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E96Y23-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Optical power output
P
O
5
mV
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +60
C
Storage temperature
Tstg
40 to +85
C
Description
The SLD104AV is a low noise GaAlAs laser diode
developed for CD.
Features
High temperature operation
Low noise
Small package (
5.6 mm)
Applications
Pickup for CD players
Structure
GaAlAs double hetero structured laser diode
Pin photodiode for optical power output monitor
GaAlAs Laser Diode
M-260
SLD104AV
Connection Diagram
Pin Configuration
PD
LD
2
1
3
COMMON
2
1
3
Bottom View
1. LD anode
2. PD anode
3. COMMON
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SLD104AV
Example of Representative Characteristics
10
0
25
50
100
100
50
10
45
Threshold current vs. Temperature characteristics
Tc-Case temperature (C)
Ith-Threshold current (mA)
Far field pattern (FFP)
40
20
0
20
40
1.0
Relative radiant intensity
0.5
0
Angle (degree)
P
O
=3mW
//
PIN diode voltage current characteristics
0.25 (mA)
0.25
0
1.0
Optical power output vs. Forward current characteristics
20
40
60
80
100
5
P
O
-Optical power output
0
I
F
-Forward current (mA)
4
3
2
1
Tc=25C
Tc=50C
Relative radiant intensity
Tc=25C
P
O
=3mW
1.0 (V)
I
V
Relative radiant intensity vs. Wavelength characteristics
P
O
=3mW
778
779
780
781
782
-Wavelength (nm)
Relative radiant intensity
Relative radiant intensity vs. Wavelength characteristics
P
O
=5mW
780
781
782
783
784
-Wavelength (nm)
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