1
CXK5T8257BTM/BYM/BM
-10LLX/12LLX
PE96509-ST
32768-word
8-bit High Speed CMOS Static RAM
Description
The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
by 8 bits.
Special feature are low power consumption and
high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
Extended operating temperature range: 25 to +85C
Wide supply voltage range operation: 2.7 to 3.6V
Fast access time:
(Access time)
3.0V operation
-10LLX
100ns (Max.)
-12LLX
120ns (Max.)
3.3V operation
-10LLX
85ns (Max.)
-12LLX
100ns (Max.)
Low standby current: 7.0A (Max.)
Low power data retention: 2.0V (Min.)
Available in many packages
CXK5T8257BTM/BYM
8mm
13.4mm 28 pin TSOP Package
CXK5T8257BM
450mil 28 pin SOP Package
Function
32768-word
8 bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK5T8257BTM
28 pin TSOP (Plastic)
CXK5T8257BYM
28 pin TSOP (Plastic)
CXK5T8257BM
28 pin SOP (Plastic)
Memory
Matrix
512
512
I/O Gate
Column
Decoder
Row
Decoder
Buffer
Buffer
Buffer
I/O Buffer
V
CC
GND
I/O1
I/O8
A14
A13
A12
A11
A9
A8
A7
A6
A5
A10
A4
A3
A2
A1
A0
OE
WE
CE
Block Diagram
Preliminary
For the availability of this product, please contact the sales office.
2
CXK5T8257BTM/BYM/BM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
CC
WE
A13
A8
A9
A11
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
CXK5T8257BM
A11
A9
A8
A13
WE
V
CC
A14
A12
A7
A6
A5
A4
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
CXK5T8257BTM
(Standard Pinout)
A4
A5
A6
A7
A12
A14
V
CC
WE
A13
A8
A9
A11
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
I/O4
I/O5
I/O6
I/O7
I/O8
CE
A10
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
CXK5T8257BYM
(Standard Pinout)
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
Power supply
Ground
A0 to A14
I/O1 to I/O8
CE
WE
OE
V
CC
GND
Symbol
Description
Pin Description
Pin Configuration (Top View)
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature time
V
CC
V
IN
V
I/O
P
D
Topr
Tstg
Tsolder
0.5 to +4.6
0.5
1
to V
CC
+ 0.5
0.5
1
to V
CC
+ 0.5
0.7
25 to +85
55 to +150
235 10
V
V
V
W
C
C
C s
Item
Symbol
Rating
Unit
H
L
L
L
H
L
H
H
L
Not selected
Output disable
Read
Write
High Z
High Z
Data out
Data in
I
SB1
, I
SB2
I
CC1
, I
CC2
I
CC1
, I
CC2
I
CC1
, I
CC2
CE
OE
WE
Mode
I/O1 to I/O8
V
CC
Current
Absolute Maximum Ratings
(Ta = 25C, GND = 0V)
1
V
IN
, V
I/O
= 3.0V Min. for pulse width less than 50ns.
Truth Table
: "H" or "L"
3
CXK5T8257BTM/BYM/BM
Electrical Characteristics
DC characteristics
(V
CC
= 2.7 to 3.6V, GND = 0V, Ta = 25 to +85C)
Item
Symbol
Test Conditions
Min.
Typ.
2
Max.
Unit
Input leakage current
Output leakage
current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
I
LI
I
LO
I
CC1
I
CC2
I
SB1
I
SB2
V
OH
V
OL
V
IN
= GND to V
CC
CE = V
IH
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE = V
IL
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
Min. cycle
duty = 100%, I
OUT
= 0mA
CE
V
CC
0.2V
CE = V
IH
I
OH
= 2mA
I
OL
= 2.0mA
0.5
0.5
--
--
--
--
--
--
--
2.4
--
0.5
0.5
2
35
4
35
7.0
3.5
--
0.7
--
0.4
--
--
0.9
18
3
18
--
--
0.12
0.06
--
--
A
mA
A
mA
V
2
V
CC
= 3.3V, Ta = 25C
3
I
CC2
= 21mA for 3.3V operation (V
CC
= 3.3V 0.3V)
4
I
CC3
= 40mA for 3.3V operation (V
CC
= 3.3V 0.3V)
10LLX
12LLX
25 to +85C
25 to +70C
+25C
DC Recommended Operating Conditions
(Ta = 25 to +85C, GND = 0V)
1
V
IL
=3.0V Min. for pulse width less than 50ns.
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
Typ.
Max.
Unit
V
CC
V
IH
V
IL
2.7
2.4
0.3
1
3.3
--
--
3.6
V
CC
+ 0.3
0.4
Min.
Typ.
Max.
3.0
2.2
0.3
1
3.3
--
--
3.6
V
CC
+ 0.3
0.6
V
4
CXK5T8257BTM/BYM/BM
Input capacitance
I/O capacitance
Item
Symbol Test condition
Min.
Typ.
Max.
Unit
C
IN
C
I/O
--
--
--
--
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
TTL
C
L
AC Characteristics
AC test conditions
(Ta = 25 to +85C)
1
C
L
includes scope and jig capacitances.
I/O capacitance
(Ta = 25C, f = 1MHz)
Note) This parameter is sampled and is not 100% tested.
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
V
IH
= 2.4V
V
IL
= 0.4V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 100pF, 1TTL
C
L
1
= 100pF, 1TTL
Item
V
CC
= 2.7 to 3.6V
Conditions
V
IH
= 2.2V
V
IL
= 0.6V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 30pF, 1TTL
C
L
1
= 100pF, 1TTL
V
CC
= 3.3V 0.3V
-10LLX
-12LLX
5
CXK5T8257BTM/BYM/BM
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
-12LLX
Unit
t
RC
t
AA
t
CO
t
OE
t
OH
t
LZ
t
OLZ
t
HZ
1
t
OHZ
1
100
--
--
--
20
10
10
--
--
--
100
100
50
--
--
--
35
35
120
--
--
--
20
10
10
--
--
--
120
120
60
--
--
--
40
35
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
--
--
--
20
10
10
--
--
--
85
85
50
--
--
--
35
35
100
--
--
--
20
10
10
--
--
--
100
100
50
--
--
--
35
35
Read cycle time
Address access time
Chip enable access time (CE)
Chip enable to output valid
Chip hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Read cycle (WE = "H")
1
t
HZ
and
t
OHZ
are defined as the time required for outputs to turn to high impedance state and are not referred
to as output voltage levels.
2
t
WHZ
is defined as the time requied for outputs to turn to high impedance state and is not referred to as
output voltage level.
Write cycle
ns
Item
Symbol
Min.
Max.
Min.
Max.
-10LLX
V
CC
= 2.7 to 3.6V
V
CC
= 3.3V 0.3V
-12LLX
Unit
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
2
100
80
80
35
0
60
0
0
0
10
--
--
--
--
--
--
--
--
--
--
--
35
120
100
100
50
0
70
0
0
0
10
--
--
--
--
--
--
--
--
--
--
--
40
Min.
Max.
Min.
Max.
-10LLX
-12LLX
85
80
80
35
0
60
0
0
0
10
--
--
--
--
--
--
--
--
--
--
--
35
100
80
80
35
0
60
0
0
0
10
--
--
--
--
--
--
--
--
--
--
--
35
ns
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