CXK581000ATM/AYM/AM/AP

E92756D53-PP

131072-word

8-bit High Speed CMOS Static RAM

Description

The CXK581000ATM/AYM/AM/AP is a high speed

CMOS static RAM organized as 131072-words by

8 bits.

A polysilicon TFT cell technology realized extremely low

stand- by current and higher data retention stability.

Special feature are low power consumption, high

speed and broad package line-up.

The CXK581000ATM/AYM/AM/AP ia a suitable

RAM for portable equipment with battery back up.

Features

· Fast access time:

CXK581000ATM/AYM/AM/AP (Access time)

-55LL/55SL

55ns (Max.)

-70LL/70SL

70ns (Max.)

-10LL/10SL

100ns (Max.)

· Low standby current:

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL

20µA (Max.)

-55SL/70SL/10SL

12µA (Max.)

· Low data retention current

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL

12µA (Max.)

-55SL/70SL/10SL

4µA (Max.)

· Single +5V supply: +5V ±10%

· Low voltage data retention: 2.0V (Min.)

· Broad package line-up

· CXK581000ATM/AYM

8mm

20mm 32 pin TSOP package

· CXK581000AM

525mil 32 pin SOP package

· CXK581000AP

600mil 32 pin DIP package

Functions

131072-word

8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Block Diagram

GND

CE1
CE2

A10
A11

A13

A15
A16

A14
A12

A6
A5

A3
A2

A1
A0

Buffer

Row

Decoder

Memory

Matrix

1024

I/O Gate

Column

Decoder

I/O Buffer

Buffer

I/O 1

I/O 8

CXK581000ATM

32 pin TSOP (Plastic)

CXK581000AYM

32 pin TSOP (Plastic)

CXK581000AM

32 pin SOP (Plastic)

CXK581000AP

32 pin DIP (Plastic)

-55LL/70LL/10LL
-55SL/70SL/10SL

For the availability of this product, please contact the sales office.

CXK581000ATM/AYM/AM/AP

Pin Configuration (Top View)

A11

A9
A8

A13

CE2

A15

A16
A14

A12

A6
A5

A4
A5

A6
A7

A12
A14

A16

A15

CE2

A13

A11

A2
A1

A0
I/O1

I/O2
I/O3

GND
I/O4

I/O5
I/O6

I/O7
I/O8

CE1
A10

A10
CE1

I/O8
I/O7

I/O6
I/O5

I/O4
GND

I/O3
I/O2

I/O1
A0

A1
A2

CXK581000AYM

(Mirror Image Pinout)

CXK581000ATM

(Standard Pinout)

Pin Description

A0 to A16

I/O1 to I/O8

CE1, CE2

Vcc

GND

Address input

Data input output

Chip enable 1, 2 input

Write enable input

Output enable input

Power supply

Ground

No connection

Symbol

Description

Absolute Maximum Ratings

(Ta = 25°C, GND = 0V)

Item

Symbol

Rating

Unit

Supply voltage

Input voltage

Input and output voltage

Allowable power dissipation

Operating temperature

Storage temperature

Soldering temperature

I/O

Topr

Tstg

Tsolder

0.5 to +7.0

0.5

to V

+0.5

0.5

to V

+0.5

1.0

0.7

0 to +70

55 to +150

260 · 10

235 · 10

°C

°C · s

CXK581000

CXK581000ATM/AYM/AM

I/O

= 3.0V Min. for pulse width less than 50ns.

CE1

CE2

Mode

I/O pin

Current

×
×

Not selected

Output disable

Read

Write

High Z

Data out

Data in

Truth Table

: "H" or "L"

DC Recommended Operating Conditions

(Ta = 0 to +70°C, GND = 0V)

Supply voltage

Input high voltage

Input low voltage

4.5

2.2

0.3

5.0

5.5

+0.3

0.8

Item

Symbol

Min.

Typ.

Max.

Unit

= 3.0V Min. for pulse width less than 50ns.

CXK581000AM

CXK581000AP

A15

CE2

A13

A11

A10

CE1

I/O8

I/O7

I/O6

I/O5

I/O4

A16

A14

A12

I/O1

I/O2

I/O3

GND

CXK581000AP

CXK581000ATM/AYM/AM

SB1

, I

SB2

SB1

, I

SB2

CC1

, I

CC2

, I

CC3

CC1

, I

CC2

, I

CC3

CC1

, I

CC2

, I

CC3

CXK581000ATM/AYM/AM/AP

Electrical Characteristics

· DC Characteristics

= 5V ±10%, GND = 0V, Ta = 0 to = +70°C)

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Input leakage current

Output leakage current

Operating power

supply current

Average operating

current

Standby current

Output high

voltage

Output low

voltage

CC1

CC2

CC3

SB1

SB2

= GND to V

CE1 = V

or CE2 = V

or OE = V

or WE = V

, V

I/O

= GND to V

CE1 = V

, CE2 = V

= V

or V

OUT

= 0mA

Min. cycle

55LL/55SL

Duty = 100%

70LL/70SL

OUT

= 0mA

10LL/10SL

Cycle time 1µs
duty = 100%
I

OUT

= 0mA

CE1

0.2V

CE2

0.2V

CE2

0.2V

or CE1

0.2V

{

CE2

0.2V

CE1 = V

or CE2 = V

= 1.0mA

= 2.1mA

2.4

0.4

0.7

0.3

0.6

µA

0 to +70°C

0 to +40°C

+25°C

0 to +70°C

0 to +40°C

+25°C

= 5V, Ta = 25°C

For -55LL/70LL/10LL

For -55SL/70SL/10SL

CXK581000ATM/AYM/AM/AP

I/O Capacitance

(Ta = 25°C, f = 1MHz)

Input capacitance

I/O capacitance

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

I/O

= 0V

I/O

= 0V

Note) This parameter is sampled and is not 100% tested.

Input pulse high level

Input pulse low level

input rise time

input fall time

Input and output reference level

-55LL/55SL

Output load conditions

-70LL/70SL

-10LL/10SL

= 2.2V

= 0.8V

r = 5ns

f = 5ns

1.5V

= 30pF, 1TTL

= 100pF, 1TTL

Item

Conditions

AC Characteristics

· AC test conditions

= 5V±10%, Ta = 0 to +70°C)

includes scope and jig capacitances.

TTL

· Test circuit

CXK581000ATM/AYM/AM/AP

· Read cycle (WE = "H")

Read cycle time

Address access time

Chip enable access time (CE1)

Chip enable access time (CE2)

Output enable to output valid

Output hold from address change

Chip enable to output in low Z (CE1, CE2)

Output enable to output in low Z (OE)

Chip disable to output in high Z (CE1, CE2)

Output disable to output in high Z (OE)

Item

Symbol

-55LL/55SL

-70LL/70SL

-10LL/10SL

Unit

Min.

Max.

Min.

Max.

Min.

Max.

Item

Symbol

-55LL/55SL

-70LL/70SL

-10LL/10SL

Unit

Min.

Max.

Min.

Max.

Min.

Max.

CO1

CO2

LZ1

LZ2

OLZ

HZ1

HZ2

OHZ

100

HZ1

HZ2

and

OHZ

are defined as the time required for outputs to turn to high impedance state and are not

referred to as output voltage levels.

· Write cycle

Write cycle time

Address valid to end of write

Chip enable to end of write

Data to write time overlap

Data hold from write time

Write pulse width

Address setup time

Write recovery time (WE)

Write recovery time (CE1, CE2)

Output active from end of write

Write to output in high Z

WR1

WHZ

100

WHZ

is defined as the time required for outputs to turn to high impedance state and is not referred to as

output voltage level.

CXK581000ATM/AYM/AM/AP

Timing Waveform

· Read cycle (1) : CE1 = OE = V

, CE2 = V

, WE = V

· Read cycle (2) : WE = V

· Write cycle (1) : WE control

WHZ

Data valid

High impedance

Address

CE1

CE2

Data in

Data out

(

OLZ

Data valid

High impedance

Address

CE1

CE2

Data out

CO1

LZ1

LZ2

CO2

HZ1

HZ2

OHZ

Address

Data out

Previous data valid

Data valid

CXK581000ATM/AYM/AM/AP

· Write cycle (2) : CE1 control

· Write cycle (3) : CE2 control

Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.

Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition.

WR1

is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until

the end of the write cycle.

Data valid

High impedance

Address

CE1

CE2

Data in

Data out

WR1

(

WR1

Data valid

High impedance

Address

CE1

CE2

Data in

Data out

(

CXK581000ATM/AYM/AM/AP

Data Retention Waveform

· Low supply voltage data retention waveform (1) : CE1 control

· Low supply voltage data retention waveform (2) : CE2 control

Data Retention Characteristics

(Ta = 0 to +70°C)

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Data retention voltage

Data retention current

Data retention setup

time

Recovery time

CCDR1

CCDR2

CDRS

= 3.0V

2.0

5.5

2.4

1.2

0.8

0.3

0.4

0.15

0.7

0.3

µA

0 to +70°C

0 to +40°C

+25°C

0 to +70°C

0 to +40°C

+25°C

Note)

CE1

0.2V, CE2

0.2V [CE1 Control] or CE2

0.2V [CE2 Control]

For -55LL/70LL/10LL

For -55SL/70SL/10SL

Data retention mode

CDRS

CE2 0.2V

4.5V

CE2

0.4V

GND

Data retention mode

CDRS

CE1 V

0.2V

4.5V

2.2V

CE1

GND

= 2.0V to 5.5V

Chip disable to data retention mode

CXK581000ATM/AYM/AM/AP

Example of Representative Characteristics

1.5

1.25

1.0

0.75

0.5

4.5

4.75

5.25

5.5

Ta = 25°C

CC1

CC2

Supply current vs. Supply voltage

-- Supply voltage (V)

CC1

, I

CC2

-- Supply current (Relative Value)

1.2

1.1

1.0

0.9

0.8

= 5.0V

CC1

CC2

(Write)

Supply current vs. Ambient temperature

Ta -- Ambient temperature (°C)

CC1

, I

CC2

-- Supply current (Relative Value)

CC2

(Read)

1.0

0.8

0.6

0.4

0.2

Write

Supply current vs. Frequency

Frequency (1/t

, 1/t

) (MHz)

CC2

-- Supply current (Relative Value)

Read

100ns

70ns

55ns

= 5.0V

Ta = 25°C

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

100

200

300

400

= 5.0V

Ta = 25°C

, T

CO1,

CO2

Access time vs. Load capacitance

-- Load capacity (pF)

, T

CO1

, T

CO2

, T

-- Access time (Relative Value)

1.4

1.2

1.0

0.8

0.6

4.5

4.75

5.25

5.5

Ta = 25°C

, T

CO1

, T

CO2

Access time vs. Supply voltage

-- Supply voltage (V)

, T

CO1

, T

CO2

, T

-- Access time (Relative Value)

1.4

1.2

1.0

0.8

0.6

= 5.0V

CO1

, T

CO2

, T

Access time vs. Ambient temperature

Ta -- Ambient temperature (°C)

, T

CO1

, T

CO2

, T

-- Access time (Relative Value)

CXK581000ATM/AYM/AM/AP

2.0

1.5

1.0

0.5

2.0

3.0

4.0

5.0

6.0

Ta = 25°C

SB2

SB1

Standby current vs. Supply voltage

-- Supply voltage (V)

SB1

, I

SB2

-- Standby current (Relative value)

0.5

0.2

= 5.0V

Standby current vs. Ambient temperature

Ta -- Ambient temperature (°C)

SB1

-- Standby current (Relative value)

1.2

1.1

1.0

0.9

0.8

4.5

4.75

5.25

5.5

Ta = 25°C

, V

Input voltage level vs. Supply voltage

-- Supply voltage (V)

, V

-- Input voltage (Relative value)

1.4

1.2

1.0

0.8

0.6

Standby current vs. Ambient temperature

Ta -- Ambient temperature (°C)

SB2

-- Standby current (Relative value)

= 5.0V

1.4

1.2

1.0

0.8

0.6

Output high current vs. Output high voltage

-- Output high voltage (V)

-- Output high current (Relative value)

= 5.0V

Ta = 25°C

1.8

1.4

1.0

0.6

0.2

0.4

0.6

0.8

Output low current vs. Output low voltage

-- Output low voltage (V)

-- Output low current (Relative value)

= 5.0V

Ta = 25°C

CXK581000ATM/AYM/AM/AP

Package Outline

Unit: mm

CXK581000ATM

CXK581000AYM

SONY CODE

EIAJ CODE

JEDEC CODE

TSOP (

) -32P-L01

TSOP (

) 032-P-0820-A

PACKAGE STRUCTURE

PACKAGE MATERIAL

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

42 ALLOY

SOLDER PLATING

EPOXY / PHENOL RESIN

0° to 10°

32PIN TSOP (

) (PLASTIC)

8.0 ± 0.2

0.2 0.03

+ 0.08

0.5

0.127 0.02

+ 0.05

0.1 ± 0.1

0.5 ±

0.1

1.07 0.1

+ 0.2

18.4 ±

0.2

20.0 ±

0.2

DETAIL A

0.1

0.08

NOTE: Dimension "

" does not include mold protrusion.

SONY CODE

EIAJ CODE

JEDEC CODE

PACKAGE STRUCTURE

PACKAGE MATERIAL

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

EPOXY RESIN

SOLDER PLATING

42 ALLOY

TSOP-32P-L01R

TSOP032-P-0820-B

32PIN TSOP (PLASTIC)

0.08

0.5

0.2 0.03

+ 0.08

8.0 ± 0.2

18.4 ±

0.2

20.0 ±

0.2

1.07 0.1

+ 0.2

0.127 0.02

+ 0.05

0.1 ± 0.1

0.5 ±

0.1

0° to 10°

0.1

DETAIL A

0.3g

NOTE: Dimension "

" does not include mold protrusion.

CXK581000ATM/AYM/AM/AP

CXK581000AM

CXK581000AP

PACKAGE STRUCTURE

PACKAGE MATERIAL

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

SONY CODE

EIAJ CODE

JEDEC CODE

SOP-32P-L02

SOP032-P-0525-A

EPOXY / PHENOL RESIN

SOLDER PLATING

42 ALLOY

32PIN SOP (PLASTIC) 525mil

20.5 0.1

+ 0.4

0.4 ± 0.1

1.27

+ 0.3

11.2 0.1

14.0 ±

0.4

2.9 0.25

+ 0.15

11.9

0.15 0.05

+ 0.1

0.2 ± 0.1

0.8 ±

0.2

0° to 10°

DETAIL A

0.1

0.12

PACKAGE STRUCTURE

PACKAGE MATERIAL

LEAD TREATMENT

LEAD MATERIAL

PACKAGE WEIGHT

SONY CODE

EIAJ CODE

JEDEC CODE

DIP-32P-01

DIP32-P-0600-A

EPOXY / PHENOL RESIN

SOLDER PLATING

42 ALLOY

4.5g

32PIN DIP (PLASTIC) 600mil

40.2 0.1

+ 0.4

2.54

15.24

0.5 ± 0.1

1.2 ± 0.15

3.0 MIN

0.5 MIN

0° to 15°

4.6 0.1

+ 0.4

13.5 0.1

+ 0.3

0.25 0.05

+ 0.1

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: CXK581000AM-55LL

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: CXK581000AM-55LL