6/01

307

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

2 Mbit (256K x8) Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

FEATURES:

Single Voltage Read and Write Operations

5.0V-only for SST29EE020
3.0-3.6V for SST29LE020
2.7-3.6V for SST29VE020

Superior Reliability

Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention

Low Power Consumption

Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 3.0/2.7V

Standby Current: 10 µA (typical)

Fast Page-Write Operation

128 Bytes per Page, 2048 Pages
Page-Write Cycle: 5 ms (typical)
Complete Memory Rewrite: 10 sec (typical)
Effective Byte-Write Cycle Time: 39 µs (typical)

Fast Read Access Time

5.0V-only operation: 120 and 150 ns
3.0-3.6V operation: 200 and 250 ns
2.7-3.6V operation: 200 and 250 ns

Latched Address and Data

Automatic Write Timing

Internal V

Generation

End of Write Detection

Toggle Bit
Data# Polling

Hardware and Software Data Protection

Product Identification can be accessed via
Software Operation

TTL I/O Compatibility

JEDEC Standard

Flash EEPROM Pinouts and command sets

Packages Available

32-lead PLCC
32-lead TSOP (8mm x 14mm, 8mm x 20mm)
32-pin PDIP

PRODUCT DESCRIPTION

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write
EEPROM manufactured with SST's proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE020 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE020 conform to JEDEC stan-
dard pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29EE/LE/
VE020 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 256 KBytes, can be written page-by-
page in as little as 10 seconds, when using interface fea-
tures such as Toggle Bit or Data# Polling to indicate the
completion of a Write cycle. To protect against inadvertent
write, the SST29EE/LE/VE020 have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST29EE/LE/VE020 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.

The SST29EE/LE/VE020 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE020 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE020 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.

To meet high density, surface mount requirements, the
SST29EE/LE/VE020 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.

Device Operation

The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE020 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE020 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE020 are compatible with industry standard EEPROM
pinouts and functionality.

SST29EE020 / SST29LE020 / SST29VE0202 Mb Page-Mode flash memories

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

Read

The Read operations of the SST29EE/LE/VE020 are con-
trolled by CE# and OE#, both have to be low for the system
to obtain data from the outputs. CE# is used for device
selection. When CE# is high, the chip is deselected and
only standby power is consumed. OE# is the output control
and is used to gate data from the output pins. The data bus
is in high impedance state when either CE# or OE# is high.
Refer to the Read cycle timing diagram for further details
(Figure 4).

Write

The Page-Write to the SST29EE/LE/VE020 should always
use the JEDEC Standard Software Data Protection (SDP)
three-byte command sequence. The SST29EE/LE/VE020
contain the optional JEDEC approved Software Data Pro-
tection scheme. SST recommends that SDP always be
enabled, thus, the description of the write operations will be
given using the SDP enabled format. The three-byte SDP
Enable and SDP Write commands are identical; therefore,
any time a SDP Write command is issued, Software Data
Protection is automatically assured. The first time the three-
byte SDP command is given, the device becomes SDP
enabled. Subsequent issuance of the same command
bypasses the data protection for the page being written. At
the end of the desired Page-Write, the entire device
remains protected. For additional descriptions, please see
the application notes The Proper Use of JEDEC Standard
Software Data Protection and Protecting Against Uninten-
tional Writes When Using Single Power Supply Flash
Memories.

The Write operation consists of three steps. Step 1 is the
three-byte load sequence for Software Data Protection.
Step 2 is the byte-load cycle to a page buffer of the
SST29EE/LE/VE020. Steps 1 and 2 use the same timing
for both operations. Step 3 is an internally controlled Write
cycle for writing the data loaded in the page buffer into the
memory array for nonvolatile storage. During both the SDP
three-byte load sequence and the byte-load cycle, the
addresses are latched by the falling edge of either CE# or
WE#, whichever occurs last. The data is latched by the ris-
ing edge of either CE# or WE#, whichever occurs first. The
internal Write cycle is initiated by the T

BLCO

timer after the

rising edge of WE# or CE#, whichever occurs first. The
Write cycle, once initiated, will continue to completion, typi-
cally within 5 ms. See Figures 5 and 6 for WE# and CE#
controlled Page-Write cycle timing diagrams and Figures
15 and 17 for flowcharts.

The Write operation has three functional cycles: the Soft-
ware Data Protection load sequence, the page load cycle,
and the internal Write cycle. The Software Data Protection

consists of a specific three-byte load sequence that allows
writing to the selected page and will leave the SST29EE/
LE/VE020 protected at the end of the Page-Write. The
page load cycle consists of loading 1 to 128 Bytes of data
into the page buffer. The internal Write cycle consists of the
T

BLCO

time-out and the write timer operation. During the

Write operation, the only valid reads are Data# Polling and
Toggle Bit.

The Page-Write operation allows the loading of up to 128
bytes of data into the page buffer of the SST29EE/LE/
VE020 before the initiation of the internal Write cycle. Dur-
ing the internal Write cycle, all the data in the page buffer is
written simultaneously into the memory array. Hence, the
Page-Write feature of SST29EE/LE/VE020 allow the entire
memory to be written in as little as 10 seconds. During the
internal Write cycle, the host is free to perform additional
tasks, such as to fetch data from other locations in the sys-
tem to set up the write to the next page. In each Page-Write
operation, all the bytes that are loaded into the page buffer
must have the same page address, i.e. A

through A

. Any

byte not loaded with user data will be written to FFH.

See Figures 5 and 6 for the Page-Write cycle timing dia-
grams. If after the completion of the three-byte SDP load
sequence or the initial byte-load cycle, the host loads a sec-
ond byte into the page buffer within a byte-load cycle time
(T

BLC

) of 100 µs, the SST29EE/LE/VE020 will stay in the

page load cycle. Additional bytes are then loaded consecu-
tively. The page load cycle will be terminated if no addi-
tional byte is loaded into the page buffer within 200 µs
(T

BLCO

) from the last byte-load cycle, i.e., no subsequent

WE# or CE# high-to-low transition after the last rising edge
of WE# or CE#. Data in the page buffer can be changed by
a subsequent byte-load cycle. The page load period can
continue indefinitely, as long as the host continues to load
the device within the byte-load cycle time of 100 µs. The
page to be loaded is determined by the page address of
the last byte loaded.

Software Chip-Erase

The SST29EE/LE/VE020 provide a Chip-Erase operation,
which allows the user to simultaneously clear the entire
memory array to the "1" state. This is useful when the entire
device must be quickly erased.

The Software Chip-Erase operation is initiated by using a
specific six-byte load sequence. After the load sequence,
the device enters into an internally timed cycle similar to the
Write cycle. During the Erase operation, the only valid read
is Toggle Bit. See Table 4 for the load sequence, Figure 10
for timing diagram, and Figure 19 for the flowchart.

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

Write Operation Status Detection

The SST29EE/LE/VE020 provide two software means to
detect the completion of a Write cycle, in order to optimize
the system Write cycle time. The software detection
includes two status bits: Data# Polling (DQ

) and Toggle Bit

(DQ

). The end of write detection mode is enabled after the

rising WE# or CE# whichever occurs first, which initiates
the internal Write cycle.

The actual completion of the nonvolatile write is asynchro-
nous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to con-
flict with either DQ

or DQ

. In order to prevent spurious

rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
tion is valid.

Data# Polling (DQ

)

When the SST29EE/LE/VE020 are in the internal Write
cycle, any attempt to read DQ

of the last byte loaded dur-

ing the byte-load cycle will receive the complement of the
true data. Once the Write cycle is completed, DQ

will

show true data. The device is then ready for the next opera-
tion. See Figure 7 for Data# Polling timing diagram and Fig-
ure 16 for a flowchart.

Toggle Bit (DQ

)

During the internal Write cycle, any consecutive attempts to
read DQ

will produce alternating 0s and 1s, i.e., toggling

between 0 and 1. When the Write cycle is completed, the
toggling will stop. The device is then ready for the next
operation. See Figure 8 for Toggle Bit timing diagram and
Figure 16 for a flowchart. The initial read of the Toggle Bit
will typically be a "1".

Data Protection

The SST29EE/LE/VE020 provide both hardware and soft-
ware features to protect nonvolatile data from inadvertent
writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle.

Power Up/Down Detection: The Write operation is

inhibited when V

is less than 2.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.

Software Data Protection (SDP)

The SST29EE/LE/VE020 provide the JEDEC approved
optional Software Data Protection scheme for all data alter-
ation operations, i.e., Write and Chip-Erase. With this
scheme, any Write operation requires the inclusion of a
series of three byte-load operations to precede the data
loading operation. The three byte-load sequence is used to
initiate the Write cycle, providing optimal protection from
inadvertent write operations, e.g., during the system power-
up or power-down. The SST29EE/LE/VE020 are shipped
with the Software Data Protection disabled.

The software protection scheme can be enabled by apply-
ing a three-byte sequence to the device, during a page-
load cycle (Figures 5 and 6). The device will then be auto-
matically set into the data protect mode. Any subsequent
Write operation will require the preceding three-byte
sequence. See Table 4 for the specific software command
codes and Figures 5 and 6 for the timing diagrams. To set
the device into the unprotected mode, a six-byte sequence
is required. See Table 4 for the specific codes and Figure 9
for the timing diagram. If a write is attempted while SDP is
enabled the device will be in a non-accessible state for
~300 µs. SST recommends Software Data Protection
always be enabled. See Figure 17 for flowcharts.

The SST29EE/LE/VE020 Software Data Protection is a
global command, protecting all pages in the entire memory
array once enabled (or disabled). Therefore using SDP for
a single Page-Write will enable SDP for the entire array.
Single pages by themselves cannot be SDP enabled or
disabled.

Single power supply reprogrammable nonvolatile memo-
ries may be unintentionally altered. SST strongly recom-
mends that Software Data Protection (SDP) always be
enabled. The SST29EE/LE/VE020 should be programmed
using the SDP command sequence. SST recommends the
SDP Disable Command Sequence not be issued to the
device prior to writing.

Please refer to the following Application Notes for more
information on using SDP:

Protecting Against Unintentional Writes When
Using Single Power Supply Flash Memories

The Proper Use of JEDEC Standard Software
Data Protection

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

Product Identification

The product identification mode identifies the device as the
SST29EE/LE/VE020 and manufacturer as SST. This mode
is accessed via software. For details, see Table 4, Figure
11 for the software ID entry and read timing diagram, and
Figure 18 for the ID entry command sequence flowchart.

Product Identification Mode Exit

In order to return to the standard read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Software ID Exit (reset) opera-
tion, which returns the device to the Read operation. The
Reset operation may also be used to reset the device to the
Read mode after an inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. See Table 4 for software command
codes, Figure 12 for timing waveform, and Figure 18 for a
flowchart.

FIGURE 1: P

SSIGNMENTS

FOR

32-

LEAD

PLCC

TABLE

1: P

RODUCT

DENTIFICATION

Address

Data

Manufacturer's ID

0000H

BFH

Device ID

SST29EE020

0001H

10H

SST29LE020

0001H

12H

SST29VE020

0001H

12H

T1.3 307

Y-Decoder and Page Latches

I/O Buffers and Data Latches

307 ILL B1.1

Address Buffer & Latches

X-Decoder

DQ7 - DQ0

A17 - A0

WE#

OE#

CE#

SuperFlash

Memory

Control Logic

UNCTIONAL

LOCK

IAGRAM

DQ0

A14

A13

A11

OE#

A10

CE#

DQ7

4 3 2 1 32 31 30

A12

A15

A16

WE#

A17

32-lead PLCC

Top View

307 ILL F02.3

14 15 16 17 18 19 20

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

FIGURE 2: P

SSIGNMENTS

FOR

32-

LEAD

TSOP

FIGURE 3: P

SSIGNMENTS

FOR

32-

PIN

PDIP

A11

A9
A8

A13
A14
A17

WE#

VDD

A16
A15
A12

A7
A6
A5
A4

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

307 ILL F01.2

Standard Pinout

Top View

Die Up

32-pin

PDIP

Top View

307 ILL F19.0

A16

A15

A12

DQ0

DQ1

DQ2

VSS

VDD
WE#

A17

A14

A13

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

TABLE

2: P

ESCRIPTION

Symbol

Pin Name

Functions

-A

Row Address Inputs

To provide memory addresses. Row addresses define a page for a Write cycle.

-A

Column Address Inputs

Column Addresses are toggled to load page data

-DQ

Data Input/output

To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.

CE#

Chip Enable

To activate the device when CE# is low.

OE#

Output Enable

To gate the data output buffers.

WE#

Write Enable

To control the Write operations.

Power Supply

To provide:

5.0V supply (±10%) for SST29EE020
3.0V supply (3.0-3.6V) for SST29LE020
2.7V supply (2.7-3.6V) for SST29VE020

Ground

No Connection

Unconnected pins.

T2.2 307

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

TABLE

3: O

PERATION

ODES

ELECTION

Mode

CE#

OE#

WE#

Address

Read

OUT

Page-Write

Standby

High Z

Write Inhibit

High Z/ D

OUT

High Z/ D

OUT

Software Chip-Erase

IN,

See Table 4

Product Identification

Software Mode

Manufacturer's ID (BFH)
Device ID

See Table 4

SDP Enable Mode

See Table 4

SDP Disable Mode

See Table 4

T3.3 307

1. X can be V

or V

, but no other value

2. Device ID = 10H for SST29EE020 and 12H for SST29LE/VE020

TABLE

4: S

OFTWARE

OMMAND

EQUENCE

Command
Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr

1. Address format A

-A

(Hex), Address A

can be V

or V

, but no other value.

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Software
Data Protect Enable
& Page-Write

5555H

AAH

2AAAH

55H

5555H

A0H

Addr

2. Page-Write consists of loading up to 128 Bytes (A

-A

)

Data

Software
Data Protect Disable

5555H

AAH

2AAAH

55H

5555H

80H

5555H

AAH

2AAAH

55H

5555H

20H

Software Chip-Erase

3. The software Chip-Erase function is not supported by the industrial temperature part.

Please contact SST if you require this function for an industrial temperature part.

5555H

AAH

2AAAH

55H

5555H

80H

5555H

AAH

2AAAH

55H

5555H

10H

Software ID Entry

4,5

4. The device does not remain in Software Product ID Mode if powered down.
5. With A

-A

=0;

SST Manufacturer's ID= BFH, is read with A

= 0,

SST29EE020 Device ID = 10H, is read with A

= 1

SST29LE/VE020 Device ID = 12H, is read with A

= 1

5555H

AAH

2AAAH

55H

5555H

90H

Software ID Exit

5555H

AAH

2AAAH

55H

5555H

F0H

Alternate
Software ID Entry

6. Alternate six-byte Software Product ID Command Code

Note: This product supports both the JEDEC standard three-byte command code sequence and SST's original six-byte command code

sequence. For new designs, SST recommends that the three-byte command code sequence be used.

5555H

AAH

2AAAH

55H

5555H

80H

5555H

AAH

2AAAH

55H

5555H

60H

T4.2 307

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V

+ 0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to V

+ 1.0V

Voltage on A

Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V

Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C

Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C

Output Short Circuit Current

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

1. Outputs shorted for no more than one second. No more than one output shorted at a time.

PERATING

ANGE

FOR

SST29EE020

Range

Ambient Temp

Commercial

0°C to +70°C

5.0V±10%

Industrial

-40°C to +85°C

5.0V±10%

PERATING

ANGE

FOR

SST29LE020

Range

Ambient Temp

Commercial

0°C to +70°C

3.0-3.6V

Industrial

-40°C to +85°C

3.0-3.6V

PERATING

ANGE

FOR

SST29VE020

Range

Ambient Temp

Commercial

0°C to +70°C

2.7-3.6V

Industrial

-40°C to +85°C

2.7-3.6V

AC C

ONDITIONS

EST

Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns

Output Load . . . . . . . . . . . . . . . . . . . . . 1 TTL Gate and C

= 100 pF

See Figures 13 and 14

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

TABLE

5: DC O

PERATING

HARACTERISTICS

= 5.0V±10%

FOR

SST29EE020

Symbol

Parameter

Limits

Test Conditions

Min

Max

Units

Power Supply Current

Address input=V

, at f=1/T

Min,

Max

Read

CE#=OE#=V

, WE#=V

, all I/Os open

Write

CE#=WE#=V

, OE#=V

, V

Max

SB1

Standby V

Current

(TTL input)

CE#=OE#=WE#=V

, V

Max

SB2

Standby V

Current

(CMOS input)

µA

CE#=OE#=WE#=V

-0.3V, V

Max

Input Leakage Current

µA

=GND to V

, V

Max

Output Leakage Current

µA

OUT

=GND to V

, V

Max

Input Low Voltage

0.8

Min

Input High Voltage

2.0

Max

Output Low Voltage

0.4

=2.1 mA, V

Min

Output High Voltage

2.4

=-400 µA, V

Min

T5.2 307

TABLE

6: DC O

PERATING

HARACTERISTICS

= 3.0-3.6V

FOR

SST29LE020

AND

2.7-3.0V

FOR

SST29VE020

Symbol

Parameter

Limits

Test Conditions

Min

Max

Units

Power Supply Current

Address input=V

, at f=1/T

Min,

Max

Read

CE#=OE#=V

, WE#=V

, all I/Os open

Write

CE#=WE#=V

, OE#=V

, V

Max

SB1

Standby V

Current

(TTL input)

CE#=OE#=WE#=V

, V

Max

SB2

Standby V

Current

(CMOS input)

µA

CE#=OE#=WE#=V

-0.3V, V

Max

Input Leakage Current

µA

=GND to V

, V

Max

Output Leakage Current

µA

OUT

=GND to V

, V

Max

Input Low Voltage

0.8

Min

Input High Voltage

2.0

Max

Output Low Voltage

0.4

=100 µA, V

Min

Output High Voltage

2.4

=-100 µA, V

Min

T6.2 307

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

TABLE

7: R

ECOMMENDED

YSTEM

OWER

IMINGS

Symbol

Parameter

Minimum

Units

PU-READ

Power-up to Read Operation

100

µs

PU-WRITE

Power-up to Write Operation

T7.1 307

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE

8: C

APACITANCE

(Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

I/O

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance

I/O

= 0V

12 pF

Input Capacitance

= 0V

6 pF

T8.0 307

TABLE

9: R

ELIABILITY

HARACTERISTICS

Symbol

Parameter

Minimum Specification

Units

Test Method

END

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance

10,000

Cycles

JEDEC Standard A117

Data Retention

100

Years

JEDEC Standard A103

LTH

Latch Up

100

JEDEC Standard 78

T9.5 307

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

AC CHARACTERISTICS

TABLE 10: R

EAD

YCLE

IMING

ARAMETERS

FOR

SST29EE020

Symbol

Parameter

SST29EE020-120

SST29EE020-150

Units

Min

Max

Min

Max

Read Cycle Time

120

150

Chip Enable Access Time

120

150

Address Access Time

120

150

Output Enable Access Time

CLZ

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

OLZ

OE# Low to Active Output

CHZ

CE# High to High-Z Output

OHZ

OE# High to High-Z Output

Output Hold from Address Change

T10.4 307

TABLE 11: R

EAD

YCLE

IMING

ARAMETERS

FOR

SST29LE020

Symbol

Parameter

SST29LE020-200

SST29LE020-250

Units

Min

Max

Min

Max

Read Cycle Time

200

250

Chip Enable Access Time

200

250

Address Access Time

200

250

Output Enable Access Time

100

120

CLZ

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

OLZ

OE# Low to Active Output

CHZ

CE# High to High-Z Output

OHZ

OE# High to High-Z Output

Output Hold from Address Change

T11.1 307

TABLE 12: R

EAD

YCLE

IMING

ARAMETERS

FOR

SST29VE020

Symbol

Parameter

SST29VE020-200

SST29VE020-250

Units

Min

Max

Min

Max

Read Cycle Time

200

250

Chip Enable Access Time

200

250

Address Access Time

200

250

Output Enable Access Time

100

120

CLZ

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

OLZ

OE# Low to Active Output

CHZ

CE# High to High-Z Output

OHZ

OE# High to High-Z Output

Output Hold from Address Change

T12.1 307

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

TABLE 13: P

AGE

-W

RITE

YCLE

IMING

ARAMETERS

Symbol

Parameter

SST29EE020

SST29LE/VE020

Units

Min

Max

Min

Max

Write Cycle (Erase and Program)

Address Setup Time

Address Hold Time

WE# and CE# Setup Time

WE# and CE# Hold Time

OES

OE# High Setup Time

OEH

OE# High Hold Time

CE# Pulse Width

120

WE# Pulse Width

120

Data Setup Time

Data Hold Time

BLC

Byte Load Cycle Time

0.05

100

0.05

100

µs

BLCO

Byte Load Cycle Time

200

µs

IDA

Software ID Access and Exit Time

µs

SCE

Software Chip-Erase

T13.5307

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

Valid combinations for SST29EE020

SST29EE020-120-4C-NH

SST29EE020-120-4C-WH

SST29EE020-120-4C-EH

SST29EE020-120-4C-PH

SST29EE020-120-4I-NH

SST29EE020-120-4I-WH

SST29EE020-120-4I-EH

SST29EE020-150-4C-U2

Valid combinations for SST29LE020

SST29LE020-200-4C-NH

SST29LE020-200-4C-WH

SST29LE020-200-4C-EH

SST29LE020-200-4I-NH

SST29LE020-200-4I-WH

SST29LE020-200-4I-EH

SST29LE020-250-4C-U2

Valid combinations for SST29VE020

SST29VE020-200-4C-NH

SST29VE020-200-4C-WH

SST29VE020-200-4C-EH

SST29VE020-200-4I-NH

SST29VE020-200-4I-WH

SST29VE020-200-4I-EH

SST29VE020-250-4C-U2

Note:

Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.

Note:

The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST, if you require this function for an industrial temperature part.

Data Sheet

2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

PACKAGING DIAGRAMS

32-

LEAD

LASTIC

EAD

HIP

ARRIER

(PLCC)

SST P

ACKAGE

ODE

: NH

32-

LEAD

HIN

MALL

UTLINE

ACKAGE

(TSOP) 8

SST P

ACKAGE

ODE

: WH

.030
.040

.013
.021

.490
.530

.075
.095

.015 Min.

.125
.140

TOP VIEW

SIDE VIEW

BOTTOM VIEW

.026
.032

.400
BSC

32.PLCC.NH-ILL.2

Note:

1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (min/max).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.

4. Coplanarity: 4 mils.

.050
BSC.

.026
.032

.023
.029

.447
.453

.042
.048

Optional

Pin #1 Identifier

.547
.553

.585
.595

.485
.495

.020 R.
MAX.

.106
.112

x 30°

32.TSOP-WH-ILL.4

Note:

1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (min/max).
3. Coplanarity: 0.1 (±.05) mm.
4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.

8.10
7.90

.270
.170

1.05
0.95

.50

BSC

0.15
0.05

12.50
12.30

Pin # 1 Identifier

14.20
13.80

0.70
0.50

Data Sheet

2 Mbit Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

S71062-06-000

6/01

307

32-

LEAD

HIN

MALL

UTLINE

ACKAGE

(TSOP) 8

SST P

ACKAGE

ODE

: EH

32-

PIN

LASTIC

UAL

-L

INE

ACKAGE

(PDIP)

SST P

ACKAGE

ODE

: PH

32.TSOP-EH-ILL.4

Note:

1. Complies with JEDEC publication 95 MO-142 BD dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (min/max).
3. Coplanarity: 0.1 (±.05) mm.
4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.

8.10
7.90

.27
.17

1.05
0.95

.50

BSC

0.15
0.05

18.50
18.30

20.20
19.80

0.70
0.50

Pin # 1 Identifier

32.pdipPH-ILL.2

Pin #1 Identifier

Base Plane

Seating Plane

Note:

1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (min/max).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.

.170
.200

7°

4 PLCS.

.600 BSC

.100 BSC

.120
.150

.016
.022

.045
.065

.070
.080

.015
.050

.065
.075

1.645
1.655

.008
.012

0°

15°

.600
.625

.530
.550

Silicon Storage Technology, Inc. · 1171 Sonora Court · Sunnyvale, CA 94086 · Telephone 408-735-9110 · Fax 408-735-9036

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SST29EF010-250-4C-EH

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SST29EF010-250-4C-EH