The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
Product Description
EDS-100634 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
SGA-3363
DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 15.9 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
Operates From Single Supply
Low Thermal Resistance Package
Stanford Microdevices SGA-3363 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 35mA , the SGA-3363 typically provides +25.4 dBm output
IP3, 17.3 dB of gain, and +11.6 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
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/
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5
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2
Test Conditions:
V
S
= 5 V
I
D
= 35 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
R
BIAS
= 68 Ohms
T
L
= 25C
Z
S
= Z
L
= 50 Ohms
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
0
5
10
15
20
0
1
2
3
4
5
6
Frequency (GHz)
Ga
in
(
d
B
)
-40
-30
-20
-10
0
Return Los
s
(dB)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
2
EDS-100634 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
SGA-3363 DC-5500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
Frequency (MHz)
Frequency (MHz)
V
S
= 8 V
I
D
= 80 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms
T
L
= 25C
Z
S
= Z
L
= 50 Ohms
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8
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3
Frequency (MHz)
Test Conditions:
V
S
= 5 V
I
D
= 35 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
R
BIAS
= 68 Ohms
T
L
= 25C
Z
S
= Z
L
= 50 Ohms
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
N
o
i
s
e F
i
gur
e (
d
B)
15
20
25
30
35
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
OI
P
3
(dBm
)
5
7
9
11
13
15
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P
1dB
(d
B
m
)
T
L
=+25C
T
L
=+25C
T
L
=+25C
OIP
3
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
P
1dB
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
Absolute Maximum Ratings
Noise Figure vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
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3
EDS-100634 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
SGA-3363 DC-5500 MHz Cascadable MMIC Amplifier
-30
-25
-20
-15
-10
0
1
2
3
4
5
6
Frequency (GHz)
S
12
(d
B)
+25C
-40C
+85C
0
5
10
15
20
0
1
2
3
4
5
6
Frequency (GHz)
S
21
(d
B
)
+25C
-40C
+85C
-40
-30
-20
-10
0
0
1
2
3
4
5
6
Frequency (GHz)
S
22
(d
B)
+25C
-40C
+85C
T
L
T
L
T
L
-40
-30
-20
-10
0
0
1
2
3
4
5
6
Frequency (GHz)
S
11
(d
B
)
+25C
-40C
+85C
T
L
|
S
11
|
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
|
S
21
|
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
NOTE: Full S-parameter data available at www.stanfordmicro.com
|
S
12
|
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
|
S
22
|
vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
4
EDS-100634 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
SGA-3363 DC-5500 MHz Cascadable MMIC Amplifier
1 uF
R
BIAS
1000 pF
C
B
C
B
C
D
L
C
V
S
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5
1
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Basic Application Circuit
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RF out
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C
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C
D
V
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R
BIAS
L
C
3
4,5
6
1,2
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
1000
pF
SGA-3363
Application Circuit Element Values
Part Number Ordering Information
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The part will be marked with an A33 designator on
the top surface of the package.
Part Identification Marking
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
A33
6 5 4
1 2 3
#
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