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Электронный компонент: SLD1137VS

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650nm Index-Guided Red Laser Diode
Description
The SLD1137VS is an index-guided red laser diode
for BCS.
Operating current is 25mA lower than SLD1133VS.
Features
Small astigmatism (7m typ.)
Low operating current (35mA typ.)
Small package (
5.6mm)
Single longitudinal mode
Applications
Bar code scanner
Structure
AlGaInP MQW laser diode
PIN photodiode to monitor laser beam output
Recommend Optical Power Output
5mW
Absolute Maximum Ratings (Tc = 25C)
Optical power output
Po
7
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +60
C
Storage temperature
Tstg
40 to +85
C
1
E99202-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD1137VS
M-274
Pin Configuration
3
LD
1
2
PD
Common
2
1
3
Bottom View
1. LD cathode
2. PD anode
3. Common
Connection Diagram
2
SLD1137VS
Electrical and Optical Characteristics (Tc = 25C)
Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop
p

//
X,
Y,
Z
//

D
As
Imon
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW, V
R
= 5V
24
6
0.3
0.05
30
35
2.2
650
30
8
0.5
7
0.1
40
45
2.7
655
40
12
80
3
3
0.8
15
0.5
mA
mA
V
nm
degree
degree
m
degree
degree
mW/mA
m
mA
Symbol
Conditions
Min.
Typ.
Max.
Unit
Perpendicular
Parallel
Position
Angle
3
SLD1137VS
60
40
0
0
0.2
0.2
0
25C
20
T
C
= 0C
40C
Imon
P
O
= 5mW
0.1
0
30
20
60
200
100
10
1
2
3
4
5
6
7
60C
25C
T
C
= 0C
40C 60C
20
0
60
40
20
40
60
Po = 5mW
Tc = 25C
70
I
F
Forward current [mA]
Imon Monitor current [mA]
P
o


O
p
t
i
c
a
l

p
o
w
e
r

o
u
t
p
u
t

[
m
W
]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Angle [degree]
R
e
l
a
t
i
v
e

r
a
d
i
a
n
t

i
n
t
e
n
s
i
t
y
Far field pattern (FFP)
I
m
o
n


M
o
n
i
t
o
r

c
u
r
r
e
n
t

[
m
A
]
Monitor current vs. Temperature characteristics
Tc Case temperature [C]
I
t
h


T
h
r
e
s
h
o
l
d

c
u
r
r
e
n
t

[
m
A
]
Threshold current vs. Temperature characteristics
10
0
20
10
50
40
30
20
60
70
Tc Case temperature [C]
10
0
20
10
50
40
//
Example of Representative Characteristics
4
SLD1137VS
645
650
655
660
665
Tc = 0C
Tc = 25C
Tc = 40C
Tc = 60C
Po = 5mW
Temperature dependence of spectrum
R
e
l
a
t
i
v
e

r
a
d
i
a
n
t

i
n
t
e
n
s
i
t
y
Wavelength [nm]
5
SLD1137VS
645
650
655
660
665
Po = 1mW
Po = 5mW
Po = 7mW
Tc = 25C
Power output dependence of spectrum
R
e
l
a
t
i
v
e

r
a
d
i
a
n
t

i
n
t
e
n
s
i
t
y
Wavelength [nm]
6
SLD1137VS
Package Outline
Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot
1.0
0.5
9
0
0
.
4
5.6 0.025
0
4.4 MAX
3.7 MAX
1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0
.
2
5
2
.
6

M
A
X
1
.
2
6
1
.
2


0
.
1
6
.
5
2 3 1
3
0.45
PCD
2.0
Optical
Distance = 1.35 0.08
1
2
3
M-274
PACKAGE WEIGHT
0.3g
M-274