Description
The SGM2016AM/AP is an N-channel dual-gate
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25C)
Drain to source voltage
V
DSX
12
V
Gate 1 to source voltage
V
G1S
5
V
Gate 2 to source voltage
V
G2S
5
V
Drain current
I
D
55
mA
Allowable power dissipation P
D
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
1
SGM2016AM/AP
E96Y10-PS
GaAs N-channel Dual-Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SGM2016AM
SGM2016AP
For the availability of this product, please contact the sales office.
2
SGM2016AM/AP
0
2
4
6
0
10
20
30
40
V
DS
Drain to source voltage [V]
I
D
Drain current [mA]
I
D
vs. V
DS
V
G1S
= 0V
0.6V
0.3V
0.9V
(V
G2S
= 1.5V)
1
3
5
2.0
1.5
1.0
0.5
0
0
10
15
20
25
V
G1S
Gate 1 to source voltage [V]
I
D
Drain current [mA]
I
D
vs. V
G1S
(V
DS
= 5V)
1.0V
0.5V
0V
0.5V
5
1.0V
V
G2S
= 1.5V
Typical Characteristics (Ta = 25C)
Electrical Characteristics
(Ta = 25C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 12V
V
G1S
= 4V
V
G2S
= 0V
V
G1S
= 4.5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= 4.5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G2S
= 0V
V
DS
= 5V
I
D
= 100A
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 900MHz
10
20
17
30
0.9
25
1.2
21
50
8
8
35
2.5
2.5
2.0
40
2.0
A
A
A
mA
V
V
ms
pF
fF
dB
dB
Symbol
Conditions
Min.
Typ.
Max.
Unit
3
SGM2016AM/AP
2.0
1.5
1.0
0.5
0
0
20
30
40
50
V
G1S
Gate 1 to source voltage [V]
gm Forward transfer admittance [ms]
gm vs. V
G1S
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
0.5V
10
1.0V
2.0
1.5
1.0
0.5
0
0
10
15
20
25
V
G2S
Gate 2 to source voltage [V]
I
D
Drain current [mA]
I
D
vs. V
G2S
(V
DS
= 5V)
V
G1S
= 0V
0.4V
0.6V
1.0V
0.2V
0.8V
5
0
0.8
1.6
2.2
0
1.0
1.5
2.5
3.0
f Frequency [GHz]
NF Noise figure [dB]
NF, Ga vs. f
0.5
0.4
1.2
2.0
2.0
5
15
20
30
35
10
25
Ga Associated gain [dB]
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
Ga
NFmin
0.6
1.4
0.2
1.0
1.8
0
4
8
12
16
20 22
0
1.0
1.5
2.5
3.0
I
D
Drain current [mA]
NF Noise figure [dB]
NF, Ga vs. I
D
(V
DS
= 5V, V
G2S
= 1.5V, f = 900MHz)
0.5
2
6
10
14
2.0
18
0
10
15
25
30
5
20
Ga Associated gain [dB]
Ga
NF
1.0
0.6
0.2
0
0.2
0
2
3
4
5
V
G1S
Gate 1 to source voltage [V]
NF Noise figure [dB]
NF vs. V
G1S
1
1.2
0.8
0.4
V
G2S
= 0.5V
1.0V
1.5V
(V
DS
= 5V, f = 900MHz)
0.6
0.2
0
0.2
0
10
15
25
30
V
G1S
Gate 1 to source voltage [V]
Ga Associated gain [dB]
Ga vs. V
G1S
5
1.2
0.8
0.4
20
1.0
(V
DS
= 5V, f = 900MHz)
V
G2S
= 1.5V
1.0V
0.5V
4
SGM2016AM/AP
S-parameter vs. Frequency Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
(Z
0
= 50
)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
1.3
3.0
4.2
6.1
7.2
8.8
9.9
11.5
12.8
14.4
15.6
17.2
18.2
20.0
21.3
22.9
24.1
25.8
27.3
28.7
S22
MAG
ANG
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
109.0
113.0
S12
MAG
ANG
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
96.9
91.8
86.6
81.4
76.4
71.5
S21
MAG
ANG
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
3.8
7.9
11.8
16.0
20.0
24.1
27.8
31.3
34.7
38.0
40.9
44.0
46.8
49.7
52.4
54.9
57.5
59.6
61.6
63.4
S11
MAG
ANG
Noise Figure Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
7.5
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
MAG
Rn
(
)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
Gamma Optimum
NFmin
(dB)
ANG
5
SGM2016AM/AP
Package Outline
Unit: mm
SGM2016AM
SGM2016AP
M-254
SONY CODE
EIAJ CODE
JEDEC CODE
M-254
PACKAGE MASS
0.01g
2.9 0.2
1.9
( 0.95 )
( 0.95 )
1.1 0.1
+ 0.2
0.6
2.8
0.2
1.6 0.1
+ 0.2
1.8
( 0.85 )
( 0.95 )
0 to 0.1
0.10 0.01
+ 0.1
0.6 0.05
+ 0.1
0.4 0.05
+ 0.1
1
2
3
4
1. Source
2. Gate1
3. Gate2
4. Drain
SONY CODE
EIAJ CODE
JEDEC CODE
M-255
PACKAGE MASS
0.01g
M-255
2.9 0.2
1.9
( 0.95 )
( 0.95 )
1.1 0.1
+ 0.2
0.6
2.8
0.2
1.6 0.1
+ 0.2
1.8
( 0.85 )
( 0.95 )
0 to 0.1
0.10 0.01
+ 0.1
0.6 0.05
+ 0.1
0.4 0.05
+ 0.1
1
2
3
4
1. Source
2. Drain
3. Gate2
4. Gate1
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