Block-type 100mW High Power Laser Diode
Description
The SLD301B is a high power laser diode mounted on a 3
3
5mm Copper block.
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
Features
Compact size
3
3
5mm block
High power output
Po = 100mW
Hole for thermistor
Applications
Solid state laser excitation
Medical use
Structure
GaAlAs double hetero-type laser diode
Absolute Maximum Ratings (Tc = 25C)
Optical power output
Po
100
mW
Recommended optical power output
Po
90
mW
Reverse voltage
V
R
LD
2
V
Operating temperature
Topr
10 to +50
C
Storage temperature
Tstg
40 to +85
C
Pin Configuration
1
E89103A81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD301B
No.
1
2
Function
LD cathode
LD anode
2 LD anode
1 LD cathode
2
SLD301B
Electrical and Optical Characteristics
(Tc = 25C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Threshold current
Operating current
Operating voltage
Wavelength
Radiation angle
(F. W. H. M.
)
Positional
accuracy
Differential efficiency
Ith
Iop
Vop
p
//
X
Y,
Z
D
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
770
0.5
150
300
1.9
28
12
0.7
200
400
3.0
840
40
17
300
100
3
mA
mA
V
nm
degree
m
degree
mW/mA
Perpendicular to junction
Parallel to junction
Position
Angle
F. W. H. M. : Full Width at Half Maximum
3
SLD301B
Example of Representative Characteristics
Optical power output vs. Forward current
IF Forward current [mA]
0
250
500
0
100
200
P
O
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Tc = 10C
Tc = 0C
Tc = 25C
Tc = 50C
Threshold current vs. Temperature characteristics
Tc Case temperature [C]
10
0
10
20
30
40
50
100
500
1000
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Power dependence of far field pattern
Angle [degree]
30
20
10
0
10
20
30
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Tc = 25C
P
O
= 90mW
P
O
= 60mW
P
O
= 30mW
Power dependence of near field pattern
50m
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Tc = 25C
P
O
= 90mW
P
O
= 75mW
P
O
= 50mW
P
O
= 25mW
Oscillation wavelength vs. Temperature characteristics
Tc Case temperature [C]
10
0
10
20
30
40
50
780
790
830
820
810
800
p
O
s
c
i
l
l
a
t
i
o
n
w
a
v
e
l
e
n
g
t
h
[
n
m
]
P
O
= 90mW
Differential efficiency vs. Temperature characteristics
Tc Case temperature [C]
10
0
50
40
30
20
10
0
0.5
1.0
1.5
D
D
i
f
f
e
r
e
n
t
i
a
l
e
f
f
i
c
i
e
n
c
y
[
m
W
/
m
A
]
(Parallel to junction)
4
SLD301B
Power dependence of polarization ratio
Po Optical power output [mW]
0
20
40
60
80
100
120
0
10
30
20
40
P
o
l
a
r
i
z
a
t
i
o
n
r
a
t
i
o
Tc = 25
C
0.1
0.5
1.0
5.0
10
C
O
D
o
u
t
p
u
t
[
W
]
Pulse width [
s]
0.1
1.0
5.0
0.5
10
50
100
Duty = 10%
T
C
= 23
C
CW
0
1.0
3.0
2.0
1.5
0.5
2.5
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
W
]
Optical power output vs. Operating current
Iop Operating current [A]
0
1.0
2.0
0.5
1.5
2.5
Pulse width = 1
s
Duty = 10%
Tc = 23
C
PULSE
CW
Pulse width dependence of COD
power
COD (Catastrophic Optical Damage)
5
SLD301B
Wavelength [nm]
800
810
805
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 20mW
Wavelength [nm]
800
810
805
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 40mW
Wavelength [nm]
800
810
805
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 80mW
Wavelength [nm]
800
810
805
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 100mW
Wavelength [nm]
800
810
805
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 25
C
Po = 60mW
Power Dependence of Wavelength
6
SLD301B
Wavelength [nm]
805
825
815
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 6
C
Wavelength [nm]
805
825
815
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 12
C
Wavelength [nm]
805
825
815
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 23
C
Wavelength [nm]
805
825
815
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 35
C
Wavelength [nm]
805
825
815
R
e
l
e
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tc = 45
C
Temperature Dependence of Wavelength (P
O
= 90mW)
7
SLD301B
Package Outline
Unit: mm
M 261
5.0 0.1
1.5
for Thermistor
3
.
0
0
.
1
1
.
5
LD Chip
Ceramic
Contact Plate (LD Cathode)
Body (LD Anode)
1.0
1.5
0
.
2
0
.
3
1
.
7
1
.
8
0
.
2
3
.
0
0
.
1
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE STRUCTURE
M-261
PACKAGE WEIGHT
1g
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