1
CXK5V8512TM
-85LLX/10LLX
E95716-PP
65536-word
8-bit High Speed CMOS Static RAM
Description
The CXK5V8512TM is a high speed CMOS static
RAM organized as 65536-words by 8-bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V8512TM is a suitable RAM for portable
equipment with battery back up.
Features
Extended operating temperature range:
25 to +85C
Fast access time:
(Access time)
-85LLX
85ns (Max.)
-10LLX
100ns (Max.)
Low standby current:
14A (Max.)
Low data retention current: 12A (Max.)
Single 3.3V supply:
3.3V 0.3V
Low voltage data retention: 2.0V
(Min.)
Package
8mm
20mm 32 pin TSOP package
Function
65536-word
8-bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
32 pin TSOP (Plastic)
V
CC
GND
CE1
CE2
Row
Decoder
Buffer
Buffer
I/O Buffer
A15
A13
A8
A11
A9
A7
A6
A5
A14
A12
A4
A3
A10
A0
A1
OE
WE
Buffer
I/O Gate
Column
Decoder
Memory
Matrix
1024
512
A2
I/O1
I/O8
Block Diagram
For the availability of this product, please contact the sales office.
2
CXK5V8512TM
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection
Symbol
Description
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature time
V
CC
V
IN
V
I/O
P
D
Topr
Tstg
Tsolder
0.5 to +4.6
0.5
to V
CC
+ 0.5
0.5
to V
CC
+ 0.5
0.7
25 to +85
55 to +150
235 10
V
V
V
W
C
C
C s
Item
Symbol
Rating
Unit
Absolute Maximum Ratings
(Ta = 25C, GND = 0V)
V
IN
, V
I/O
= 3.0V Min. for pulse width less than 50ns.
Pin Description
A0 to A15
I/O1 to I/O8
CE1, CE2
WE
OE
V
CC
GND
NC
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
18
19
20
21
22
23
24
25
26
27
28
29
30
32
A11
A9
A8
A13
WE
CE2
A15
Vcc
NC
NC
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
31
17
CXK5V8512TM
Pin Configuration (Top View)
H
L
L
L
L
H
H
H
H
L
H
H
L
Not selected
Not selected
Output disable
Read
Write
High Z
High Z
High Z
Data out
Data in
I
SB1
, I
SB2
I
SB1
, I
SB2
I
CC1
, I
CC2
, I
CC3
I
CC1
, I
CC2
, I
CC3
I
CC1
, I
CC2
, I
CC3
CE1 CE2
OE
WE
Mode
I/O pin
V
CC
Current
Truth Table
: "H" or "L"
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
Typ.
Max.
Unit
V
CC
V
IH
V
IL
3.0
2.2
0.3
3.3
--
--
3.6
V
CC
+ 0.3
0.6
V
V
V
DC Recommended Operating Conditions
(Ta = 25 to +85C, GND = 0V)
V
IL
= 3.0V Min. for pulse width less than 50ns.
3
CXK5V8512TM
Input leakage current
Output leakage current
Operating power supply
current
I
LI
I
LO
I
CC1
V
IN
= GND to V
CC
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
85LLX
10LLX
25 to +85C
25 to +70C
+25C
1
1
--
--
--
--
5
10
--
--
--
--
--
--
0.24
0.12
14
7
--
1.4
A
mA
--
--
1
30
25
+1
+1
3
40
35
A
A
mA
mA
mA
Item
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Electrical Characteristics
DC Characteristics
(V
CC
= 3.3V 0.3V, GND = 0V, Ta = 25 to +85C)
V
CC
= 3.3V, Ta = 25C
Average operating current
Output high voltage
Output low voltage
Standby current
I
CC2
I
CC3
I
SB1
I
SB2
V
OH
V
OL
Min. cycle
duty = 100%
I
OUT
= 0mA
Cycle time 1s
duty = 100%
I
OUT
= 0mA
CE1
0.2V
CE2
Vcc 0.2V
V
IL
0.2V
V
IH
Vcc 0.2V
CE1 = V
IH
or CE2 = V
IL
I
OL
= 2.0mA
2.4
--
--
--
--
0.4
V
V
I
OH
= 2.0mA
CE2
0.2V
CE1
Vcc 0.2V
or
{
CE2
Vcc 0.2V
4
CXK5V8512TM
Input capacitance
I/O capacitance
Item
Symbol Test conditons
Min.
Typ.
Max.
Unit
C
IN
C
I/O
--
--
--
--
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
-85LLX
Output load conditions
-10LLX
V
IH
= 2.2V
V
IL
= 0.6V
t
r = 5ns
t
f = 5ns
1.4V
C
L
= 30pF, 1TTL
C
L
= 100pF, 1TTL
Item
Conditions
AC Characteristics
AC test conditions
(V
CC
= 3.3V 0.3V, Ta = 25 to +85C)
C
L
includes scope and jig capacitances.
I/O capacitance
(Ta = 25C, f = 1MHz)
Note) This parameter is sampled and is not 100% tested.
TTL
C
L
Test circuit
5
CXK5V8512TM
Item
Symbol
Min.
Max.
Min.
Max.
-85LLX
-10LLX
Unit
t
RC
t
AA
t
CO1
t
CO2
t
OE
t
OH
t
LZ1
,
t
LZ2
t
OLZ
t
HZ1
,
t
HZ2
t
OHZ
85
--
--
--
--
10
10
5
--
--
--
85
85
85
40
--
--
--
35
30
100
--
--
--
--
10
10
5
--
--
--
100
100
100
50
--
--
--
40
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time (CE1)
Chip enable access time (CE2)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE1, CE2)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE1, CE2)
Output disable to output in high Z (OE)
Read cycle (WE = "H")
t
HZ1
, t
HZ2
and t
OHZ
are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.
Item
Symbol
Min.
Max.
Min.
Max.
-85LLX
-10LLX
Unit
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
85
70
70
35
0
60
0
5
5
5
--
--
--
--
--
--
--
--
--
--
--
35
100
80
80
40
0
70
0
5
5
5
--
--
--
--
--
--
--
--
--
--
--
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE1, CE2)
Output active from end of write
Write to output in high Z
Write cycle
(Vcc = 3.3V 0.3V, GND = 0V, Ta = 25 to +85C)
(Vcc = 3.3V 0.3V, GND = 0V, Ta = 25 to +85C)
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