SHANGHAI SUNRISE ELECTRONICS CO., LTD.
VOLTAGE: 100 TO 1000V CURRENT: 30A
FEATURES
Glass passivated junction chip
High surge capability
Solderable electrode surfaces
Ideal for hybrids
MECHANICAL DATA
Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
RC30S
01G
RC30S
02G
RC30S
04G
RC30S
06G
RC30S
08G
RC30S
10G
UNITS
Maximum Repetitive Peak Reverse Voltage
V
RRM
100
200
400
600
800
1000
V
Maximum RMS Voltage
V
RMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V
DC
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
(T
a
=55
o
C)
(Note 2)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
A
(at rated DC blocking voltage)
T
a
=150
o
C
A
Typical Junction Capacitance
(Note 1)
C
J
pF
Typical Thermal Resistance
(Note 3) R
(ja)
o
C/W
Storage and Operation Junction Temperature T
STG
,T
J
o
C
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
http://www.sse-diode.com
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
RC30S01G THRU RC30S10G
SILICON GPP
CELL RECTIFIER
RATINGS
I
F(AV)
30
A
I
FSM
400
A
V
F
1.00
V
1
-50 to +150
I
R
10
750
300
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
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