1
CXK5T81000ATM/AYM/AM
-10LLX/12LLX
PE96324-ST
131072-word
8-bit High Speed CMOS Static RAM
Description
The CXK5T81000ATM/AYM/AM is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATM/AYM/AM is a suitable RAM
for portable equipment with battery back up.
Features
Extended operating temperature range:
25 to +85C
Wide supply voltage range operation: 2.7 to 3.6V
Fast access time:
(Access time)
3.0V operation -10LLX
100ns
(Max.)
-12LLX
120ns
(Max.)
3.3V operation -10LLX
85ns
(Max.)
-12LLX
100ns
(Max.)
Low standby current:
28A
(Max.)
Low data retention current: 24A
(Max.)
Low voltage data retention:
2.0V
(Min.)
Package line-up
CXK5T81000ATM/AYM
8mm
20mm 32 pin TSOP package
CXK5T81000AM
525mil 32 pin SOP package
Function
131072-word
8-bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK5T81000ATM
32 pin TSOP (Plastic)
CXK5T81000AYM
32 pin TSOP (Plastic)
CXK5T81000AM
32 pin SOP (Plastic)
V
CC
GND
CE1
CE2
Row
Decoder
Buffer
I/O Buffer
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
A3
A0
OE
WE
I/O Gate
Column
Decoder
Memory
Matrix
1024
1024
A1
A2
I/O1
I/O8
Buffer
Buffer
Block Diagram
Preliminary
For the availability of this product, please contact the sales office.
2
CXK5T81000ATM/AYM/AM
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection
Symbol
Description
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature time
V
CC
V
IN
V
I/O
P
D
Topr
Tstg
Tsolder
0.5 to +4.6
0.5
1
to V
CC
+ 0.5
0.5
1
to V
CC
+ 0.5
0.7
25 to +85
55 to +150
235 10
V
V
V
W
C
C
C s
Item
Symbol
Rating
Unit
Absolute Maximum Ratings
(Ta = 25C, GND = 0V)
1
V
IN
, V
I/O
= 3.0V Min. for pulse width less than 50ns.
Pin Description
A0 to A16
I/O1 to I/O8
CE1, CE2
WE
OE
V
CC
GND
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
32
31
17
CXK5T81000ATM
(Standard Pinout)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
32
31
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
CXK5T81000AM
CXK5T81000AYM
(Mirror Image Pinout)
A11
A9
A8
A13
WE
CE2
A15
V
CC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
A16
NC
V
CC
A15
CE2
WE
A13
A8
A9
A11
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
V
CC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
Pin Configuration (Top View)
H
L
L
L
L
H
H
H
H
L
H
H
L
Not selected
Not selected
Output disable
Read
Write
High Z
High Z
High Z
Data out
Data in
I
SB1
, I
SB2
I
SB1
, I
SB2
I
CC1
, I
CC2
, I
CC3
I
CC1
, I
CC2
, I
CC3
I
CC1
, I
CC2
, I
CC3
CE1 CE2
OE
WE
Mode
I/O pin
V
CC
Current
Truth Table
: "H" or "L"
3
CXK5T81000ATM/AYM/AM
DC Recommended Operating Conditions
(Ta = 25 to +85C, GND = 0V)
1
V
IL
= 3.0V Min. for pulse width less than 50ns.
Input leakage current
Output leakage current
Operating power supply
current
I
LI
I
LO
I
CC1
V
IN
= GND to V
CC
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
10LLX
12LLX
25 to +85C
25 to +70C
+25C
1
1
--
--
--
--
5
10
--
--
--
--
--
--
0.48
0.12
28
14
--
1.4
A
mA
--
--
1
25
2
25
+1
+1
3
35
3
35
A
A
mA
mA
mA
Item
Symbol
Min.
Typ.
1
Max.
Unit
Test conditions
Electrical Characteristics
DC Characteristics
(V
CC
= 2.7 to 3.6V, GND = 0V, Ta = 25 to +85C)
1
V
CC
= 3.3V, Ta = 25C
2
I
CC2
= 30mA for 3.3V operation (V
CC
= 3.3V 0.3V)
3
I
CC2
= 40mA for 3.3V operation (V
CC
= 3.3V 0.3V)
Average operating current
Output high voltage
Output low voltage
Standby current
I
CC2
I
CC3
I
SB1
I
SB2
V
OH
V
OL
Min. cycle
duty = 100%
I
OUT
= 0mA
Cycle time 1s
duty = 100%
I
OUT
= 0mA
CE1
0.2V
CE2
Vcc 0.2V
V
IL
0.2V
V
IH
Vcc 0.2V
CE1 = V
IH
or CE2 = V
IL
I
OL
= 2.0mA
2.4
--
--
--
--
0.4
V
V
I
OH
= 2.0mA
CE2
0.2V
CE1
Vcc 0.2V
or
{
CE2
Vcc 0.2V
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
Typ.
Max.
Unit
V
CC
V
IH
V
IL
2.7
2.4
0.3
1
3.3
--
--
3.6
V
CC
+ 0.3
0.4
Min.
Typ.
Max.
3.0
2.2
0.3
1
3.3
--
--
3.6
V
CC
+ 0.3
0.6
V
4
CXK5T81000ATM/AYM/AM
Input capacitance
I/O capacitance
Item
Symbol Test conditions
Min.
Typ.
Max.
Unit
C
IN
C
I/O
--
--
--
--
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
AC Characteristics
AC test conditions
(Ta = 25 to +85C)
I/O capacitance
(Ta = 25C, f = 1MHz)
Note) This parameter is sampled and is not 100% tested.
TTL
C
L
Test circuit
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
-10LLX
Output load conditions
-12LLX
V
IH
= 2.4V
V
IL
= 0.4V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 100pF, 1TTL
C
L
1
= 100pF, 1TTL
Item
V
CC
= 2.7 to 3.6V
Conditions
V
IH
= 2.2V
V
IL
= 0.6V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 30pF, 1TTL
C
L
1
= 100pF, 1TTL
V
CC
= 3.3V 0.3V
1
C
L
includes scope and jig capacitances.
5
CXK5T81000ATM/AYM/AM
Read cycle (WE = "H")
1
t
HZ1
, t
HZ2
and t
OHZ
are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
2
t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.
Write cycle
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
-12LLX
Unit
t
RC
t
AA
t
CO1
t
CO2
t
OE
t
OH
t
LZ1
t
LZ2
t
OLZ
t
HZ1
1
t
HZ2
1
t
OHZ
1
100
--
--
--
--
10
10
5
--
--
--
100
100
100
50
--
--
--
40
35
120
--
--
--
--
10
10
5
--
--
--
120
120
120
60
--
--
--
40
35
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
--
--
--
--
10
10
5
--
--
--
85
85
85
40
--
--
--
35
30
100
--
--
--
--
10
10
5
--
--
--
100
100
100
50
--
--
--
40
35
Read cycle time
Address access time
Chip enable access time (CE1)
Chip enable access time (CE2)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z
(CE1, CE2)
Output enable to output in low Z (OE)
Chip disable to output in high Z
(CE1, CE2)
Output disable to output in high Z (OE)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
-12LLX
Unit
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
2
100
80
80
40
0
70
0
0
0
5
--
--
--
--
--
--
--
--
--
--
--
40
120
100
100
50
0
70
0
0
0
5
--
--
--
--
--
--
--
--
--
--
--
40
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
70
70
35
0
60
0
0
0
5
--
--
--
--
--
--
--
--
--
--
--
35
100
80
80
40
0
70
0
0
0
5
--
--
--
--
--
--
--
--
--
--
--
40
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE1, CE2)
Output active from end of write
Write to output in high Z
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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