1
SLD1132VS
E94Y01C98-PS
635nm Red Laser Diode
Description
The SLD1132VS is a red laser diode designed for
laser pointers. Its wavelength (635nm typ.) is
shortened by 35nm and visibility is increased by
approximately 7 times, compared to the conven-
tional visible laser diode (670nm typ.).
Features
Short wavelength (635nm typ.)
Small package (
5.6)
Fundamental traverse/single longitudinal mode
Applications
Laser pointers
Structure
AlGaInP quantum well structure laser diode
PIN photo diode for optical power output monitor
Recommended Optical Power Output
3mW
Absolute Maximum Ratings
Optical power output
Po
5
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +40 C
Storage temperature
Tstg
40 to +85 C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
M-274
3
LD
1
2
PD
COMMON
Connection Diagram
Pin Configuration
2
1
3
Bottom View
1. LD cathode
2. PD anode
3. COMMON
2
SLD1132VS
Electrical and Optical Characteristics (Tc = 25C)
Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop
//
X,
Y,
Z
D
As
Imon
Po = 3mW
Po = 3mW
Po = 3mW
Po = 3mW
Po = 3mW
Po = 3mW
| Z // Z
|
Po = 3mW, Vr = 5V
625
24
5
0.15
0.05
50
60
2.4
635
32
7
0.35
0.10
70
80
3.0
645
40
12
80
3
4
0.8
20
0.30
mA
mA
V
nm
degree
degree
m
degree
degree
mW/mA
m
mA
Symbol
Conditions
Min.
Typ.
Max.
Unit
Perpendicular
Parallel
Position
Angle
Handling Precautions
(1) Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS
use safety goggles that block infrared rays.
Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Safety goggles for
protection from laser beam
IR fluorescent plate
Optical
material
Lens
Laser diode
Optical board
Optical power output control device
Temperature control device
(2) Prevention of surge current and electrostatic discharge
Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light
emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that
the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser
diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by
a human body. Be great careful about excess current and electrostatic discharge.
3
SLD1132VS
Example of Representative Characteristics
0.4
0.3
0.2
0.1
200
6
5
4
3
2
1
I
F
Forward current [mA]
Iop Monitor current [mA]
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Angle [degree]
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Far field pattern (FFP)
Tc Case temperature [C]
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Threshold current vs. Temperature characteristics
Tc Case temperature [C]
I
m
M
o
n
i
t
o
r
c
u
r
r
e
n
t
[
m
A
]
Monitor current vs. Temperature characteristics
90
70
60
0
10
30
50
0
0.2
40C
25C
0
IF
25C
20
40
80
T
C
= 0C
40C
T
C
= 0C
Imon
20
0
60
40
20
40
60
Po = 3mW, Tc = 25C
40
30
20
20
10
0
10
50
100
10
40
20
20
0
0
60
60
P
O
= 3mW
PDF 
ZIP
