2005 SST Communications Corp.
S71277-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
Typically 35 dB gain across 2.4~2.5 GHz over
temperature 0C to +80C
High linear output power:
>29 dBm P1dB (Exceeding maximum rating of
average output power, never measure with CW
source! Pulsed single-tone source with <50%
duty cycle is recommended.)
Meets 802.11g OFDM ACPR requirement up to
25 dBm
Added EVM~4% up to 23.5 dBm for
54 Mbps 802.11g signal
Meets 802.11b ACPR requirement up to 25 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
~26%/290 mA @ P
OUT
= 24 dBm for 802.11g
~29%/340 mA @ P
OUT
= 25 dBm for 802.11b
Built-in Ultra-low I
REF
power-up/down control
I
REF
<2 mA
Low idle current
~50 mA I
CQ
High-speed power-up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
~1 dB gain/power variation between 0C to +80C
~1 dB detector variation over 0C to +80C
Low shut-down current (< 0.1 A)
On-chip power detection
25 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP15 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP15 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It typically provides 35 dB gain with 26% power-
added efficiency @ P
OUT
= 24 dBm for 802.11g and 29%
power-added efficiency @ P
OUT
= 25 dBm for 802.11b.
The SST12LP15 has excellent linearity, typically ~4%
added EVM at 23.5 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 24+ dBm. SST12LP15 also has wide-
range (>25 dB), temperature-stable (~1 dB over 80C), sin-
gle-ended/differential power detectors which lower users'
cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
<2 mA) makes the
SST12LP15 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP15 ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP15 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
SST-GP12152.4 GHz High Gain High Power PA
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
2
FUNCTIONAL BLOCKS
2
5
6
8
16
VCC
1
15
1
14
VCC
2
NC
4
9
11
12
10
13
NC
VCCb
VREF
1
VREF
2
Det_r
ef
VCC3
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1277 B1.1
F
UNCTIONAL
B
LOCK
D
IAGRAM
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
3
2005 SST Communications Corp.
S71277-00-000
1/05
PIN ASSIGNMENTS
FIGURE 1: P
IN
A
SSIGNMENTS
FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with
several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pins.
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
NC
4
No Connection
Unconnected pins.
VCCb
5
Power Supply
PWR
Supply voltage for bias circuit
VREF1
6
PWR
1st and 2nd stage idle current control
VREF2
7
PWR
3rd stage idle current control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC3
12
Power Supply
PWR
Power supply, 3rd stage
NC
13
No Connection
Unconnected pins.
VCC2
14
Power Supply
PWR
Power supply, 2nd stage
NC
15
No Connection
Unconnected pins.
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 1277
5
6
8
16
V
C
C
1
15
14
V
C
C
2
N
C
9
11
12
10
13
N
C
V
C
C
b
V
R
E
F
1
V
R
E
F
2
D
e
t
_
r
e
f
VCC3
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1277 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
4
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm
Supply Voltage at pins 5, 12, 14, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 (V
REF1
) and pin 7 (V
REF2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units
1
: 240C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
O
PERATING
R
ANGE
Range
Ambient Temp
V
CC
Industrial
-40C to +85C
3.3V
TABLE
2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 5, 12, 14, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 24 dBm
290
mA
for 802.11g, 25 dBm
340
mA
I
CQ
Idle current for 802.11g to meet EVM<4% @ 23dBm
50
mA
I
OFF
Shut down current
0.1
A
V
REG1
Reference Voltage for 1st Stage, with 110
resistor
2.75
2.8
2.85
V
V
REG2
Reference Voltage for 2nd Stage, with 270
resistor
2.75
2.8
2.85
V
T2.0 1277
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
5
2005 SST Communications Corp.
S71277-00-000
1/05
TABLE
3: AC E
LECTRICAL
C
HARACTERISTICS
FOR
C
ONFIGURATION
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -10 dBm 11b signals
25
dBm
@ PIN = -11 dBm 11g signals
24
dBm
G
Small signal gain
35
36
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
Stability
Spurious output@ 25.5 dBm
54 Mbps OFDM signal when VSWR=6:1 all angle
-60
dBc
Output VSWR
Ruggedness
Survivable time@ 25.5 dBm (to 50
)
54 Mbps OFDM signal when VSWR=10:1 all angle
10
second
ACPR
Meet 11b spectrum mask
24
25
dBm
Meet 11g OFDM 54 MBPS spectrum mask
24
dBm
Added EVM
@ 23.5 dBm output with 11g OFDM 54 MBPS signal
4
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
-40
dBc
T3.0 1277
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
6
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C
FIGURE 2: S-P
ARAMETERS
FIGURE 3: I
N
-
BAND
R
ETURN
L
OSS
FIGURE 4: I
N
-
BAND
G
AIN
F
LATNESS
1277 S-Parms.0.0
-30
-25
-20
-1
0
-5
0
5
0
1
2
3
4
5
S22
S2 1
-60
-50
-40
-30
-20
-10
0
10
20
30
40
0
1
2
3
4
5
6
S1 2
-80
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
6
6
S11
-35
-30
-25
-20
-15
-10
-5
0
2
3
4
5
6
0
1
6
S11
-35
-30
-25
-20
-15
-10
-5
0
2.3
2.35
2.4
2.45
2.5
1277 In-band-R.0.0
S21
30
31
32
33
34
35
36
2.30
2.35
2.40
2.45
2.50
1277 In-band-G.0.0
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
7
2005 SST Communications Corp.
S71277-00-000
1/05
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: F1 = 2.45 GH
Z
, F2 = 2.451 GH
Z
FIGURE 5: G
AIN
VS
P
OUT
FIGURE 6: IM3
VS
P
OUT
FIGURE 7: I
CC
VS
P
OUT
FIGURE 8: D
ETECTORS
VS
P
OUT
Gain
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
P
OUT
(dBm)
G
a
in
(
d
B
)
1277 GainVSPout.0.0
IM3
0
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
P
OUT
(dBm)
IM
3
(
d
B
c
)
1277 IM3vsPout.0.0
Total Current Consumption
0
50
100
150
200
250
300
350
400
5
10
15
20
25
30
P
OUT
(dBm)
I
CC
(mA)
1277 IccVSPout.0.0
Det & Det_ref
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
P
OUT
(dBm)
De
t
(
V
)
1277 DetVSPout.0.0
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
8
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
= 25C, F = 2.45 GH
Z
, 54 M
BPS
802.11
G
OFDM
SIGNAL
FIGURE 9: 802.11
G
S
PECTRUM
AT
23/24
D
B
M
, DC
CURRENT
240/290
M
A
P
OUT
= 23 dBm
P
OUT
= 24 dBm
Mask
1277 Spectrum.0.0
Adde d EVM
0
2
4
6
8
10
12
14
5
10
15
20
25
P
OUT
(dBm)
EVM
(
%
)
30
1277 AddEVM.0.0
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
9
2005 SST Communications Corp.
S71277-00-000
1/05
TYPICAL PERFORMANCE CHARACTERISTICS
T
EST
C
ONDITIONS
: V
CC
= 3.3V, T
A
=25C, 1 M
BPS
802.11B CCK
SIGNAL
FIGURE 10: 802.11B S
IGNAL
O
UTPUT
M
ASK
AT
25
D
B
M
, DC
CURRENT
340
M
A
FIGURE 11: T
YPICAL
S
CHEMATIC
FOR
H
IGH
-P
OWER
, H
IGH
-E
FFICIENCY
802.11
B
/
G
A
PPLICATIONS
1277 SigOutMsk.0.0
2
5
6
7
8
9
11
16
15
Bias circuit
1
50
/150mil
50
RFOUT
100pF
100pF
47pF
2.4pF
50
/140mil
50
RFin
VREG1
VREG2
14
13
4.7 F
0.1 F
Vcc
4
12
10
pF
1000
12nH/0805
R2 270*
R1 110*
3
1000pF
0.1 F
Det_ref
Det
10pF
10pF
1277 Schematic.0.1
Suggested operation conditions:
1 V
CC
= 3.3V
2. Center slug to RF ground
3. VREG1=VREG2=2.8V with
R1=110
and R2=270
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
10
PRODUCT ORDERING INFORMATION
Valid combinations for SST12LP15
SST12LP15-QVC
SST12LP15-QVCE
SST12LP15 Evaluation Kits
SST12LP15-QVC-K
SST12LP15-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
SST12LP
15
- QVC
E
SSTxxLP
xx
-
XXX
X
Environmental Attribute
E
1
= non-Pb contact (lead) finish
Package Modifier
C = 16 contact
Package Type
QV = VQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
2 = 2.4 GHz
Product Line
1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder.
SST non-Pb solder devices are "RoHS Compliant".
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
11
2005 SST Communications Corp.
S71277-00-000
1/05
PACKAGING DIAGRAMS
16-
CONTACT
V
ERY
-
THIN
Q
UAD
F
LAT
N
O
-
LEAD
(VQFN)
SST P
ACKAGE
C
ODE
: QVC
TABLE
4: R
EVISION
H
ISTORY
Revision
Description
Date
00
S71277: SST conversion of data sheet GP1215
Jan 2005
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions.
2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain V
SS
leads.
This paddle can be soldered to the PC board; it is suggested to connect this paddle to the V
SS
of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
1.7
0.5 BSC
See notes
2 and 3
Pin #1
0.30
0.18
0.076
1.7
0.2
3.00 0.10
3.00 0.10
0.05 Max
0.45
0.35
1.00
0.80
Pin #1
TOP VIEW
BOTTOM VIEW
SIDE VIEW
1mm
Preliminary Specifications
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15
2005 SST Communications Corp.
S71277-00-000
1/05
12
CONTACT INFORMATION
Marketing
SST Communications Corp.
2951 28th Street, Ste. 2040
Santa Monica, CA 90405
Tel: 310-581-1650 x27
Fax: 310-581-1663
Sales
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
SST Macao
Les Crowder
H. H. Chang
Technical Sales Support - Major Accounts
Senior Director, Sales
1922 Colina Salida Del Sol
Room A, 8th Floor,
San Clemente, CA 92673-3652
USA
Macao Financial Centre,
Tel: 949-495-6437
No. 230-246, Rua Pequim, Macao
Cell: 714-813-6636
Tel: (853) 706-022
Fax: 949-495-6364
Fax: (853) 706-023
E-mail: lcrowder@sst.com
E-mail: hchang@sst.com
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
SST Communications Co.
Ralph Thomson
Andy Chang
Applications Manager
Director of Sales
Mark House
2F, No. 415, Tiding Blvd., Sec.2,
9-11 Queens Road
Neihu, Taipei,
Hersham KT12 5LU
UK
Taiwan, R.O.C.
Tel: +44 (0) 1869 321 431
Tel: 02-2656-2888 x220
Cell: +44 (0) 7787 508 919
Fax: 02-2656-2889
E-mail: rthomson@sst.com
E-mail: achang@sst.com
JAPAN
KOREA
SST Japan
SST Korea
Yashushi Yoshinaga
Charlie Shin
Sales Manager
Country Manager
6F Kose #2, 1-14-20 Shin-Yokohama,
Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong,
Kohoku-ku, Yokohama 222-0033
Bundang-Gu, Sungnam, Kyunggi-Do
Kanagawa, Japan
Korea, 463-020
Tel: (81) 45-471-1851
Tel: (82) 31-715-9138
Fax: (81) 45-471-3285
Fax: (82) 31-715-9137
Email: yoshi@sst.com
Email: cshin@sst.com
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 Telephone 408-735-9110 Fax 408-735-9036
www.SuperFlash.com or www.sst.com
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