--1--
E88Z12C5X-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Description
DM-231 a magnetic sensor using magnetoresist-
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at V
CC
=5 V, H=14400 A/m
Fitted with bias magnet: stable output.
High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
Non-contact angle of rotation detection.
Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 C)
Supply voltage
V
CC
10
V
Storage temperature
Tstg
30 to +100
C
Recommended Operating Conditions
Supply voltage
V
CC
5
V
Operating temperature
Topr
20 to + 75
C
Magnetoresistance Element
M-118 (Plastic)
DM-231
Electrical Characteristics
Ta=25 C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Output voltage
Midpoint potential
Midpoint potential
difference/Output voltage
Total resistance
V
O
V
A
, V
B
|V
A
-V
B
|
V
O
R
T
V
CC
=5 V , H=14400 A/m (Peak)
AC magnetic field
=0
V
CC
=5 V , H=0 A/m
V
CC
=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field
=0
150
2.475
500
650
2.525
15
800
mVp-p
V
%
For the availability of this product, please contact the sales office.
--2--
DM-231
Equivalent Circuit
1
V
CC
R
D
R
A
R
B
R
C
2
3
4
GND
V
B
V
A
Basic Performance
1) Operation principle
Device internal structure
(Back of mark face)
R
A
R
D
1
2
3
4
R
B
R
C
External magnetic field H
Bias magnetic field
H=14400A/m
Synthetic magnetic field (b)
External magnetic field H
Synthetic
magnetic field (a)
Bias magnetic field
1
2
3
4
2) Power supply pin and output pin
3) Sensitivity direction
231
1
3
2
4
1
V
CC
Out put
Differential amplifier
GND
2
4
3
Sensitive
Non-Sensitive
Various resistances change according to the direction of
the combnied bias and external magnetic field.
) When the direction of the synthetic magnetic field is (a),
R
A
,R
C
: Maximum resistance
R
B
,R
D
: Minimum resistance
) When the direction of the synthetic magnetic field is (b),
R
A
,R
C
: Minimum resistance
R
B
,R
D
: Maximum resistance
The ferromagnetic magnetoresistance element differs
from the semiconductor magnetoresistance element and
hole element in that it responds only to the magnetic
field within the element's surface. It is not sensitive to
the magnetic field perpendicular to the element.
--3--
DM-231
Basic Application
Rotation angular detection
Handling precautions
1) Most suitable magnetic
field intensity
When the external magnetic
field is at H=14400A/m,
rotation angle can be
detected most effectively.
Whe the external magnetic field H<14400A/m, output voltage shrinks.
When the external magnetic field H>14400A/m, the detection angle range shrinks.
Whe the external magnetic field H<14400A/m, the detection angle range becomes larger. In regions other
than -90 to +90, the magnetic field combined with the bias magnetic field, shrinks down, which is not
advisable. Also, when the range to be detected is smaller than -90 to +90 it is more advantageous to turn to
H>14400A/m.
2) External magnetic field direction
With regards to the bias magnetic field, usage at other than 90 should be avoided. That causes a decrease
in the combined magnetic field intensity, that is not recommended.
1
Out put
Differential amplifier
2
4
3
N
S
Out put
Magnetic field
angle
90
0
90
231
H
H=14400A/m
Magnetic field angle
231
231
H
H
H
H
1
1
231
Out put
Magnetic field
angle
90
0
90
H
H>14400A/m
H=14400A/m
H<14400A/m
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DM-231
Midpoint potential vs. Magnetic field Intensi ty (1)
0
2.46
V
A
-Midpoint potential (V)
H-Magnetic field intensity (Oe)
2.48
2.50
2.52
2.54
231
GND
V
A
V
CC
GND
V
A
V
CC
V
CC
=5V
4000
8000
12000
16000
H
H
231
Midpoint potential vs. Magnetic field Intensity (2)
0
2.46
V
B
-Midpoint potential (V)
H-Magnetic field intensity (Oe)
2.48
2.50
2.52
2.54
231
GND
V
B
V
CC
GND
V
B
V
CC
V
CC
=5V
4000
8000
12000
16000
H
231
H
Output voltage vs. Magnetic field intensity
0
Vo-Output voltage (mVp-p)
H: Peak intensity of AC magnetic field
V
CC
=5V
50
100
150
200
4000
8000
12000
16000
H-Magnetic field intensity (Oe)
231
GND
V
B
V
CC
V
A
H
Midpoint potential vs. Magnetic field direction
0
2.46
V
A
, V
B
-Midpoint potential (V)
-Magnetic field direction (deg)
2.48
2.50
2.52
2.54
V
A
V
B
45
90
231
H
V
CC
=5V
H=14400A/m
V
A
GND
V
CC
V
B
45
90
Temperature characteristics
--20
Vo-Output voltage (mVp-p)
50
100
150
200
0
20
40
60
Ta-Ambient temperature (C)
R
T
-Total resistance (
)
800
700
600
500
400
R
T
V
O
H=14400A/m
AC Magnetic field
V
CC
=5V
80
--5--
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-118
M-118
2.5 MAX
0.4
22.0
0.3
2.54
0.25
0.15
4.5 0.1
+ 0.4
4.5
0.1
0.2g
Package Outline Unit : mm
DM-231
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