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--1--
E99201
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
4ch. Read/Write Amplifier for
Thin Film Head of Hard Disk Drive
CXA3510N
Description
The CXA3510N is a Read/Write Amplifier for the
thin film head of hard disk drive and designed to
handle up to 4 channel heads.
Features
Operate on single +5 V power supply
Low power consumption
Read : 85 mW
Write : 115 mW + I
W
5
Idle : 8 mW
Designed for two terminal thin-film or MIG heads
Read amplifier emitter follower output featuring
360 times gain (typ).
Differential input capacitance for Read : 6pF (typ)
Input noise : 0.47 nV /
Hz (typ)
Write current range : 5 to 15 mA
Differential Head voltage swing : 9 Vp-p (typ)
I
W
Rise / Fall times : 3.7 ns (typ)
(L
H
=540 nH, R
H
=25
, I
W
=10 mA)
Differential P-ECL write data input
Built-in write unsafe detection circuit.
Built-in Servo write function (2/4 ch).
Built-in IC protection circuit for short of head to
GND.
Read data outputs are high impedance in write
mode.
Unselected head voltage is GND potential.
Built-in supply voltage monitor circuit prohibits
incorrect write during power on or abnormal
voltage.
Self switching damping resistance (R
D
= 360
).
Function
Read, Write and Write unsafe detection for HDD,
power supply ON/OFF detection.
Structure
Bipolar silicon monolithic IC
20 pin SSOP (Plastic)
Absolute Maximum Ratings (Ta=25 C)
Supply voltage
V
CC
6
V
Write current
I
W
20
mAo-p
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
55 to +150
C
Allowable power dissipation
P
D
620
mW
WUS/SE pin input current
I
SEH
15
mA
Recommended Operating Conditions
Supply voltage
V
CC
5.0 V10
%
Write current
I
W
5 to 15 mAo-p
For the availability of this product, please contact the sales office.
--2--
CXA3510N
POWER
ON/OFF
DETECTOR
DRIVER
AMP
AMP
DRIVER
MODE
CONTROL
WRITE
CURRENT
SOURCE
AMP
HEAD
SELECT
WRITE
UNSAFE
DETECTOR
IC
PROTECTOR
H0X
H0Y
H1X
H1Y
H2X
H2Y
H3X
H3Y
GND
V
CC
R/W
WC
RDY
RDX
HS0
HS1
WDX
WDY
WUS/SE
XCS
AMP
DRIVER
DRIVER
8
1
2
3
4
5
6
7
9
10
20
14
15
16
17
18
19
13
12
AMP
11
Block Diagram and Pin Configuration
--3--
CXA3510N
Pin Description
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
Symbol
GND
H0X
H0Y
H1X
H1Y
H2X
H2Y
H3X
H3Y
V
CC
WUS/SE
WDY
WDX
Equivalent circuit
2k
2k
V
CC
GND
2
4
6
8
3
5
7
9
100k
Description
Head.
4 channels provided.
5 V power supply.
Write unsafe detection output /
Servo Enable signal input.
Differential P-ECL write data
input.
V
CC
GND
11
V
CC
GND
12
13
--4--
CXA3510N
No.
14
15
16
17
18
19
20
Symbol
HS1
HS0
RDX
RDY
WC
R/W
XCS
Equivalent circuit
V
CC
GND
14
15
100k
2.1V
V
CC
GND
16
17
V
CC
GND
18
2.5V
V
CC
GND
100k
2.1V
19
V
CC
GND
100k
2.1V
20
Description
Head select signal input.
Selects one of 4 heads according
to Table 2.
Read Amplifier output.
A setting resistor for the write
current value is connected
between this pin and GND.
Read/Write signal input
At "High" : Read,
at "Low" : Write.
Power save signal input
At "High" : Power saving.
--5--
CXA3510N
Electrical Characteristics
(Unless otherwise specified, V
CC
=5 V, Ta=25
C, Write current I
W
=15 mA)
Refer to Fig.1
No.
1-1
1-2
1-3
2-1
2-2
2-3
2-4
2-5
2-6
2-7
2-8
3-1
3-2
Item
Current consumption
for Read
Current consumption
for Write
Current consumption
for idle
Digital input "Low"
input voltage
Digital input "High"
input voltage
Digital input "Low"
input current
Digital input "High"
input current
Write data input
"Low" input voltage
Write data input
"Hig
h
" input voltage
Write data
input current
Unselected
head voltage
Write unsafe output
saturation voltage
Write unsafe output
leak current
Symbol
I
CCR
I
CCW
I
CCI
V
IL
V
IH
I
IL
I
IH
V
WDL
V
WDH
I
WD
V
unsel
V
WUS
I
WUS
SW conditions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
a
a
a
a
a
b
a
a
b
a
a
b
b
a
a
a
a
a
a
b
a
a
b
a
a
b
a
a
a
a
a
a
a
b
a
a
b
a
a
b
a
b
a
a
a
a
a
b
a
a
b
a
a
b
a
a
a
a
a
a
a
b
a
a
b
b
b
b
b
b
a
a
a
a
a
b
a
a
b
a
a
b
a
a
b
a
a
a
b
b
a
c
c
c
c
b
a
a
a
a
a
a
a
a
a
a
b
a
a
b
a
a
Measurement conditions
Test point : l
2
Test point : l
2
Test point : I
2
Digital input :
Pins 14, 15, 19, 20
"High" applied voltage : 5 V
"Low" applied voltage : 0 V
Test point : l
6
, l
7
, l
8
, I
9
Input voltage : 4 V
Output current : 1 mA
Test point : V
1
Test point : l
3
Min.
Typ.
Max.
Unit
11
17
26
mA
16
22
36
mA
+I
W
+I
W
+I
W
1.0
1.6
2.3
mA
0.8
V
2.0
V
100
A
100
A
V
WDH
V
WDH
V
2.0
0.25
V
CC
V
CC
V
1.1
0.4
50
A
0.3
V
0.5
V
50
A
--6--
CXA3510N
No.
4
5-1
5-2
5-3
5-4
6-1
6-2
7
8
Item
Supply power
ON/OFF detector
threshold voltage
Write current
setting range
Write current voltage
Write current gain
Write current
setting constant
WUS/SE voltage
WUS/SE sink current
Read amplifier
differential voltage gain
Frequency band
width (3 dB)
Symbol
V
TH
I
W
V
WC
A
W
K
W
V
SEH
I
SEH
A
V
BW
Measurement conditions
When V
CC
is lowered from 5 V in
Write mode and I
W
does not flow
anymore, V
CC
voltage is set to
V
THOFF
. When V
CC
is raised from 3
V and I
W
starts to flow, V
CC
voltage
is set to V
THON
.
I
W
=A
W
V
WC
/R
WC
I
W
=K
W
/R
WC
Servo write enabled
Servo write enabled
Input voltage SG1 :
1 mVp-p, 300 kHz
Load resistance (RDX, RDY) :
1 k
Test point : V4 [Vp-p]
AV
=
V4
SG1
Frequency at which A
V
lowers
by 3 dB
Min.
Typ.
Max.
Unit
3.4
3.9
4.3
V
5
15
mA
o-p
2.25
2.5
2.75
V
18
20
22
mA/mA
45
50
55
V
CC
V
CC
V
+1.5
+1.6
5
14
mA
305
360
415
V/V
100
140
MHz
SW conditions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
b
a
a
a
a
a
b
a
a
b
a
b
a
a
a
a
a
a
a
b
a
a
b
a
a
b
a
a
b
a
a
a
a
b
a
a
b
a
a
b
a
a
b
a
a
a
a
b
b
a
b
a
a
b
a
a
b
a
a
a
c
b
a
a
b
a
a
b
b
a
b
a
a
a
c
b
a
a
b
a
a
b
b
a
--7--
CXA3510N
No.
9
10
11
Item
Input referred noise
Common mode
rejection ration
Power supply
rejection ratio
Symbol
E
N
CMRR
PSRR
Measurement conditions
Head impedance : 0
,
when the read amplifier output
voltage is amplified 100 times
and voltage passed though a LPF
(low pass filter of cutoff frequency
15 MHz) is V
N
[Vrms],
EN
=
V
N
100 AV
15
10
6
Test point : V
5
In-phase input voltage
SG2 : 100 mVp-p, 20 MHz
When the Read amplifier output is
V
CM
[mVp-p],
100
CMRR
=
20 log
V
CM
+20 log
A
V
Test point : V
4
Ripple voltage SG3 :
100 mVp-p, 20 MHz
When the Read amplifier output is
V
P
[mVp-p],
100
PSRR
=
20 log
V
P
+20 log
A
V
Test point : V
4
Min.
Typ.
Max.
Unit
nV
0.47
0.6
Hz
50
dB
50
dB
SW conditions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
a
a
a
a
a
b
a
a
b
a
a
b
b
a
b
a
a
a
d
b
a
a
b
a
a
b
b
a
a
a
a
a
a
a
a
a
b
a
a
b
b
a
--8--
CXA3510N
No.
12
13
14
15
Item
Channel
separation
Read data output
offset voltage for Read
RDX, RDY common
mode output voltage
difference between
modes
RDX, RDY common
mode output voltage
for Read
Symbol
CS
V
OFFR
Vdiff
V
RD
Measurement conditions
Selected head input voltage
: 0 mVp-p
Unselected head input voltage
SG1 : 100 mVp-p, 20 MHz
When the Read amplifier output
is V
CS
[mVp-p],
100
CS
=
20 log
V
CS
+20 log
A
V
Test point : V
4
V
OFFR
= V
2
V
3
Test point : V
2
, V
3
Test point : Pin 16, 17
Test point : V
2
, V
3
Min.
Typ.
Max.
Unit
50
dB
250
250
mV
300
300
mV
V
CC
V
CC
V
CC
V
2.6
2.3
2.0
SW conditions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
a
b
a
a
c
b
a
a
b
a
a
b
b
a
a
a
a
a
e
b
a
a
b
a
a
a
b
a
a
a
a
a
e
b
a
a
b
a
a
b
c
a
a
a
a
a
e
b
a
a
b
a
a
a
b
a
--9--
CXA3510N
Unless otherwise specified, V
CC
=5 V, Ta=25 C, f
WD
(Write data frequency) =5 MHz, I
W
=15 mA, L
H
(Head
inductance) =1 H, R
H
(Head DC resistance value) =30
Refer to Fig. 2 to Fig. 4
No.
14
15-1
15-2
16
17-1
17-2
18
19
20-1
20-2
Item
Head differential
voltage amplitude
Mode switching time
Read to Write
Mode switching time
Write to Read
Mode switching time
Power saving
to Read
Mode switching time
safe to unsafe
Mode switching time
unsafe to safe
Head switching time
Write current
propagation delay
time
Write current
rise/fall time
Write current
rise/fall time
Measurement conditions
Differential voltage between HX pin and HY pin
at switching of Write current
T
RW
is the time required for Write current to turn
to 90 % after Pin 19 changes from "High" to
"Low".
T
WR1
is the time required for the Read amplifier
output
to turn to 90 % after Pin 19 changes
from "Low" to "High".
T
WR2
is the time required for Write current to
decreases to 10 % after Pin 19 changes from
"Low" to "High".
T
IR
is the time required for the Read amplifier
output
to turn to 90 % after Pin 20 changes
from "High" to "Low".
T
SA1
is the time required for Pin 11 to turn
"High" after the last transition of Write data
when Write data is stopped in Write mode.
T
SA2
is the time required for Pin 11 to turn "Low"
after the first transition of Write data in Write
mode.
T
H
is the time required for the Read amplifier
output
to reach 90 % when the selected head
switched in Read mode.
T
PD
is the time required for Write current to
reach 90 % after the Write data falling edge.
T
R
is the time required for Write current to reach
90 % from 10 %; T
F
is the same time required
to reach 10 % from 90 %. L
H
=0 H, R
H
=0
L
H
=540 nH, R
H
=25
, I
W
=10 mA
T
R
is the time required for Write current to reach
90 % from 10 %; T
F
is the same time required
to reach 10 % from 90 %.
Symbol
V
SW
T
RW
T
WR1
T
WR2
T
IR
T
SA1
T
SA2
T
H
T
PD
T
R
/T
F
T
R
/T
F
Min. Typ. Max. Unit
9
Vp-p
130 150
ns
180 220
ns
100 200
ns
1
s
1.0
2.3
3.0
s
0.6
s
0.6
s
2
7
ns
1
3
ns
3.7
ns
Read amplifier output 100 mVp-p 10 MHz
--10--
CXA3510N
Test Circuit 1
a b c
d
e
3.3k
A
A
A
A
A
A
V
V
1
a b
a
b
a b
a b
a
b
a b
a
b
a b
S5
A
I
1
33
SG1
0.1
0.1
0.1
a b c
d
e
SG2
A
I
8
I
7
I
6
I
5
I
4
I
3
I
9
S14
S13
S12
S11
S10
S9
S8
S7
S2
S3
S4
S1
V
CC
5V
a
b
1
1
1
5.1k
a b
V
CC
5V
SG3
A
I
2
S6
V
3
V
V
2
V
AMP
AMP
V
4
V
100
1
V
5
V
LPF
to15MHz
1k
1k
b
a b
b a
5V
a
b
a b
a
b
a
2
3
1
9
8
5
4
6
7
10
12
19
13
14
15
16
17
18
20
11
a b c
a b c
3V
PG
SG5
SG4
PG
4V
c
PG
SG6
A
I
14
6.5V
Test Circuit 2
3.3k
1
1
AMP
PG
1
1k
1k
1
5.1k
5V
PG
L
H
1H
L
H
1H
L
H
1H
L
H
1H
2
3
1
9
8
5
4
6
7
10
PG
PG
PG
12
19
13
14
15
16
17
18
20
11
Fig. 1
Fig. 2
--11--
CXA3510N
Timing Chart 1
50%
50%
T
RW
10%
10%
T
WR
1
90%
WDX
WDY
I
WX
I
WY
RDX
RDY
90%
90%
R/W
50%
90%
T
IR
PS
T
WR
2
Fig. 3
Fig. 4
Timing Chart 2
T
PD
90%
90%
90%
10%
10%
T
R
T
F
50%
T
SA2
T
SA1
50%
WDX
WDY
I
WX
I
WY
WUS
--12--
CXA3510N
Description of Functions
Read amplifier
This is a low noise amplifier for amplifying the signals from the heads with an emitter follower output.
The RDX and RDY are the outputs of the differential amplifier whose polarity between the RDX and X side of
the head input is same.
Write circuit
The Write data input to WDX pin and WDY pin passes through the buffer amp. It drives the Write switch
circuit which supplies the Write current to the heads.
The Write current flows into the X side when WDX is "Low" and WDY is "High".
Mode control
The mode are set as shown Table 1 by XCS, R/W and WUS/SE.
Table 1. Mode selection
Head selection
The heads are selected as shown in Table 2 by the HS0 and HS1 pins.
Table 2. Head selection
Servo write mode
This mode allows for writing to multiple channels at once.
To enable servo write mode follow these steps:
(1) Place the device in the Read mode.
(2) Set HS0 and HS1 following Table 3.
(3) Set WUS/SE to V
SEH
, or input I
SEH
to WUS/SE.
(4) While maintaing step (2) and (3) above make R/W low, placing the device in servo write mode.
R/W
L
H
L
X
XCS
L
L
L
H
WUS/SE
X
X
X
HS0
HS1
See Table 2
See Table 3
X
X
Mode
Write
Read
Servo Write
Power saving
HS0
L
H
L
H
HS1
L
L
H
H
Head
0
1
2
3
--13--
CXA3510N
Write unsafe detection circuit
This circuit detects write errors.
In normal Write mode, the WUS output is low; in the conditions listed below, it is high.
Head inputs is open (under the condition which. RH=
and Write data frequency is
10 MHz)
Head input is shorted to GND or V
CC
.
Write data frequency is abnormally low.
No write current.
In read mode.
Supply voltage is abnormal (see power supply ON/OFF detection).
Power supply ON/OFF detection
This circuit monitors V
CC
to detect erroneous Writes. The error status is established when V
CC
falls below the
threshold voltage (V
TH
) of the power supply ON/OFF detector, in which case the recording and playback
functions are prohibited. When V
CC
rises above, V
TH
, the prohibition of these functions is released.
Table 3. Head selection in Servo Write mode
HS0
L
H
L
H
HS1
L
L
H
H
Head
0, 1
0, 1, 2, 3
2, 3
0, 1, 2, 3
--14--
CXA3510N
Application Circuit
L
H
1H
5.1k
3.3k
R
WC
5V
L
H
1H
L
H
1H
L
H
1H
PULSE
DETECTOR
1
2
3
1
9
8
5
4
6
7
10
12
19
13
14
15
16
17
18
20
11
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
--15--
CXA3510N
Notes on operation
This device handles high frequency and high gain signals. Please note the following;
Connect V
CC
decoupling capacitor of approximately 1000 pF near the device.
Make the GND area as large as possible.
When using as 2-channel, short-circuit the X and Y sides of unused head pins or leave them open.
The WC pin is a constant voltage pin. When noise affects this pin, it creates noise in Write current.
Therefore, locate R
WC
as close to the device as possible.
Write unsafe detection circuit
This circuit uses the voltage waveforms of the head pins for detection.
VFB must be more than 2 V. When V
FB
< 2 V, it is possible that Write unsafe detection maximum
frequency becomes more than 1 MHz.
The normal operating area of write unsafe detection circuit is changed by head inductance, head DC
resistance, write current and other.
V
TH
GND
Voltage waveform
of head pins (HX, HY)
V
TH
=1.4V
V
FB
Wave form of write data
--16--
CXA3510N
Application Notes
Use the following characteristics for reference.
V
CC
=5 V, Ta=25 C
Item
Write mode
Differential output capacitance
Differential output resistance
Differential input capacitance
Read mode
Differential input resistance
Output resistance
Unselected head differential current in Write
mode
Write current symmetry
Symbol
C
O
R
O
C
I
R
I
R
RD
I
US
T
AS
Conditions
Between head input pins
Between head input pins
f=5 MHz
RDX or RDY, f=5 MHz
L
H
=1 H, R
H
=30
I
W
=15 mA
L
H
=0 H, R
H
=0
I
W
=15 mA
Min. Typ. Max.
Unit
4.5
6
pF
260
360
470
6
10
pF
650 1500 3000
50
0.2 mAp-p
0.5
0.5
ns
Fig.5 Write current vs. R
WC
I
W
-
W
r
i
t
e
c
u
r
r
e
n
t
(
m
A
)
5
10
15
2
5
10
20
R
WC
(k
)
18
WC
R
WC
T
AS
=T
1
T
2
Setting of Write current
Write current can be set with resistor R
WC
(k
) at Pin 18.
I
W
=K/R
WC
(mA) Refer to Fig. 5.
Fig.6 Write current setting constant vs. Write current
W
r
i
t
e
c
u
r
r
e
n
t
s
e
t
t
i
n
g
c
o
n
s
t
a
n
t
K
55
52.5
50
47.5
45
4
6
8
10
12
14
16
Write Current I
W
(mA)
K=R
WC
I
W
I
WX
+I
WY
50%
50%
50%
T
1
T
2
--17--
CXA3510N
Normalized write current
vs. Supply voltage
1.04
1.02
1
0.98
0.96
I
W
/
I
W
(
V
C
C
=
5
V
)
4
5
6
Supply voltage V
CC
[V]
Ta=25C
R
WC
=3.3k
1.04
1.02
1
0.98
0.96
I
W
/
I
W
(
T
a
=
2
5
C
)
25
25
75
Ambient temperature Ta [C]
V
CC
=5V
R
WC
=3.3k
0
50
1.04
1.02
1
0.98
0.96
A
V
/
A
V
(
V
C
C
=
5
V
)
4
5
6
Supply voltage V
CC
[V]
Ta=25C
1.04
1.02
1
0.98
0.96
A
V
/
A
V
(
T
a
=
2
5
C
)
25
25
75
Ambient temperature Ta [C]
0
50
4
3.6
P
o
w
e
r
s
u
p
p
l
y
O
N
/
O
F
F
D
e
t
e
c
t
o
r
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
[
V
]
25
25
75
Ambient temperature Ta [C]
Normalized write current
vs. Ambient temperature
Normalized read amplifier voltage tgain
vs. Supply voltage
Normalized read amplifier voltage gain
vs. Ambient temperature
Power supply ON/OFF detector threshold
voltage vs. Ambient temperature
0
50
3.8
4.2
OFF ON
ON OFF
V
CC
=5V
CXA3510N
--18--
20PIN SSOP (PLASTIC)
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE STRUCTURE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
EPOXY RESIN
SOLDER / PALLADIUM
42/COPPER ALLOY
0.1g
SSOP-20P-L01
SSOP020-P-0044
PLATING
0.1 0.1
0
.
5
0
.
2
0 to 10
DETAIL A
NOTE: Dimension "
" does not include mold protrusion.
b=0.22 0.05
+ 0.1
0
.
1
5
0
.
0
2
+
0
.
0
5
(0.22)
(
0
.
1
5
)
0
.
1
5
0
.
0
1
DETAIL B : SOLDER
DETAIL B : PALLADIUM
+
0
.
0
3
b=0.22 0.03
6.5 0.1
4
.
4
0
.
1
0.65
20
11
10
1
A
0.1
1.25 0.1
+ 0.2
6
.
4
0
.
2
0.13 M
b
Package Outline Unit : mm
NOTE : PALLADIUM PLATING
This product uses PdPPF (Palladium Pre-Plated Lead Frame).
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