Description
The SGM2016AN is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
Ultra-small package
Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25C)
Drain to source voltage
V
DSX
12
V
Gate 1 to source voltage
V
G1S
5
V
Gate 2 to source voltage
V
G2S
5
V
Drain current
I
D
55
mA
Allowable power dissipation P
D
100
mW
Channel temperature
Tch
125
C
Storage temperature
Tstg
55 to +150
C
1
SGM2016AN
E97939-PS
GaAs N-channel Dual-Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
M-281
For the availability of this product, please contact the sales office.
2
SGM2016AN
0
2
4
6
0
10
20
30
40
V
DS
Drain to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
DS
V
G1S
= 0V
0.6V
0.3V
0.9V
(V
G2S
= 1.5V)
1
3
5
2.0
1.5
1.0
0.5
0
0
10
15
20
25
V
G1S
Gate 1 to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
G1S
(V
DS
= 5V)
1.0V
0.5V
0V
0.5V
5
1.0V
V
G2S
= 1.5V
Typical Characteristics (Ta = 25C)
Electrical Characteristics
(Ta = 25C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 12V
V
G1S
= 4V
V
G2S
= 0V
V
G1S
= 4.5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= 4.5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 900MHz
10
20
17
30
0.9
25
1.2
21
50
8
8
35
2.5
2.5
2.0
40
2.0
A
A
A
mA
V
V
ms
pF
fF
dB
dB
Symbol
Conditions
Min.
Typ.
Max.
Unit
3
SGM2016AN
2.0
1.5
1.0
0.5
0
0
20
30
40
50
V
G1S
Gate 1 to source voltage [V]
g
m
F
o
r
w
a
r
d
t
r
a
n
s
f
e
r
a
d
m
i
t
t
a
n
c
e
[
m
s
]
gm vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
0.5V
10
1.0V
2.0
1.5
1.0
0.5
0
0
10
15
20
25
V
G2S
Gate 2 to source voltage [V]
I
D
D
r
a
i
n
c
u
r
r
e
n
t
[
m
A
]
I
D
vs. V
G2S
(V
DS
= 5V)
V
G1S
= 0V
0.4V
0.6V
1.0V
0.2V
0.8V
5
0
0.8
1.6
2.2
0
1.0
1.5
2.5
3.0
f Frequency [GHz]
N
F
N
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF, Ga vs. f
0.5
0.4
1.2
2.0
2.0
5
15
20
30
35
10
25
G
a
A
s
s
o
c
i
a
t
e
d
g
a
i
n
[
d
B
]
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
Ga
NFmin
0.6
1.4
0.2
1.0
1.8
0
4
8
12
16
20 22
0
1.0
1.5
2.5
3.0
I
D
Drain current [mA]
N
F
N
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF, Ga vs. I
D
(V
DS
= 5V, V
G2S
= 1.5V, f = 900MHz)
0.5
2
6
10
14
2.0
18
0
10
15
25
30
5
20
G
a
A
s
s
o
c
i
a
t
e
d
g
a
i
n
[
d
B
]
Ga
NF
1.0
0.6
0.2
0
0.2
0
2
3
4
5
V
G1S
Gate 1 to source voltage [V]
N
F
N
o
i
s
e
f
i
g
u
r
e
[
d
B
]
NF vs. V
G1S
1
1.2
0.8
0.4
V
G2S
= 0.5V
1.0V
1.5V
(V
DS
= 5V, f = 900MHz)
0.6
0.2
0
0.2
0
10
15
25
30
V
G1S
Gate 1 to source voltage [V]
G
a
A
s
s
o
c
i
a
t
e
d
g
a
i
n
[
d
B
]
Ga vs. V
G1S
5
1.2
0.8
0.4
20
1.0
(V
DS
= 5V, f = 900MHz)
V
G2S
= 1.5V
1.0V
0.5V
4
SGM2016AN
S-parameter vs. Frequency Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
(Z
0
= 50
)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
1.3
3.0
4.2
6.1
7.2
8.8
9.9
11.5
12.8
14.4
15.6
17.2
18.2
20.0
21.3
22.9
24.1
25.8
27.3
28.7
S22
MAG
ANG
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
109.0
113.0
S12
MAG
ANG
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
96.9
91.8
86.6
81.4
76.4
71.5
S21
MAG
ANG
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
3.8
7.9
11.8
16.0
20.0
24.1
27.8
31.3
34.7
38.0
40.9
44.0
46.8
49.7
52.4
54.9
57.5
59.6
61.6
63.4
S11
MAG
ANG
Noise Figure Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
7.5
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
MAG
Rn
(
)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
Gamma Optimum
NFmin
(dB)
ANG
5
SGM2016AN
Package Outline
Unit: mm
SGM2016AN
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
EPOXY RESIN
SOLDER PLATING
COPPER
M-281
0.1g
M-281
2.0 0.2
1.3
(0.65)
(0.65)
(0.65)
(0.6)
0.3 0.05
+ 0.1
0.4 0.05
+ 0.1
0.9 0.1
0 0.1
0.1 0.01
+ 0.1
1.25
1
.
2
5
0
.
1
2
.
1
0
.
2
2
3
4
1
0
.
4
2
5
1 : Source
2 : Gate 1
3 : Gate 2
4 : Drain
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