V
G1S
= 4V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= 4V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 800MHz
20
1
1
15
16
22
0.5
7.5
1.2
20
100
20
20
55
4
4
1.0
25
2.5
A
A
A
mA
V
V
ms
pF
fF
dB
dB
Symbol
Condition
Min.
Typ.
Max.
Unit
I
DSS
classification
Product name classification
3SK165A-0
3SK165A-1
I
DSS
RANK
20 to 55mA
20 to 35mA
3
3SK165A
2.0
1.5
1.0
0.5
0
0
20
30
40
50
V
G2S
Gate 2 to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
G2S
(V
DS
= 5V)
V
G1S
= 0V
0.4V
0.6V
1.0V
1.2V
1.4V
0.2V
0.8V
10
2.0
1.5
1.0
0.5
0
0
20
30
40
50
V
G1S
Gate 1 to source voltage [V]
g
m
F
o
r
w
a
r
d
t
r
a
n
s
f
e
r
a
d
m
i
t
t
a
n
c
e
[
m
s
]
gm vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
0.5V
10
1.0V
0
0.8
1.6
2.2
0
1.0
1.5
2.5
3.0
f Frequency [GHz]
N
F
m
i
n
M
i
n
i
m
u
m
n
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF, Ga vs. f
0.5
0.4
1.2
2.0
2.0
10
20
25
35
40
15
30
G
a
G
a
i
n
[
d
B
]
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
Ga
NFmin
0.6
1.4
0.2
1.0
1.8
2.0
1.4
1.0
0.6
0.2 0 0.2
0
2
3
4
6
V
G1S
Gate 1 to source voltage [V]
N
F
N
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF vs. V
G1S
(V
DS
= 5V, f = 800MHz)
1
1.6
1.2
0.8
0.4
5
1.8
V
G2S
= 0.5V
1.0V
1.5V
0
10
15
25
30
V
G1S
Gate 1 to source voltage [V]
G
a
G
a
i
n
[
d
B
]
Ga vs. V
G1S
5
20
V
G2S
= 1.5V
1.0V
0.5V
(V
DS
= 5V, f = 800MHz)
2.0
1.4
1.0
0.6
0.2 0 0.2
1.6
1.2
0.8
0.4
1.8
0
4
8
12
16
20 22
0
1.0
1.5
2.5
3.0
I
D
Drain current [mA]
N
F
N
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF, Ga vs. I
D
(V
DS
= 5V, V
G2S
= 1.5V, f = 800MHz)
0.5
2
6
10
14
2.0
18
0
10
15
25
30
5
20
G
a
G
a
i
n
[
d
B
]
Ga
NF
4
3SK165A
S-parameter vs. Frequency Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
(Z
0
= 50
)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.970
0.968
0.965
0.963
0.961
0.958
0.958
0.958
0.958
0.958
0.954
0.953
0.950
0.949
0.947
0.947
0.946
0.945
0.942
0.941
0.7
1.6
2.4
3.2
4.2
4.9
5.8
6.7
7.3
8.3
9.0
9.6
10.5
11.2
12.1
12.9
13.9
14.5
15.3
15.9
S22
MAG
ANG
0.001
0.002
0.004
0.004
0.005
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.011
0.011
0.011
0.012
0.012
0.013
0.013
73.3
91.6
80.5
85.0
84.9
84.7
83.2
82.5
82.0
78.1
84.4
76.7
77.8
80.9
80.0
80.5
74.3
79.2
80.6
79.5
S12
MAG
ANG
2.110
2.105
2.097
2.094
2.083
2.070
2.058
2.048
2.039
2.021
2.008
1.990
1.973
1.954
1.941
1.928
1.901
1.888
1.865
1.846
176.7
173.0
169.7
166.4
162.7
159.5
156.1
152.8
149.4
146.0
142.8
139.6
136.3
133.3
130.0
126.8
123.7
120.6
117.3
114.1
S21
MAG
ANG
0.999
0.998
0.991
0.984
0.980
0.970
0.964
0.956
0.949
0.938
0.927
0.911
0.898
0.882
0.868
0.856
0.838
0.824
0.809
0.792
1.8
3.7
5.7
7.8
10.0
12.2
14.1
16.1
17.9
19.7
21.3
22.8
24.4
25.8
27.4
29.0
30.2
31.5
32.9
34.1
S11
MAG
ANG
Noise Figure Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
4.4
6.4
8.2
9.9
11.4
12.8
14.2
15.5
16.7
17.9
19.1
20.3
21.5
22.8
24.2
25.6
27.1
28.8
30.6
63.7
63.0
62.2
61.5
60.7
59.9
59.1
58.4
57.6
56.8
56.0
55.2
54.3
53.5
52.7
51.9
51.0
50.2
49.3
MAG
Rn
(
)
0.72
0.75
0.81
0.84
0.90
0.94
0.98
1.02
1.07
1.13
1.17
1.22
1.26
1.31
1.38
1.42
1.48
1.52
1.57
0.97
0.95
0.93
0.91
0.88
0.86
0.84
0.83
0.81
0.80
0.79
0.78
0.78
0.77
0.77
0.77
0.76
0.76
0.75
Gamma Optimum
NFmin
(dB)
ANG
5
3SK165A
Package Outline
Unit: mm
M-254
SONY CODE
EIAJ CODE
JEDEC CODE
M-254
PACKAGE MASS
0.01g
2.9 0.2
1.9
( 0.95 )
( 0.95 )
1.1 0.1
+ 0.2
0
.
6
2
.
8
0
.
2
1
.
6
0
.
1
+
0
.
2
1.8
( 0.85 )
( 0.95 )
0 to 0.1
0.10 0.01
+ 0.1
0.6 0.05
+ 0.1
0.4 0.05
+ 0.1
1
2
3
4
1. Source
2. Gate1
3. Gate2
4. Drain
PDF 
ZIP