200mW High Power Laser Diode
Description
The SLD302XT allows independent thermal and electric design.
This laser diode has a built-in TE (Thermo Electric) cooler.
Features
High power
Recommended optical power output Po = 180mW
Low operating current
Flat Package with built-in photodiode, TE cooler and thermistor
Applications
Solid state laser excitation
Medical use
Structure
AlGaAs double-hetero-type laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 180mW, Tth = 25C
Absolute Maximum Ratings (Tth = 25C)
Optical power output
Po
200
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +50
C
Storage temperature
Tstg
40 to +85
C
1
E88062C02-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD302XT
1
2
T
H
LD
TE Cooler
PD
P
N
3
4
5
6
7
8
1
8
Equivalent Circuit
No.
1
2
3
4
5
6
7
8
Function
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
Pin Configuration (Top View)
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
2
SLD302XT
Electrical and Optical Characteristics
(Tth: Thermistor temperature, Tth = 25C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
p
Imon
//
X,
Y
D
Rth
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
Positional accuracy
Differential efficiency
Thermistor resistance
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
V
R
= 10V
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
Tth = 25C
770
0.65
150
350
1.9
0.3
28
12
0.9
10
200
500
3.0
840
40
17
100
3
mA
mA
V
nm
mA
degree
degree
m
degree
mW/mA
k
Perpendicular
Parallel
Position
Angle
Wavelength Selection Classification
Type
SLD302XT-1
SLD302XT-2
SLD302XT-3
Wavelength (nm)
785 15
810 10
830 10
Type
SLD302XT-21
SLD302XT-24
SLD302XT-25
Wavelength (nm)
798 3
807 3
810 3
AP
C
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
3
SLD302XT
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
I
F
Forward current [mA]
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Optical power output vs. Monitor current characteristics
Imon Monitor current [mA]
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Threshold current vs. Temperature characteristics
Tth Thermistor temperature [
C]
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Power depecdence of near field pattern
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Oscillation wavelength vs. Temperature characteristics
Tth Thermistor temperature [
C]
p
O
s
c
i
l
l
a
t
i
o
n
w
a
v
e
l
e
n
g
t
h
[
n
m
]
0
250
500
0
100
200
Tth = 0
C
Tth = 25
C
Tth = 50
C
0
0.1
0.2
0
100
200
Tth = 10
C
Tth = 0
C
Tth = 25
C
Tth = 50
C
10
0
10
20
30
40
50
100
500
1000
30
20
10
0
10
20
30
Tth = 25
C
P
O
= 180mW
P
O
= 90mW
P
O
= 30mW
50
m
Tth = 25
C
P
O
= 180mW
P
O
= 150mW
P
O
= 100mW
P
O
= 75mW
P
O
= 50mW
P
O
= 25mW
10
0
10
20
30
40
50
780
790
830
820
810
800
P
O
= 180mW
Tth = 10
C
4
SLD302XT
Differential efficiency vs. Temperature characteristics
Tth Thermistor temperature [
C]
10
0
50
40
30
20
10
0
0.5
1.0
1.5
D
D
i
f
f
e
r
e
n
t
i
a
l
e
f
f
i
c
i
e
n
c
y
[
m
W
/
m
A
]
Power dependence of polarization ratio
Po Optical power output [mW]
0
50
100
150
200
250
0
20
60
40
80
P
o
l
a
r
i
z
a
t
i
o
n
r
a
t
i
o
Tth = 25
C
5
SLD302XT
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 40mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 120mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 200mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 80mW
Wavelength [nm]
800
810
805
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 160mW
Power dependence of wavelength
6
SLD302XT
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 6
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 12
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 23
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 35
C
Wavelength [nm]
805
825
815
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 45
C
Temperature dependence of wavelength (Po = 180mW)
7
SLD302XT
1
5
10
50
R
t
h
T
h
e
r
m
i
s
t
o
r
r
e
s
i
s
t
a
n
c
e
[
k
]
Thermistor characteristics
Tth Thermistor temperature [
C]
10 0
10 20 30 40 50 60 70
0
0
2
5
4
3
1
5
10
Q
A
b
s
o
r
b
e
d
h
e
a
t
[
W
]
V
T
P
i
n
v
o
l
t
a
g
e
[
V
]
TE cooler characteristics 1
T Temperature difference [
C]
T : Tc Tth
Tth : Thermistor temperature
Tc : Case temperature
0
50
100
Tc = 33
C
I
T
= 2.5A
2.0A
2.0A
2.5
A
1.5
A
1.0
A
0.5
A
1.5A
0.5A
1.0A
T vs V
T
v
s Q
0
0
2
5
4
3
1
5
10
Q
A
b
s
o
r
b
e
d
h
e
a
t
[
W
]
V
T
P
i
n
v
o
l
t
a
g
e
[
V
]
TE cooler characteristics 2
T Temperature difference [
C]
0
50
100
Tth = 25
C
2.0A
1.5A
2.5
A
1.0
A
0.5
A
T v
s Q
I
T
= 2.5A
2.0A
1.5A
1.0A
0.5A
T vs V
TE cooler characteristics
8
SLD302XT
Package Outline
Unit: mm
M 273(LO 10)
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE STRUCTURE
M-273(LO-10)
33.0 0.05
1
5
.
0
0
.
0
5
5.0
4 R1.2 0.3
Window
Glass
8 0.6
2.54
*
7
.
5
0
.
1
1
4
.
0
2
8
.
0
0
.
5
38.0 0.5
19.0
LD Chip
28.0 0.5
16.5 0.1
3
.
0
7
.
5
0
.
2
1
1
.
3
5
0
.
1
0
.
6
5
M
A
X
1
0
.
4
Reference Plane
*
*Distance between pilot hole and emittng area
4 3.0
0
+ 0.05
+
2
.
0
8
.
0
1
.
0
PACKAGE WEIGHT
43g
Sony Corporation
PDF 
ZIP