1
CXK5B18120TM
-12
E93585A57-PK
65536-word
18-bit High Speed Bi-CMOS Static RAM
Description
CXK5B18120TM is a high speed 1M bit Bi-
CMOS static RAM organized as 65536 words by
18 bits. Operating on a single 3.3V supply this
asynchronous IC is suitable for use in high speed
and low power applications.
Features
Single 3.3V Supply
3.3V0.3V
Fast access time
12ns (Max.)
Low stand-by current:
10mA (Max.)
Low power operation 1116mW (Max.)
Package line-up
Dual Vcc/Vss
CXK5B18120TM
400mil 44pin TSOP Package
Function
65536-word
18-bit static RAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
44 pin TSOP (Plastic)
Block Diagram
Pin Description
Buffer
A5
A4
A3
A0
A2
A1
A6
Buffer
Row
Decoder
Memory
Matrix
256
4608
I/O
Buffer
Vcc
GND
A14
A15
A9
A8
A12
A13
A11
A10
WE
OE
CE
1
2
3
4
5
6
7
8
9
1
0
11
12
13
14
15
16
I/O Gate
Column
Decoder
A7
LB
UB
17
18
19
20
21
22
28
27
26
25
24
23
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
Vcc
GND
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O18
I/O17
I/O16
I/O15
GND
Vcc
I/O14
I/O13
I/O12
I/O11
NC
A8
A9
A10
A11
I/O1 I/O18
I/O9
I/O10
Symbol
A0 to A15
I/O1
to I/O9
I/O10
to I/O18
CE
WE
OE
LB
UB
Vcc
GND
NC
Address input
Data input output
(lower byte I/O)
Data input output
(upper byte I/O)
Chip enable input
Write enable input
Output enable input
Lower byte select input
Upper byte select input
+3.3V Power supply
Ground
No connection
Description
Pin configuration
(Top View)
For the availability of this product, please contact the sales office.
2
CXK5B18120TM
V
CC
V
IN
V
I/O
P
D
Topr
Tstg
Tsolder
0.5
1
to +4.6
0.5
1
to V
CC
+ 0.5
0.5
1
to V
CC
+ 0.5
1.5
2
0 to +70
55 to +150
235 10
V
V
V
W
C
C
C sec
Item
Symbol
Rating
Unit
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
Typ.
Max.
Unit
V
CC
V
IH
V
IL
3.0
2.0
0.3
3.3
--
--
3.6
V
CC
+ 0.3
0.8
V
V
V
Absolute Maximum Ratings
(Ta = 25C, GND = 0V)
Truth Table
CE
H
L
L
L
L
L
H
H
L
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
Not selected
Read
Read
Read
Not selected
Write
Write
Write
Output disable
Not selected
High Z
Data Out
Data Out
High Z
High Z
Data in
Data in
High Z
High Z
High Z
High Z
Data out
High Z
Data out
High Z
Data in
High Z
Data in
High Z
High Z
I
SB1
, I
SB2
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
OE
WE
LB
UB
Mode
I/O1 to I/O9
I/O10 to I/O18
Current
Recommended Operating Conditions
(Ta = 0 to +70C, GND = 0V)
: "H" or "L"
V
IL
= 2.0V Min. for pulse width less than 5ns
1 Vcc, V
IN
, V
I/O
= 2.0V Min. for pulse width less than 5ns
2 Air Flow
1m/s
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature time
3
CXK5B18120TM
Electrical Characteristics
DC Characteristics
(Vcc = 3.3V0.3V, GND = 0V, Ta = 0 to +70C)
Item
Symbol
Conditions
V
IN
= GND to Vcc
CE = V
IH
or OE = V
IH
or WE = V
IL
or
UB = V
IH
or LB = V
IH
V
I/O
= GND to Vcc
Min. Cycle
Duty =100%
I
OUT
= 0mA, CE = V
IL
, V
IN
= V
IH
or V
IL
CE
Vcc 0.2V
V
IN
Vcc 0.2V or V
IN
0.2V
Min. Cycle
Duty =100%
CE = V
IH
, V
IN
= V
IH
or V
IL
I
OH
= 2.0mA
I
OL
= 2.0mA
10
10
--
--
--
2.4
--
--
--
--
--
--
--
--
+10
+10
310
10
100
--
0.4
A
A
mA
mA
mA
V
V
Input leakage current
Output leakage current
Average operating
current
Standby current
Output high voltage
Output low voltage
I
LI
I
LO
I
CC
I
SB1
I
SB2
V
OH
V
OL
Min.
Typ.
Max.
Unit
*
Vcc = 3.3V, Ta = 25C
I/O Capacitance
(Ta = 25C, f = 1MHz)
Item
Input capacitance
I/O capacitance
C
IN
C
I/O
V
IN
= 0V
V
I/O
= 0V
--
--
--
--
5
7
pF
pF
Symbol
Conditions
Min.
Typ.
Max.
Unit
AC Characteristics
AC test condition
(Vcc = 3.3V0.3V, Ta = 0 to +70C)
Item
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
V
IH
= 3.0V
V
IL
= 0.0V
t
r = 2ns
t
f = 2ns
1.4V
Fig. 1
Condition
I/O
Zo=50
R
L
=50
V
L
=1.4V
I/O
3.3V
1179
868
5pF*
2
Output load (1)
Output load (2)*
1
*1.
For t
LZ
, t
OLZ
, t
LBLZ
, t
UBLZ
, t
HZ
, t
OHZ
, t
LBHZ
, t
UBHZ
, t
OW
, t
WHZ
*2.
Including scope and jig capacitances.
Fig. 1
Note) This parameter is sampled and is not 100% tested.
4
CXK5B18120TM
Read cycle
Item
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Byte select to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte select to output in low Z (LB, UB)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Byte select to output in high Z (LB, UB)
12
--
--
--
--
3
3
0
0
0
0
0
--
12
12
6
6
--
--
--
--
6
6
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
CO
t
OE
t
LB
C
t
UB
t
OH
t
LZ
t
OLZ
t
LBLZ
,
t
UBLZ
t
HZ
t
OHZ
t
LBHZ
,
t
UBHZ
Symbol
-12
Min.
Max.
Unit
Write cycle
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte select to end of write
Data valid to end to write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from end of write
Write to output in high Z
12
10
10
10
8
0
10
0
0
4
0
--
--
--
--
--
--
--
--
--
--
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
AW
t
CW
t
LBW
,
t
UBW
t
DW
t
DH
t
WP
t
AS
t
WR
t
OW
t
WHZ
Symbol
-12
Min.
Max.
Unit
Transition is measured 200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
Transition is measured 200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
5
CXK5B18120TM
Timing Waveform
Read cycle (1) : CE = OE = V
IL
, WE = V
IH
Address
t
AA
t
RC
t
OH
Data out
Previous data valid
Data valid
Read cycle (2) : WE = V
IH
Address
t
AA
t
RC
t
CO
t
LZ
t
HZ
t
OHZ
t
O
E
t
OLZ
CE
OE
Data out
High impedance
Data
valid
t
LB
t
U
B
LB, UB
t
LBL
Z
t
UBL
Z
t
LBH
Z
t
UBH
Z
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