SHANGHAI SUNRISE ELECTRONICS CO., LTD.
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
Glass passivated junction chip
High surge capability
Solderable electrode surfaces Ideal for hybrids
MECHANICAL DATA
Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
RC10S
01G
RC10S
02G
RC10S
04G
RC10S
06G
RC10S
08G
RC10S
10G
UNITS
Maximum Repetitive Peak Reverse Voltage
V
RRM
100
200
400
600
800
1000
V
Maximum RMS Voltage
V
RMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V
DC
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
(Note 2)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
A
(at rated DC blocking voltage)
T
a
=150
o
C
A
Typical Junction Capacitance
(Note 1)
C
J
pF
Typical Thermal Resistance
(Note 3) R
(ja)
o
C/W
Storage and Operation Junction Temperature T
STG
,T
J
o
C
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
http://www.sse-diode.com
A
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
I
F(AV)
10
A
V
1
1.0
-50 to +150
RC10S01G THRU RC10S10G
SILICON GPP
CELL RECTIFIER
300
I
R
10
300
V
F
I
FSM
400
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
PDF 
ZIP