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Электронный компонент: SLD233VL

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Index-Guided High Power AlGaAs Laser Diode
Description
The SLD233VL is a high power index-guided AlGaAs
laser diode.
Features
Low noise
Low power consumption
Applications
Pickups for MiniDisc recording/playback
Structure
AlGaAs quantum well-structure laser diode
PIN photodiode for optical power output monitor
Recommended Operating Optical Power Output
30mW
Absolute Maximum Ratings (Tc = 25C)
Optical power output
P
O
35
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature Topr
10 to +60
C
Storage temperature
Tstg
40 to +85
C
Connection Diagram
1
E97940-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD233VL
M-274
COMMON
LD
PD
3
2
1
Pin Configuration
2
1
3
Bottom View
1. LD ANODE
2. PD ANODE
3. COMMON
2
SLD233VL
Optical and Electrical Characteristics (Tc = 25C)
Tc: Case temperature
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Coherence
Ith
Iop
Vop


//
X,
Y,
Z

//
D
As
P
O
= 35mW
P
O
= 35mW
P
O
= 35mW
P
O
= 35mW
P
O
= 35mW
P
O
= 30mW
P
O
= 4mW
780
26
7.4
0.55
30
70
2.0
790
28.5
8.5
0.9
16
0.7
40
85
2.5
800
32
10.0
80
3
2
1.2
0.9
mA
mA
V
nm
degree
degree
m
degree
degree
mW/mA
m
Perpendicular
Parallel
Position
Angle
3
SLD233VL
Package Outline
Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot
1.0
0.5
9
0
0
.
4
5.6 0.025
0
4.4 MAX
3.7 MAX
1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0
.
2
5
2
.
6

M
A
X
1
.
2
6
1
.
2


0
.
1
6
.
5
2 3 1
3
0.45
PCD
2.0
Optical
Distance = 1.35 0.08
1
2
3
M-274
PACKAGE WEIGHT
0.3g
M-274