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Электронный компонент: SLD1133VL

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1
SLD1133VL
E96728A74-PS
650nm Index-Guided Red Laser Diode
Description
The SLD1133VL is an index-guided red laser diode
designed for DVD systems. For bar code scanners,
its wavelength (650nm Typ.) is 20nm shorter than
that of the current device.
Features
Small astigmatism (7m typ.)
Low operating current (60mA typ.)
Small package (
5.6mm)
Single longitudinal mode
Applications
DVD
Bar code scanner
Laser pointer
Structure
AlGaInP quantum well structure laser diode
PIN photo diode for optical power output monitor
Recommended Optical Power Output
5mW
Absolute Maximum Ratings (Tc = 25C)
Optical power output
Po
7
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +60 C
Storage temperature
Tstg
40 to +85 C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
M-274
Pin Configuration
3
LD
1
2
PD
Common
2
1
3
Bottom View
1. LD Anode
2. PD Anode
3. Common
Connection Diagram
2
SLD1133VL
Electrical and Optical Characteristics (Tc = 25C)
Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop


//
X,
Y,
Z
//

D
As
Imon
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW, V
R
= 5V
640
24
6
0.15
0.05
50
60
2.3
650
30
8
0.4
7
0.1
65
70
2.8
660
40
12
80
2
3
0.7
15
0.3
mA
mA
V
nm
degree
degree
m
degree
degree
mW/mA
m
mA
Symbol
Conditions
Min.
Typ.
Max.
Unit
Perpendicular
Parallel
Position
Angle
Handling Precautions
(1) Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 4W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS
use safety goggles that block infrared rays.
Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Safety goggles for
protection from laser beam
IR fluorescent plate
Optical
material
Lens
Laser diode
Optical board
Optical power output control device
Temperature control device
(2) Prevention of surge current and electrostatic discharge
Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light
emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that
the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser
diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by
a human body. Be great careful about excess current and electrostatic discharge.
3
SLD1133VL
Example of Representative Characteristics
100
60
0
I
F
Forward current [mA]
0
0.2
Imon Monitor current [mA]
Po Optical output [mW]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Angle [degree]
Relative radiant intensity
Far field pattern (FFP)
40
20
20
0
60
0.2
Tc Case temperature [C]
Imon Monitor current [mA]
Monitor current vs. Temperature characteristics
0
25C
20
40
80
T
C
= 0C
40C
Imon
30
10
10
50
P
O
= 5mW
70
0.1
0
40
20
20
0
60
200
Tc Case temperature [C]
Ith Threshold current [mA]
Threshold current vs. Temperature characteristics
30
10
10
50
70
100
10
1
2
3
4
5
6
7
60C
25C
T
C
= 0C
40C 60C
20
0
60
40
20
40
60
Po = 5mW, Tc = 25C
//
4
SLD1133VL
Po = 5mW
Tc = 60C
645
650
655
660
665
Wavelength [nm]
Relative radiant intensity
Temperature dependence of spectrum
Tc = 40C
Tc = 25C
Tc = 0C
5
SLD1133VL
Tc = 25C
Po = 7mW
645
650
655
660
665
Wavelength [nm]
Relative radiant intensity
Power output dependence of spectrum
Po = 5mW
Po = 3mW
Po = 1mW
6
SLD1133VL
Package Outline
Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot
1.0
0.5
90
0.4
5.6 0.025
0
4.4 MAX
3.7 MAX
1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0.25
2.6 MAX
1.26
1.2
0.1
6.5
2 3 1
3
0.45
PCD
2.0
Optical
Distance = 1.35 0.08
1
2
3
M-274
PACKAGE WEIGHT
0.3g
M-274