"This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products

to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical

or specification corrections, or modifications to the valid combinations offered may occur."

Publication Number S29AL008D_00 Revision A Amendment 3 Issue Date June 16, 2005

This document has not been approved. Sharing this document with non-Spansion employees violates QS9000/TS16949 requirements.

S29AL008D

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory

Data Sheet

Distinctive Characteristics

Architectural Advantage

Single power supply operation

-- 2.7 to 3.6 volt read and write operations for battery-

powered applications

Manufactured on 200nm process technology

-- Compatible with 0.32 祄 and 230nm Am29LV160

devices

Flexible sector architecture

-- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen

64 Kbyte sectors (byte mode)

-- One 8 Kword, two 4 Kword, one 16 Kword, and fifteen

32 Kword sectors (word mode)

-- Supports full chip erase
-- Sector Protection features:
-- A hardware method of locking a sector to prevent

any program or erase operations within that sector

-- Sectors can be locked in-system or via programming

equipment

-- Temporary Sector Unprotect feature allows code

changes in previously locked sectors

Unlock Bypass Program Command

-- Reduces overall programming time when issuing

multiple program command sequences

Top or bottom boot block configurations
available
Embedded Algorithms

-- Embedded Erase algorithm automatically

preprograms and erases the entire chip or any
combination of designated sectors

-- Embedded Program algorithm automatically writes

and verifies data at specified addresses

Compatibility with JEDEC standards

-- Pinout and software compatible with single-power

supply Flash

-- Superior inadvertent write protection

Performance Characteristics

High performance

-- Access times as fast as 55 ns
-- Extended temperature range (-40癈 to +125癈)

Ultra low power consumption (typical values
at 5 MHz)

-- 200 nA Automatic Sleep mode current
-- 200 nA standby mode current
-- 7 mA read current
-- 15 mA program/erase current

Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical

-- Reliable operation for the life of the system

Package option

48-ball FBGA
48-pin TSOP
44-pin SO

Software Features

Data# Polling and toggle bits

-- Provides a software method of detecting program or

erase operation completion

Erase Suspend/Erase Resume

-- Suspends an erase operation to read data from, or

program data to, a sector that is not being erased,
then resumes the erase operation

Hardware Features

Ready/Busy# pin (RY/BY#)

-- Provides a hardware method of detecting program or

erase cycle completion

Hardware reset pin (RESET#)

-- Hardware method to reset the device to reading array

data

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Notice On Data Sheet Designations

Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, in-
cluding development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to high-
light their presence and definitions.

Advance Information

The Advance Information designation indicates that Spansion LLC is developing one or more spe-
cific products, but has not committed any design to production. Information presented in a doc-
ument with this designation is likely to change, and in some cases, development on the product
may discontinue. Spansion LLC therefore places the following conditions upon Advance Informa-
tion content:

"This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice."

Preliminary

The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the prod-
uct life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon Prelimi-
nary content:

"This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications."

Combination

Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.

Full Production (No Designation on Document)

When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or V

range. Changes

may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion LLC applies the following conditions to documents in this category:

"This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur."

Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

General Description

The S29AL008D is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576
bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and
48-pin TSOP packages. For more information, refer to publication number 21536.
The word-wide data (x16) appears on DQ15璂Q0; the byte-wide (x8) data ap-
pears on DQ7璂Q0. This device requires only a single, 3.0 volt V

supply to

perform read, program, and erase operations. A standard EPROM programmer
can also be used to program and erase the device.

This device is manufactured using Spansion's 200nm process technology, and of-
fers all the features and benefits of the Am29LV800B, which was manufactured
using 0.32 祄 process technology.

The standard device offers access times of 70, 90, and 120 ns, allowing high
speed microprocessors to operate without wait states. To eliminate bus conten-
tion the device contains separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.

The device requires only a single 3.0 volt power supply for both read and write
functions. Internally generated and regulated voltages are provided for the pro-
gram and erase operations.

The device is entirely command set compatible with the JEDEC single-power-
supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an in-
ternal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to reading from other
Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This
initiates the Embedded Program algorithm--an internal algorithm that auto-
matically times the program pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates
the Embedded Erase algorithm--an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the
erase operation. During erase, the device automatically times the erase pulse
widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (tog-
gle) status bits. After a program or erase cycle is completed, the device is ready
to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.

Hardware data protection measures include a low V

detector that automat-

ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of the sectors of memory. This can be achieved in-system or via
programming equipment.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Table Of Contents

Product Selector Guide. . . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7

Special Handling Instructions for FBGA Package . . . . . . . . . . . . . . . . . 8

Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10

Standard Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 11

Table 1. S29AL008D Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .11

Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Requirements for Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . 11
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . 12
Program and Erase Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . .12
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Automatic Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
RESET#: Hardware Reset Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 2. S29AL008D Top Boot Block Sector Addresses . . . . . . . . . . . 14
Table 3. S29AL008D Bottom Boot Block Sector Addresses . . . . . . . . 15

Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Table 4. S29AL008D Autoselect Codes (High Voltage Method) . . . . . 16

Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 1. Temporary Sector Unprotect Operation . . . . . . . . . . . . . . . . . 17
Figure 2. In-System Sector Protect/Sector Unprotect Algorithms. . . . . 18

Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 19

Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Word/Byte Program Command Sequence . . . . . . . . . . . . . . . . . . . . . 20

Figure 3. Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . 23

Figure 4. Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 5. S29AL008D Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25

Write Operation Status . . . . . . . . . . . . . . . . . . . . 27

DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 5. Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

RY/BY#: Ready/Busy# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

DQ3: Sector Erase Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 6. Toggle Bit Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 6. Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 33
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 7. Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . 33
Figure 8. Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . 33

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 9. I

CC1

Current vs. Time (Showing Active and

Automatic Sleep Currents). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 10. Typical I

CC1

vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 11. Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 7. Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Key to Switching Waveforms . . . . . . . . . . . . . . . . 37

Figure 12. Input Waveforms and Measurement Levels . . . . . . . . . . . . . . 37

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 38

Table 8. Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 13. Read Operations Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 9. Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 14. RESET# Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 10. Word/Byte Configuration (BYTE#) . . . . . . . . . . . . . . . . . . . .40
Figure 15. BYTE# Timings for Read Operations . . . . . . . . . . . . . . . . . . . 41
Figure 16. BYTE# Timings for Write Operations . . . . . . . . . . . . . . . . . . 41

Erase / Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Figure 17. Program Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 18. Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . 44
Figure 19. Data# Polling Timings (During Embedded Algorithms) . . . . 45
Figure 20. Toggle Bit Timings (During Embedded Algorithms) . . . . . . 45
Figure 21. DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 11. Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 22. Temporary Sector Unprotect Timing Diagram . . . . . . . . . . 46
Figure 23. Sector Protect/Unprotect Timing Diagram . . . . . . . . . . . . . 47
Table 12. Alternate CE# Controlled Erase/Program Operations . . . . . 48
Figure 24. Alternate CE# Controlled Write Operation Timings. . . . . 49

Erase and Programming Performance. . . . . . . . . 49

Table 13. Latchup Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 14. TSOP, SO, and BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . 50

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 51

TS 048--48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
VBK 048 - 48 Ball Fine-Pitch Ball Grid Array (FBGA)
8.15 x 6.15 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
SO 044--44-Pin Small Outline Package . . . . . . . . . . . . . . . . . . . . . . .53

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 54

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Ordering Information

Standard Products

Spansion standard products are available in several packages and operating
ranges. The order number (Valid Combination) is formed by a combination of the
elements below.

Notes:

1. Type 0 is standard. Specify other options as required.
2. Type 1 is standard. Specify other options as required.
3. TSOP and SOP package markings omit packing type designator from ordering part number.
4. BGA package marking omits leading S29 and packing type designator from ordering part number.

Valid Combinations

Valid Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific valid combinations and to check on newly
released combinations.

S29AL008D

PACKING TYPE

= Tray

= Tube

= 7" Tape and Reel

= 13" Tape and Reel

MODEL NUMBER

= x8/x16, V

= 2.7 - 3.6V, top boot sector device

= x8/x16, V

= 3.0 - 3.6V. top boot sector device

= x8/x16, V

= 2.7 - 3.6V, bottom boot sector device

= x8/x16, V

= 3.0 - 3.6V. bottom boot sector device

TEMPERATURE RANGE

I =

Industrial

(-40

�

C to +85

�

= Extended (-40癈 to +125癈)

PACKAGE MATERIAL SET

= Standard

= Pb-Free

PACKAGE TYPE

= Thin Small Outline Package (TSOP) Standard Pinout

= Fine-pitch Ball-Grid Array Package

= Small Outline Package (SOP) Standard Pinout

SPEED OPTION

= 55 ns Access Speed

= 70 ns Access Speed

= 90 ns Access Speed

DEVICE NUMBER/DESCRIPTION

S29AL008D
8 Megabit Flash Memory manufactured using 200 nm process technology
3.0 Volt-only Read, Program, and Erase

S29AL008D Valid Combinations

Package Description

Device Number

Speed

Option

Package Type,

Material, and

Temperature Range

Model

Number

Packing Type

S29AL008D

TAI, TFI

R1, R2

0, 3 (

Note 1

)

TS048 (

Note 3

)

TSOP

70, 90

TAI, TFI, TAN, TFN

01, 02

BAI, BFI

R1, R2

0, 2, 3 (

Note 1

)

VBK048 (

Note 4

)

Fine-Pitch BGA

70, 90

BAI, BF, BAN, BFN

01, 02

MAI, MFI

R1, R2

0, 1, 3 (

Note 2

)

SO044 (

Note 3

)

SOP

70, 90

MAI, MFI, MAN, MFN

01, 02

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Device Bus Operations

This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is com-
posed of latches that store the commands, along with the address and data
information needed to execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the
function of the device.

Table 1

lists the device bus operations, the inputs and con-

trol levels they require, and the resulting output. The following subsections
describe each of these operations in further detail.

Legend:

L = Logic Low = V

, H = Logic High = V

, V

= 12.0 � 0.5 V, X = Don't Care, A

= Address In, D

= Data In, D

OUT

= Data Out

Notes:
1. Addresses are A18:A0 in word mode (BYTE# = V

), A18:A-1 in byte mode (BYTE# = V

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the

Sector Protection/Unprotection, on page 16

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O pins DQ15璂Q0 operate in
the byte or word configuration. If the BYTE# pin is set at logic 1, the device is in
word configuration, DQ15璂Q0 are active and controlled by CE# and OE#.

If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data
I/O pins DQ0璂Q7 are active and controlled by CE# and OE#. The data I/O pins
DQ8璂Q14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1)
address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must drive the CE# and OE#
pins to V

. CE# is the power control and selects the device. OE# is the output

control and gates array data to the output pins. WE# should remain at V

. The

BYTE# pin determines whether the device outputs array data in words or bytes.

Table 1. S29AL008D Device Bus Operations

Operation

CE# OE# WE# RESET#

Addresses

(

Note 1

)

DQ0�

DQ7

DQ8璂Q15

BYTE#

= V

BYTE#

= V

Read

OUT

DQ8璂Q14 = High-Z,

DQ15 = A-1

Write

Standby

�

0.3 V

�

0.3 V

High-Z High-Z

High-Z

Output Disable

High-Z High-Z

High-Z

Reset

High-Z High-Z

High-Z

Sector Protect (

Note 2

)

Sector Address,

A6 = L, A1 = H,

A0 = L

Sector Unprotect (

Note 2

)

Sector Address,

A6 = H, A1 = H,

A0 = L

Temporary Sector Unprotect

High-Z

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data on the device data
outputs. The device remains enabled for read access until the command register
contents are altered.

See

Reading Array Data, on page 19

for more information. Refer to the AC table

for timing specifications and to

Figure 13, on page 38

for the timing diagram. I

CC1

in the DC Characteristics table represents the active current specification for
reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V

, and OE# to V

For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to

Word/Byte Configuration, on page 11

for more information.

The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The

Word/Byte Program

Command Sequence, on page 20

contains details on programming data to the

device using both standard and Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device.

Table 2, on page 14

and

Table 3, on page 15

indicate the address space that each

sector occupies. A sector address consists of the address bits required to uniquely
select a sector. The

Command Definitions, on page 19

contains details on erasing

a sector or the entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7璂Q0. Standard read
cycle timings apply in this mode. Refer to the

Autoselect Mode, on page 15

and

Autoselect Command Sequence, on page 20

for more information.

CC2

in the DC Characteristics table represents the active current specification for

the write mode. The

AC Characteristics, on page 38

contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7璂Q0. Standard read cycle timings
and I

read specifications apply. Refer to

Write Operation Status, on page 27

for more information, and to

AC Characteristics, on page 38

for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V

� 0.3 V. (Note that this is a more restricted voltage range than

.) If CE# and RESET# are held at V

, but not within V

� 0.3 V, the device

is in the standby mode, but the standby current is greater. The device requires
standard access time (t

) for read access when the device is in either of these

standby modes, before it is ready to read data.

If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.

In the DC Characteristics table, I

CC3

and I

CC4

represents the standby current

specification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. The de-
vice automatically enables this mode when addresses remain stable for t

ACC

+ 30

ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the
system. I

CC4

in the DC Characteristics table represents the automatic sleep mode

current specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of resetting the device to reading
array data. When the RESET# pin is driven low for at least a period of t

, the

device immediately terminates any operation in progress, tristates all output
pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The op-
eration that was interrupted should be reinitiated once the device is ready to
accept another command sequence, to ensure data integrity.

Current is reduced for the duration of the RESET# pulse. When RESET# is held
at V

�0.3 V, the device draws CMOS standby current (I

CC4

). If RESET# is held

at V

but not within V

�0.3 V, the standby current is greater.

The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.

If RESET# is asserted during a program or erase operation, the RY/BY# pin re-
mains a 0 (busy) until the internal reset operation is complete, which requires a
time of t

READY

(during Embedded Algorithms). The system can thus monitor RY/

BY# to determine whether the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing (RY/BY# pin is 1), the reset
operation is completed within a time of t

READY

(not during Embedded Algorithms).

The system can read data t

after the RESET# pin returns to V

Refer to

AC Characteristics, on page 38

for RESET# parameters and to

Figure

14, on page 39

for the timing diagram.

Output Disable Mode

When the OE# input is at V

, output from the device is disabled. The output pins

are placed in the high impedance state.

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Table 2. S29AL008D Top Boot Block Sector Addresses

Sector

A18

A17

A16

A15

A14

A13

A12

Sector Size

(Kbytes/

Kwords)

Address Range (in hexadecimal)

(x8)

Address Range

(x16)

Address Range

SA0

64/32

00000h�0FFFFh

00000h�07FFFh

SA1

64/32

10000h�1FFFFh

08000h�0FFFFh

SA2

64/32

20000h�2FFFFh

10000h�17FFFh

SA3

64/32

30000h�3FFFFh

18000h�1FFFFh

SA4

64/32

40000h�4FFFFh

20000h�27FFFh

SA5

64/32

50000h�5FFFFh

28000h�2FFFFh

SA6

64/32

60000h�6FFFFh

30000h�37FFFh

SA7

64/32

70000h�7FFFFh

38000h�3FFFFh

SA8

64/32

80000h�8FFFFh

40000h�47FFFh

SA9

64/32

90000h�9FFFFh

48000h�4FFFFh

SA10

64/32

A0000h瑼FFFFh

50000h�57FFFh

SA11

64/32

B0000h瑽FFFFh

58000h�5FFFFh

SA12

64/32

C0000h瑿FFFFh

60000h�67FFFh

SA13

64/32

D0000h璂FFFFh

68000h�6FFFFh

SA14

64/32

E0000h璄FFFFh

70000h�77FFFh

SA15

32/16

F0000h璅7FFFh

78000h�7BFFFh

SA16

8/4

F8000h璅9FFFh

7C000h�7CFFFh

SA17

8/4

FA000h璅BFFFh

7D000h�7DFFFh

SA18

16/8

FC000h璅FFFFh

7E000h�7FFFFh

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Note for Tables and : Address range is A18:A-1 in byte mode and A18:A0 in word mode. See

Word/Byte Configura-

tion, on page 11

Autoselect Mode

The autoselect mode provides manufacturer and device identification, and sector
protection verification, through identifier codes output on DQ7璂Q0. This mode
is primarily intended for programming equipment to automatically match a device
to be programmed with its corresponding programming algorithm. However, the
autoselect codes can also be accessed in-system through the command register.

When using programming equipment, the autoselect mode requires V

(11.5 V

to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in

Table 4, on page 16

. In addition, when verifying sector protection, the sector ad-

dress must appear on the appropriate highest order address bits (see

Table 2, on

page 14

and

Table 3, on page 15

Table 4, on page 16

shows the remaining ad-

dress bits that are don't care. When all necessary bits are set as required, the
programming equipment may then read the corresponding identifier code on
DQ7璂Q0.

To access the autoselect codes in-system, the host system can issue the autose-
lect command via the command register, as shown in

Table 5, on page 25

. This

method does not require V

. See

Command Definitions, on page 19

for details

on using the autoselect mode.

Table 3. S29AL008D Bottom Boot Block Sector Addresses

Sector

A18

A17

A16

A15

A14

A13

A12

Sector Size

(Kbytes/

Kwords)

Address Range (in hexadecimal)

(x8)

Address Range

(x16)

Address Range

SA0

16/8

00000h�03FFFh

00000h�01FFFh

SA1

8/4

04000h�05FFFh

02000h�02FFFh

SA2

8/4

06000h�07FFFh

03000h�03FFFh

SA3

32/16

08000h�0FFFFh

04000h�07FFFh

SA4

64/32

10000h�1FFFFh

08000h�0FFFFh

SA5

64/32

20000h�2FFFFh

10000h�17FFFh

SA6

64/32

30000h�3FFFFh

18000h�1FFFFh

SA7

64/32

40000h�4FFFFh

20000h�27FFFh

SA8

64/32

50000h�5FFFFh

28000h�2FFFFh

SA9

64/32

60000h�6FFFFh

30000h�37FFFh

SA10

64/32

70000h�7FFFFh

38000h�3FFFFh

SA11

64/32

80000h�8FFFFh

40000h�47FFFh

SA12

64/32

90000h�9FFFFh

48000h�4FFFFh

SA13

64/32

A0000h瑼FFFFh

50000h�57FFFh

SA14

64/32

B0000h瑽FFFFh

58000h�5FFFFh

SA15

64/32

C0000h瑿FFFFh

60000h�67FFFh

SA16

64/32

D0000h璂FFFFh

68000h�6FFFFh

SA17

64/32

E0000h璄FFFFh

70000h�77FFFh

SA18

64/32

F0000h璅FFFFh

78000h�7FFFFh

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

L = Logic Low = V

, H = Logic High = V

, SA = Sector Address, X = Don't care.

Sector Protection/Unprotection

The hardware sector protection feature disables both program and erase opera-
tions in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected sectors.

The device is shipped with all sectors unprotected. Spansion offers the option of
programming and protecting sectors at its factory prior to shipping the device
through Spansion's ExpressFlashTM Service. Contact an Spansion representative
for details.

It is possible to determine whether a sector is protected or unprotected. See

Autoselect Mode, on page 15

for details.

Sector Protection/unprotection can be implemented via two methods.

The primary method requires V

on the RESET# pin only, and can be imple-

mented either in-system or via programming equipment.

Figure 2, on page 18

shows the algorithms and

Figure 23, on page 47

shows the timing diagram. This

method uses standard microprocessor bus cycle timing. For sector unprotect, all
unprotected sectors must first be protected prior to the first sector unprotect
write cycle.

The alternate method intended only for programming equipment requires V

address pin A9 and OE#. This method is compatible with programmer routines
written for earlier 3.0 volt-only Spansion flash devices. Publication number 20536
contains further details; contact an Spansion representative to request a copy.

Temporary Sector Unprotect

This feature allows temporary unprotection of previously protected sectors to
change data in-system. The Sector Unprotect mode is activated by setting the
RESET# pin to V

. During this mode, formerly protected sectors can be pro-

grammed or erased by selecting the sector addresses. Once V

is removed from

the RESET# pin, all the previously protected sectors are protected again.

Table 4. S29AL008D Autoselect Codes (High Voltage Method)

Description

Mode

CE# OE# WE#

A18

A12

A11

A10 A9

DQ8

DQ15

DQ7

DQ0

Manufacturer ID: Spansion

01h

Device ID:

Am29LV800B

(Top Boot Block)

Word

22h

DAh

Byte

DAh

Device ID:

Am29LV800B

(Bottom Boot
Block)

Word

22h

5Bh

Byte

5Bh

Sector Protection
Verification

01h

(protected)

00h

(unprotected

)

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Figure 2. In-System Sector Protect/Sector Unprotect Algorithms

Sector Protect:

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Set up sector

address

Wait 150 s

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

A1 = 1, A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

START

PLSCNT = 1

RESET# = V

Wait 1 ms

First Write

Cycle = 60h?

Data = 01h?

Remove V

from RESET#

Write reset

command

Sector Protect

complete

Yes

PLSCNT

= 25?

Yes

Device failed

Increment

PLSCNT

Temporary Sector

Unprotect Mode

Sector Unprotect:

Write 60h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Set up first sector

address

Wait 15 ms

Verify Sector

Unprotect: Write

40h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 1,

A1 = 1, A0 = 0

START

PLSCNT = 1

RESET# = V

Wait 1 ms

Data = 00h?

Last sector

verified?

Remove V

from RESET#

Write reset

command

Sector Unprotect

complete

Yes

PLSCNT

= 1000?

Yes

Device failed

Increment

PLSCNT

Temporary Sector

Unprotect Mode

All sectors

protected?

Yes

Protect all sectors:

The indicated portion

of the sector protect

algorithm must be

performed for all

unprotected sectors

prior to issuing the

first sector

unprotect address

Set up

next sector

address

Yes

Sector Protect

Algorithm

Sector Unprotect

Algorithm

First Write

Cycle = 60h?

Protect another

sector?

Reset

PLSCNT = 1

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Hardware Data Protection

The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to

Table 5, on page 25

for command definitions). In addition, the following hardware data protection
measures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during V

power-up and power-down

transitions, or from system noise.

Low V

Write Inhibit

When V

is less than V

LKO

, the device does not accept any write cycles. This pro-

tects data during V

power-up and power-down. The command register and all

internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until V

is greater than V

LKO

. The system must provide the

proper signals to the control pins to prevent unintentional writes when V

greater than V

LKO

Write Pulse Glitch Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# = V

, CE# = V

or WE# =

. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a

logical one.

Power-Up Write Inhibit

If WE# = CE# = V

and OE# = V

during power up, the device does not accept

commands on the rising edge of WE#. The internal state machine is automatically
reset to reading array data on power-up.

Command Definitions

Writing specific address and data commands or sequences into the command
register initiates device operations.

Table 5, on page 25

defines the valid register

command sequences. Writing incorrect address and data values or writing
them in the improper sequence resets the device to reading array data.

All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the

AC Characteristics, on

page 38

Reading Array Data

The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.

After the device accepts an Erase Suspend command, the device enters the Erase
Suspend mode. The system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Erase Sus-
pend mode, the system may once again read array data with the same exception.
See

Erase Suspend/Erase Resume Commands, on page 23

for more information

on this mode.

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

The system must issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the

Reset Com-

mand

, next.

See also

Requirements for Reading Array Data, on page 11

for more information.

The table provides the read parameters, and

Figure 13, on page 38

shows the

timing diagram.

Reset Command

Writing the reset command to the device resets the device to reading array data.
Address bits are don't care for this command.

The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the
operation is complete.

The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to read-
ing array data (also applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset commands until the op-
eration is complete.

The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to reading array data (also applies to autoselect during Erase
Suspend).

If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to reading array data (also applies during Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host system to access the manu-
facturer and devices codes, and determine whether or not a sector is protected.

Table 5, on page 25

shows the address and data requirements. This method is an

alternative to that shown in

Table 4, on page 16

, which is intended for PROM pro-

grammers and requires V

on address bit A9.

The autoselect command sequence is initiated by writing two unlock cycles, fol-
lowed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number of times, without initiating
another command sequence.

A read cycle at address XX00h retrieves the manufacturer code. A read cycle at
address XX01h in word mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the address 02h in word mode
(or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is un-
protected. Refer to

Table 2, on page 14

and

Table 3, on page 15

for valid sector

addresses.

The system must write the reset command to exit the autoselect mode and return
to reading array data.

Word/Byte Program Command Sequence

The system may program the device by word or byte, depending on the state of
the BYTE# pin. Programming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write cycles, followed by the

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

program set-up command. The program address and data are written next, which
in turn initiate the Embedded Program algorithm. The system is not required to
provide further controls or timings. The device automatically provides internally
generated program pulses and verifies the programmed cell margin.

Table 5, on

page 25

shows the address and data requirements for the byte program com-

mand sequence.

When the Embedded Program algorithm is complete, the device then returns to
reading array data and addresses are no longer latched. The system can deter-
mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See

Write Operation Status, on page 27

for information on these status bits.

Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that a hardware reset immediately terminates the program-
ming operation. The program command sequence should be reinitiated once the
device resets to reading array data, to ensure data integrity.

Programming is allowed in any sequence and across sector boundaries. A bit
cannot be programmed from a 0 back to a 1. Attempting to do so may halt
the operation and set DQ5 to 1, or cause the Data# Polling algorithm to indicate
the operation was successful. However, a succeeding read shows that the data is
still 0. Only erase operations can convert a 0 to a 1.

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to program bytes or words to the
device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
in the standard program command sequence, resulting in faster total program-
ming time.

Table 5, on page 25

shows the requirements for the command

sequence.

During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h. Addresses are don't
care for both cycles. The device then returns to reading array data.

Figure 3, on page 22

illustrates the algorithm for the program operation. See

Erase / Program Operations, on page 42

i for parameters, and

Figure 17, on

page 43

for timing diagrams.

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Note: See

Table 5, on page 25

for program command sequence.

Figure 3. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations.

Table 5, on page 25

shows the address and data

requirements for the chip erase command sequence.

Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a hardware reset during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device returns to reading array data, to ensure data integrity.

The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See

Write Operation Status, on page 27

for information on

these status bits. When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer latched.

START

Write Program

Command Sequence

Data Poll

from System

Verify Data?

Yes

Last Address?

Yes

Programming

Completed

Increment Address

Embedded

Program

algorithm

in progress

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Figure 4, on page 25

illustrates the algorithm for the erase operation. See

Erase

/ Program Operations, on page 42

for parameters, and

Figure 18, on page 44

for

timing diagrams.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock write cycles are then followed by the address of the sector to be
erased, and the sector erase command.

Table 5, on page 25

shows the address

and data requirements for the sector erase command sequence.

The device does not require the system to preprogram the memory prior to erase.
The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.

After the command sequence is written, a sector erase time-out of 50 祍 begins.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 祍, otherwise the last
address and command might not be accepted, and erasure may begin. It is rec-
ommended that processor interrupts be disabled during this time to ensure all
commands are accepted. The interrupts can be re-enabled after the last Sector
Erase command is written. If the time between additional sector erase commands
can be assumed to be less than 50 祍, the system need not monitor DQ3. Any
command other than Sector Erase or Erase Suspend during the time-out
period resets the device to reading array data. The system must rewrite the
command sequence and any additional sector addresses and commands.

The system can monitor DQ3 to determine if the sector erase timer has timed
out. (See

DQ3: Sector Erase Timer, on page 30

.) The time-out begins from the

rising edge of the final WE# pulse in the command sequence.

Once the sector erase operation begins, only the Erase Suspend command is
valid. All other commands are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the operation. The Sector Erase
command sequence should be reinitiated once the device returns to reading array
data, to ensure data integrity.

When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to

Write

Operation Status, on page 27

for information on these status bits.

Figure 4, on page 25

illustrates the algorithm for the erase operation. Refer to

Erase / Program Operations, on page 42

for parameters, and to

Figure 18, on

page 44

for timing diagrams.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt a sector erase oper-
ation and then read data from, or program data to, any sector not selected for
erasure. This command is valid only during the sector erase operation, including
the 50 祍 time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Em-
bedded Program algorithm. Writing the Erase Suspend command during the

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are don't-cares when writing the Erase Suspend
command.

When the Erase Suspend command is written during a sector erase operation, the
device requires a maximum of 20 祍 to suspend the erase operation. However,
when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase
operation.

After the erase operation is suspended, the system can read array data from or
program data to any sector not selected for erasure. (The device erase suspends
all sectors selected for erasure.) Normal read and write timings and command
definitions apply. Reading at any address within erase-suspended sectors pro-
duces status data on DQ7璂Q0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. See

Write Operation Status, on page 27

for information on these status bits.

After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See

Write Operation Status, on page 27

for

more information.

The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See

Autoselect Com-

mand Sequence, on page 20

for more information.

The system must write the Erase Resume command (address bits are don't care)
to exit the erase suspend mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another Erase Suspend command
can be written after the device resumes erasing.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Notes:
1. See

Table 5, on page 25

for erase command sequence.

2. See

DQ3: Sector Erase Timer, on page 30

for more information.

Figure 4. Erase Operation

Table 5. S29AL008D Command Definitions

Command

Sequence

(

Note 1

)

c
l
e

Bus Cycles (Notes

)

First

Second

Third

Fourth

Fifth

Sixth

Addr

Data

Addr

Data

Addr

Data Addr

Data

Addr Data

Addr

Data

Read (

Note 6

)

Reset (

Note 7

)

XXX

s
e

l
e

c
t
(

Not

)

Manufacturer ID

Word

555

2AA

555

X00

Byte

AAA

555

AAA

Device ID,

Top Boot Block

Word

555

2AA

555

X01

22DA

Byte

AAA

555

AAA

X02

Device ID,

Bottom Boot Block

Word

555

2AA

555

X01

225B

Byte

AAA

555

AAA

X02

Sector Protect Verify

(

Note 9

)

Word

555

2AA

555

(SA)

X02

XX00
XX01

Byte

AAA

555

AAA

(SA)

X04

00
01

Program

Word

555

2AA

555

Byte

AAA

555

AAA

Unlock Bypass

Word

555

2AA

555

Byte

AAA

555

AAA

Unlock Bypass Program (

Note 10

)

XXX

Unlock Bypass Reset (

Note 11

)

XXX

Chip Erase

Word

555

2AA

555

2AA

555

Byte

AAA

555

AAA

555

AAA

Sector Erase

Word

555

2AA

555

2AA

Byte

AAA

555

AAA

555

Erase Suspend (

Note 12

)

XXX

Erase Resume (

Note 13

)

XXX

START

Write Erase

Command Sequence

Data Poll

from System

Data = FFh?

Yes

Erasure Completed

Embedded

Erase

algorithm

in progress

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Legend:

X = Don't care, RA = Address of the memory location to be read, RD = Data read from location RA during read operation, and

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever
happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18瑼12 uniquely select any
sector.

Notes:
1. See

Table 1, on page 11

for a description of bus operations.

2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operations.
4. Data bits DQ15璂Q8 are don't cares for unlock and command cycles.
5. Address bits A18瑼11 are don't cares for unlock and command cycles, unless PA or SA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5

goes high (while the device is providing status data).

8. The fourth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See

Autoselect Command Sequence, on

page 20

for more information.

10.The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11.The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock

bypass mode.

12.The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend

mode. The Erase Suspend command is valid only during a sector erase operation.

13.The Erase Resume command is valid only during the Erase Suspend mode.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Write Operation Status

The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#.

Table 6, on page 32

and the following

subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each
offer a method for determining whether a program or erase operation is complete
or in progress. These three bits are discussed first.

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.

During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 祍, then the device returns to reading array data.

During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When
the Embedded Erase algorithm is complete, or if the device enters the Erase Sus-
pend mode, Data# Polling produces a 1 on DQ7. This is analogous to the
complement/true datum output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to 1; prior to this, the device
outputs the complement, or 0. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.

After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 祍, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.

When the system detects DQ7 changes from the complement to true data, it can
read valid data at DQ7璂Q0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0璂Q6 while Output Enable (OE#) is as-
serted low.

Figure 19, on page 45

, Data# Polling Timings (During

Embedded Algorithms), illustrates this.

Table 6, on page 32

shows the outputs for Data# Polling on DQ7.

Figure 5, on

page 28

shows the Data# Polling algorithm.

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during the Erase Suspend
mode), or is in the standby mode.

Table 6, on page 32

shows the outputs for RY/BY#.

Figure 13, on page 38

Figure

Figure 17, on page 43

and

Figure 18, on page 44

shows RY/BY# for read,

reset, program, and erase operations, respectively.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm operation, successive read cy-
cles to any address cause DQ6 to toggle. (The system may use either OE# or CE#
to control the read cycles.) When the operation is complete, DQ6 stops toggling.

After an erase command sequence is written, if all sectors selected for erasing
are protected, DQ6 toggles for approximately 100 祍, then returns to reading
array data. If not all selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the selected sectors that are
protected.

The system can use DQ6 and DQ2 together to determine whether a sector is ac-
tively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-
ters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-
natively, the system can use DQ7 (see the subsection

DQ7: Data# Polling, on

page 27

If a program address falls within a protected sector, DQ6 toggles for approxi-
mately 1 祍 after the program command sequence is written, then returns to
reading array data.

DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.

Table 6, on page 32

shows the outputs for Toggle Bit I on DQ6.

Figure 6, on page

shows the toggle bit algorithm.

Figure 20, on page 45

shows the toggle bit

timing diagrams.

Figure 21, on page 46

shows the differences between DQ2 and

DQ6 in graphical form. See also the subsection

DQ2: Toggle Bit II, on page 29

DQ2: Toggle Bit II

The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.

DQ2 toggles when the system reads at addresses within those sectors that were
selected for erasure. (The system may use either OE# or CE# to control the read
cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is
erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

for erasure. Thus, both status bits are required for sector and mode information.
Refer to

Table 6, on page 32

to compare outputs for DQ2 and DQ6.

Figure 6, on page 31

shows the toggle bit algorithm in flowchart form, and the

section "DQ2: Toggle Bit II" explains the algorithm. See also the

DQ6: Toggle Bit

I, on page 29

subsection.

Figure 20, on page 45

shows the toggle bit timing dia-

gram.

Figure 21, on page 46

shows the differences between DQ2 and DQ6 in

graphical form.

Reading Toggle Bits DQ6/DQ2

Refer to

Figure 6, on page 31

for the following discussion. Whenever the system

initially begins reading toggle bit status, it must read DQ7璂Q0 at least twice in
a row to determine whether a toggle bit is toggling. Typically, the system would
note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If
the toggle bit is not toggling, the device completed the program or erase opera-
tion. The system can read array data on DQ7璂Q0 on the following read cycle.

However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device success-
fully completed the program or erase operation. If it is still toggling, the device
did not completed the operation successfully, and the system must write the reset
command to return to reading array data.

The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as de-
scribed in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algo-
rithm when it returns to determine the status of the operation (top of

Figure 6,

on page 31

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time exceeded a specified internal
pulse count limit. Under these conditions DQ5 produces a 1. This is a failure con-
dition that indicates the program or erase cycle was not successfully completed.

The DQ5 failure condition may appear if the system tries to program a 1 to a lo-
cation that is previously programmed to 0. Only an erase operation can
change a 0 back to a 1. Under this condition, the device halts the operation,
and when the operation exceeds the timing limits, DQ5 produces a 1.

Under both these conditions, the system must issue the reset command to return
the device to reading array data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the system may read DQ3 to de-
termine whether or not an erase operation started. (The sector erase timer does
not apply to the chip erase command.) If additional sectors are selected for era-
sure, the entire time-out also applies after each additional sector erase
command. When the time-out is complete, DQ3 switches from 0 to 1. The system
may ignore DQ3 if the system can guarantee that the time between additional

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Absolute Maximum Ratings

Storage Temperature Plastic Packages . . . . . . . . . . . . . . . . .�65癈 to +150癈
Ambient Temperature with Power Applied . . . . . . . . . . . . . . .�65癈 to +125癈
Voltage with Respect to Ground V

(

Note 1

) . . . . . . . . . . . .�0.5 V to +4.0 V

A9, OE#, and RESET# (

Note 2

) . . . . . . . . . . . . . . . . . . . . . �0.5 V to +12.5 V

All other pins (

Note 1

) . . . . . . . . . . . . . . . . . . . . . . . . . �0.5 V to V

+0.5 V

Output Short Circuit Current (

Note 3

). . . . . . . . . . . . . . . . . . . . . . . . 200 mA

Notes:
1. Minimum DC voltage on input or I/O pins is �0.5 V. During voltage transitions, input or I/O pins may undershoot V

to �2.0 V for periods of up to 20 ns. See

Figure 7, on page 33

. Maximum DC voltage on input or I/O pins is V

+0.5

V. During voltage transitions, input or I/O pins may overshoot to V

+2.0 V for periods up to 20 ns. See

Figure 8,

on page 33

2. Minimum DC input voltage on pins A9, OE#, and RESET# is �0.5 V. During voltage transitions, A9, OE#, and

RESET# may undershoot V

to �2.0 V for periods of up to 20 ns. See

Figure 7, on page 33

. Maximum DC input

voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.

3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater

than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections
of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.

Operating Ranges

Industrial (I) Devices

Ambient Temperature (T

) . . . . . . . . . . . . . . . . . . . . . . . . . -40癈 to +85癈

Extended (N) Devices

Ambient Temperature (T

) . . . . . . . . . . . . . . . . . . . . . . . . -40癈 to +125癈

Supply Voltages

for regulated voltage range . . . . . . . . . . . . . . . . . . . . . +3.0 V to +3.6 V

for full voltage range . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 V to +3.6 V

Operating ranges define those limits between which the functionality of the device is guaranteed

Figure 7. Maximum Negative Overshoot Waveform Figure 8. Maximum Positive Overshoot Waveform

20 ns

+0.8 V

�0.5 V

�2.0 V

20 ns

+2.0 V

+0.5 V

2.0 V

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

DC Characteristics

Notes:
1. The I

current listed is typically less than 2 mA/MHz, with OE# at V

. Typical V

is 3.0 V.

2. Maximum I

specifications are tested with V

= V

CCmax

3. I

active while Embedded Erase or Embedded Program is in progress.

4. At extended temperature range (>+85癈), typical current is 5礎 and maximum current is 10礎.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t

ACC

+ 30 ns.

6. Not 100% tested.

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

Input Load Current

= V

to V

= V

max

�1.0

礎

LIT

A9 Input Load Current

= V

CC max

; A9 = 12.5 V

礎

Output Leakage Current

OUT

= V

to V

= V

CC max

�1.0

礎

CC1

Active Read Current

(Notes

)

CE# = V

IL,

OE#

IH,

Byte Mode

10 MHz

5 MHz

1 MHz

CE# = V

IL,

OE#

IH,

Word Mode

10 MHz

5 MHz

1 MHz

CC2

Active Write Current

(Notes

)

CE# = V

IL,

OE#

CC3

Standby Current (Notes

)

CE#, RESET# = V

�0.3 V

0.2

礎

CC4

Reset Current (Notes

)

RESET# = V

� 0.3 V

0.2

礎

CC5

Automatic Sleep Mode

(Notes

)

= V

� 0.3 V;

= V

� 0.3 V

0.2

礎

Input Low Voltage

�0.5

0.8

Input High Voltage

0.7 x V

+ 0.3

Voltage for Autoselect and

Temporary Sector Unprotect

= 3.3 V

11.5

12.5

Output Low Voltage

= 4.0 mA, V

= V

CC min

0.45

OH1

Output High Voltage

= �2.0 mA, V

= V

CC min

2.4

OH2

= �100 礎, V

= V

CC min

�0.4

LKO

Low V

Lock-Out Voltage

2.3

2.5

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

2. Under worst case conditions of 90癈, V

= 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most

bytes program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program

command. See

Table 5, on page 25

for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.

Includes all pins except V

. Test conditions: V

= 3.0 V, one pin at a time.

Notes:
1. Sampled, not 100% tested.
2. Test conditions T

= 25癈, f = 1.0 MHz.

Table 13. Latchup Characteristics

Description

Min

Max

Input voltage with respect to V

on all pins except I/O pins

(including A9, OE#, and RESET#)

�1.0 V

12.5 V

Input voltage with respect to V

on all I/O pins

�1.0 V

+ 1.0 V

Current

�100 mA

+100 mA

Table 14. TSOP, SO, and BGA Pin Capacitance

Parameter

Symbol

Parameter Description

Test Setup

Package

Typ

Max

Unit

Input Capacitance

= 0

TSOP, SO

7.5

BGA

4.2

5.0

OUT

Output Capacitance

OUT

= 0

TSOP, SO

8.5

BGA

5.4

6.5

IN2

Control Pin Capacitance

= 0

TSOP, SO

7.5

BGA

3.9

4.7

S29AL008D

S29AL008D_00A3 June 16, 2005

D a t a S h e e t

Physical Dimensions

VBK 048 - 48 Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 x 6.15 mm

3338 \ 16-038.25b

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT

NOTED).

4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE

"D"

DIRECTION.

SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE

"E"

DIRECTION.

N IS THE TOTAL NUMBER OF SOLDER BALLS.

6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM C.

7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS

A AND B AND DEFINE THE POSITION OF THE CENTER

SOLDER BALL IN THE OUTER ROW.

WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN

THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,

RESPECTIVELY, SD OR SE = 0.000.

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN

THE OUTER ROW, SD OR SE = e/2

8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED

BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK

MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.

PACKAGE VBK

048

JEDEC N/A

6.15 mm x 8.15 mm NOM

PACKAGE

SYMBOL MIN NOM MAX

NOTE

---

1.00 OVERALL

THICKNESS

0.18

---

--- BALL

HEIGHT

0.62

---

0.76 BODY

THICKNESS

8.15 BSC.

BODY SIZE

6.15 BSC.

BODY SIZE

5.60 BSC.

BALL FOOTPRINT

4.00 BSC.

BALL FOOTPRINT

ROW MATRIX SIZE D DIRECTION

ROW MATRIX SIZE E DIRECTION

N 48

TOTAL

BALL

COUNT

0.35

---

0.43 BALL

DIAMETER

0.80 BSC.

BALL PITCH

SD / SE

0.40 BSC.

SOLDER BALL PLACEMENT

---

DEPOPULATED SOLDER BALLS

SIDE VIEW

TOP VIEW

SEATING PLANE

(4X)

0.10

0.08

BOTTOM VIEW

A1 CORNER

f 0.15

f 0.08

PIN A1

CORNER

INDEX MARK

June 16, 2005 S29AL008D_00A3

S29AL008D

D a t a S h e e t

Erase/Program Operation Table
Added 55ns speed option.

Alternate CE# Controlled Erase/Program Operation Table
Added 55ns speed option.

Erase and Programming Performance
Changed Byte Programing Time values for Typical and Maximum.

Revision A3 (June 16, 2005)

Changed from Preliminary to full Data Sheet.

Updated Valid Combinations table.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-men-
tioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.

Trademarks and Notice

The contents of this document are subject to change without notice. This document may contain information on a Spansion LLC product under development
by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement
of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the
use of the information in this document.

Copyright �2004-2005 Spansion LLC. All rights reserved. Spansion, the Spansion logo, and MirrorBit are trademarks of Spansion LLC. Other company and
product names used in this publication are for identification purposes only and may be trademarks of their respective companies

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Document Outline

协谢械泻褌褉芯薪薪褘泄 泻芯屑锌芯薪械薪褌: S29AL008D70MAN021

Document Outline

协谢械泻褌褉芯薪薪褘泄泻芯屑锌芯薪械薪褌: S29AL008D70MAN021