100mW High Power Laser Diode
Description
The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
High power
Recommended power output Po = 90mW
Low operating current
Applications
Solid state laser excitation
Medical use
Structure
GaAlAs double-hetero-type laser diode
Absolute Maximum Ratings (Tc = 25C)
Optical power output
Po
100
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +50
C
Storage temperature
Tstg
40 to +85
C
Pin Configuration
1
E88057F81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD301V
2
Bottom View
1. LD cathode
2. PD anode
3. COMMON
1
3
2
SLD301V
Electrical and Optical Characteristics
(Tc: Case temperature, Tc = 25C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollinated
laser diode beams are fairly safe at a laser
diode. Generally speaking, however, it is best
NOT to LOCK into laser beams, under any
circumstances. For observing laser beams,
ALWAYS use safety goggles that block infrared
rays. Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
p
Imon
//
X,
Y
D
Threshold current
Operating current
Operating voltage
Wavelength
1
Monitor current
Radiation angle
(F. W. H. M.
)
Positional accuracy
Differential efficiency
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
V
R
= 10V
P
O
= 90mW
P
O
= 90mW
P
O
= 90mW
770
0.65
150
250
1.9
0.15
28
12
0.9
200
400
3.0
840
40
17
50
3
mA
mA
V
nm
mA
degree
degree
m
degree
mW/mA
Perpendicular
Parallel
Position
Angle
1
Wavelength Selection Classification
Type
SLD301V-1
SLD301V-2
SLD301V-3
Wavelength (nm)
785 15
810 10
830 10
Type
SLD301V-21
SLD301V-24
SLD301V-25
Wavelength (nm)
798 3
807 3
810 3
AP
C
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
F. W. H. M. : Full Width at Half Maximum
3
SLD301V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
I
F
Forward current [mA]
0
250
500
0
100
200
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
T
C
= 10
C
T
C
= 0
C
T
C
= 25
C
T
C
= 50
C
Optical power output vs. Monitor current characteristics
Imon Monitor current [mA]
0
0.05
0.1
0
50
100
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
T
C
= 10
C
T
C
= 0
C
T
C
= 25
C
T
C
= 50
C
Threshold current vs. Temperature characteristics
Tc Case temperature [
C]
10
0
10
20
30
40
50
100
500
1000
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
30
20
10
0
10
20
30
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
T
C
= 25
C
P
O
= 90mW
P
O
= 60mW
P
O
= 30mW
Power depecdence of near field pattern
50
m
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
T
C
= 25
C
P
O
= 90mW
P
O
= 75mW
P
O
= 50mW
P
O
= 25mW
Oscillation wavelength vs. Temperature characteristics
Tc Case temperature [
C]
10
0
10
20
30
40
50
780
790
830
820
810
800
p
O
s
c
i
l
l
a
t
i
o
n
w
a
v
e
l
e
n
g
t
h
[
n
m
]
P
O
= 90mW
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