SHANGHAI SUNRISE ELECTRONICS CO., LTD.
VOLTAGE: 20 TO 60V CURRENT: 8.0A
FEATURES
Epitaxial construction for chip
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
Polarity: As marked
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
SB
820
SB
830
SB
835
SB
840
SB
850
SB
860
UNITS
Maximum Repetitive Peak Reverse Voltage
V
RRM
20
30
35
40
50
60
V
Maximum RMS Voltage
V
RMS
14
21
25
28
35
42
V
Maximum DC Blocking Voltage
V
DC
20
30
35
40
50
60
V
Maximum Average Forward Rectified Current
(T
C
=95
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 8.0A DC)
V
F
V
Maximum DC Reverse Current
T
a
=25
o
C
mA
(at rated DC blocking voltage)
T
a
=100
o
C
mA
Typical Junction Capacitance
(Note 1)
C
J
pF
Typical Thermal Resistance
(Note 2)
R
(ja)
o
C/W
Operating Junction Temperature
T
J
o
C
Storage Temperature
T
STG
o
C
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to case
3. Suffix "R" for reverse polarity
http://www.sse-diode.com
SB820 THRU SB860
SCHOTTKY BARRIER
RECTIFIER
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load, derate current by 20%)
RATINGS
8.0
150
0.65
0.75
I
R
5.0
50.0
700
450
2.5
-65 to +125
-65 to +150
-65 to +150
I
F(AV)
I
FSM
A
A
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
TO-220A
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