1000mW High Power Laser Diode
Description
The SLD304XT allows independent thermal and electric design.
This laser diode has a built-in TE (Thermo Electric) cooler.
Features
High power
Recommended optical power output Po = 900mW
Low operating current
Flat Package with built-in photodiode, TE cooler and thermistor
Applications
Solid state laser excitation
Medical use
Structure
AlGaAs double-hetero-type laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 900mW, Tth = 25C
Absolute Maximum Ratings (Tth = 25C)
Optical power output
Po
1000
mW
Reverse voltage
V
R
LD
2
V
PD
15
V
Operating temperature
Topr
10 to +30
C
Storage temperature
Tstg
40 to +85
C
1
E88066C02-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD304XT
1
2
T
H
LD
TE Cooler
PD
P
N
3
4
5
6
7
8
1
8
Equivalent Circuit
No.
1
2
3
4
5
6
7
8
Function
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
Pin Configuration (Top View)
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
2
SLD304XT
Electrical and Optical Characteristics
(Tth: Thermistor temperature, Tth = 25C)
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
p
Imon
//
X,
Y
D
Rth
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
Positional accuracy
Differential efficiency
Thermistor resistance
P
O
= 900mW
P
O
= 900mW
P
O
= 900mW
P
O
= 900mW
V
R
= 10V
P
O
= 900mW
P
O
= 900mW
P
O
= 900mW
Tth = 25C
770
0.65
550
1600
2.2
1.5
28
13
0.85
10
750
2000
3.0
840
40
17
100
3
mA
mA
V
nm
mA
degree
degree
m
degree
mW/mA
k
Perpendicular
Parallel
Position
Angle
Wavelength Selection Classification
Type
SLD304XT-1
SLD304XT-2
SLD304XT-3
Wavelength (nm)
785 15
810 10
830 10
Type
SLD304XT-21
SLD304XT-24
SLD304XT-25
Wavelength (nm)
798 3
807 3
810 3
AP
C
ATC
Safety goggles for
protection from
laser beam
IR fluorescent plate
Optical
material
Optical power output control device
temperature control device
Lens
Laser diode
Optical boad
3
SLD304XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
I
F
Forward current [mA]
0
500
1000
1500
2000
0
500
1000
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Optical power output vs. Monitor current characteristics
Imon Monitor current [mA]
0
1
0.5
0
1000
500
P
o
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Threshold current vs. Temperature characteristics
Tth Thermistor temperature [
C]
10
0
10
20
30
100
1000
500
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
30
20
0
10
10
20
30
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
780
790
800
810
820
830
p
O
s
c
i
l
l
a
t
i
o
n
w
a
v
e
l
e
n
g
t
h
[
n
m
]
Oscillation wavelength vs. Temperature characteristics
Tth Thermistor temperature [
C]
10
0
10
20
30
40
Power dependence of near field pattern
200
m
R
a
d
i
a
t
i
o
n
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
Tth = 10
C
Tth = 0
C
T
th
= 25
C
T
th
= 30
C
Tth = 15
C
Tth = 15
C
Tth = 0
C
Tth = 25
C
Tth = 30
C
Tth = 25
C
Tth = 25
C
P
O
= 900mW
P
O
=
900mW
P
O
= 900mW
P
O
= 800mW
P
O
= 600mW
P
O
= 400mW
P
O
= 200mW
P
O
=
800mW
P
O
=
600mW
P
O
=
400mW
P
O
=
200mW
Tth = 10
C
4
SLD304XT
Differential efficiency vs. Temperature characteristics
Tth Thermistor temperature [
C]
10
10
0
20
30
40
0
0.5
1.0
D
D
i
f
f
e
r
e
n
t
i
a
l
e
f
f
i
c
i
e
n
c
y
[
m
W
/
m
A
]
Power dependence of polarization ratio
Po Optical power output [mW]
200
600
400
800
1000
0
100
400
300
200
P
o
l
a
r
i
z
a
t
i
o
n
r
a
t
i
o
Tth = 25
C
5
SLD304XT
Wavelength [nm]
800
805
810
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 200mW
Wavelength [nm]
800
805
810
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 400mW
Wavelength [nm]
800
805
810
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 600mW
Wavelength [nm]
800
805
810
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 900mW
Wavelength [nm]
800
805
810
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Tth = 25
C
Po = 800mW
Power dependence of wavelength
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