The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no
responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in
life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
Abstract
Stanford Microdevices' SGA-9289 is a high
performance SiGe amplifier designed for operation
from DC to 3500 MHz. The amplifier is manufactured
using the latest Silicon Germanium Heterostructure
Bipolar Transistor (SiGe HBT) process. The process
has a V
BCEO
=8V and an f
T
=25 GHz. The SiGe HBT
process makes the SGA-9289 a very cost-effective
solution for applications requiring high linearity at
moderate biasing levels. This application note
illustrates several application circuits for key frequency
bands in the 800-2500 MHz spectrum.
Introduction
The application circuits were designed to achieve the
optimum combination of P
1dB
and OIP
3
while
maintaining flat gain and reasonable return losses.
Special consideration was given to insure amplifier
stability at low frequencies where the device exhibits
high gain. These designs were created to illustrate the
general performance capabilities of the device under
CW conditions. Users may wish to modify these
designs to achieve optimum performance under
specific input conditions and system requirements.
The circuits contain only surface mountable devices
and were designed with automated manufacturing
requirements in mind. All recommended components
are standard values available from multiple
manufacturers. The components specified in the bill of
materials (BOM) have known parasitics, which in some
cases are critical to the circuit's performance.
Deviating from the recommended BOM may result in a
performance shift due to varying parasitics primarily
in the inductors and capacitors.
Biasing Techniques
These SiGe HBT amplifiers exhibit a "soft" breakdown
effect (V
BCEO
=7.5V minimum) which allows for large
signal operation at V
CE
=5V. The user should insure
that under large signal conditions the source and load
impedances presented to the device don't result in
excessive collector currents near breakdown. Small
signal operation with V
CE
<7V is acceptable.
SGA-9289
Silicon Germanium HBT Amplifier
Product Features
DC-3500 MHz Operation
High Output IP3, +41.5 dBm Typical at 1.96 GHz
11.0 dB Gain Typical at 1.96 GHz
28.6 dBm P1dB Typical at 1.96 GHz
Cost Effective
Applications
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
r
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Absolute Maximum Ratings
2
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
All HBT amplifiers are subject to device current
variation due to the decreasing nature of the internal
V
BE
with increasing temperature. In the absence of an
active bias circuit or resistive feedback, the decreasing
V
BE
will result in increased base and collector
currents. As the collector current continues to increase
under constant V
CE
conditions the device may
eventually exceed its maximum dissipated power limit
resulting in permanent device damage. The designs
included in this application note contain passive bias
circuits that stabilize the device current over
temperature and desensitize the circuit to device
process variation.
The passive bias circuits used in these designs include
a dropping resistor in the collector bias line and a
voltage divider from collector-to-base. Using this
scheme the amplifier can be biased from a single
supply voltage. The collector-dropping resistor is sized
to drop 2-3V depending on the desired V
CE
. The
voltage divider from collector-to-base, in conjunction
with the dropping resistor, will stabilize the device
current over temperature. Configuring the voltage
divider such that the shunt current is 5-10 times larger
than the desired base current desensitizes the circuit
to device process variation. These two feedback
mechanisms are sufficient to insure consistent
performance over temperature and device process
variations. Note that the voltage drop is clearly
dependent on the nominal collector current and can be
adjusted to generate the desired V
CE
from a fixed
supply rail. The user should test the circuit over the
operational extremes to guarantee adequate
performance if the feedback mechanisms are reduced.
An active bias circuit can be implemented if the user
does not wish to sacrifice the voltage required by the
aforementioned passive circuit. There are various
active bias schemes suitable for HBTs. The user
should choose an active bias circuit that best meets
his cost, complexity and performance requirements.
Circuit Details
SMDI will provide the detailed layout (AutoCad format)
to users wishing to use the exact same layout and
PCB material shown in the following circuits. The
circuits recommended within this application note were
designed using the following PCB stack up:
Material: GETEK
ML200C
Core thickness: 0.031"
Copper cladding: 1oz both sides
Dielectric constant: 4.1
Dielectric loss tangent: 0.0089 (@ 1 GHz)
Customers not wishing to use the exact material and
layouts shown in this application note can design their
own PCB using the critical transmission line
impedances and phase lengths shown in the BOMs
and layouts.
Vcc
V
DROP
+
-
I
c
V
CE
+
-
I
B
I
SHUNT
Passive Bias Circuit Topology
3
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
.
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870-960 MHz Application Circuit (V
CE
=3V, Icq=315mA, 25C)
Z6
Z2
Z3
Z5
R3
SGA-9289
L3
C6
C7
C8
+5 V
R5
R2
C1
Z1
L2
C3
C2
L1
R4
C4
Z7
C10
C9
Z8
R1
C5
Z4
RFin
RFout
R1
R2
R3
R4
R5
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
L1
L2
L3
Vs=+5V
SGA-9289
SGA-9289, Vce=3V, 870-960 MHz Apps Circuit
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-100608-B
.
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http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
-35
-30
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
1
5
10
15
20
25
30
0
4
8
12
16
300
310
320
330
340
350
22.5
23.5
24.5
25.5
26.5
27.5
0.87
0.90
0.93
0.96
37
38
39
40
41
42
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2
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4
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0.90
0.93
0.96
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18
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1
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-24
-18
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36
37
38
39
40
41
6
8
10
12
14
16
Typical Performance - 870-960 MHz Application Circuit (V
CE
=3V, I
CQ
=315mA, 25C)
Pout / Tone (dBm)
OIP3 (dBm)
OIP3 vs Tone Level
Frequency (GHz)
P1dB (dBm)
OIP3 (dBm)
P1dB, OIP3 vs Frequency
Frequency (GHz)
IRL, ORL (dB)
S-Parameters vs Frequency
Pin (dBm)
Pout (dBm), Gain (dB)
Ic (mA)
Pout, Gain, Ic vs Pin
Frequency (GHz)
Gain (dB)
Isolation (dB)
S-Parameters vs Frequency
Ic
Gain
Pout
ORL
IRL
OIP3 @ 10 dBm/tone
P1dB
Gain
Isolation
Frequency (GHz)
Noise Figure (dB)
Noise Figure vs Frequency
q
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r
F
)
z
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(
B
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m
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(
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(
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B
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(
1
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B
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3
8
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1
0
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3
3
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9
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6
.
2
5
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
.
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870-960 MHz Application Circuit (V
CE
=5V, Icq=340mA, 25C)
Z6
Z3
Z4
Z5
Z7
C5
R3
SGA-9289
C10
L3
C8
C7
+ 8 V
R5
C9
R6
C1
Z1
L2
C3
R1
L1
C2
R4
R2
C4
Z2
C6
RFin
RFout
C1
L3
C5
L1
C9
C10
R1
C2
L2
C4
C3
SGA-9289
R2
R3
R5
C6
C7
C8
Vs=+8V
R4
R6
SGA-9289, Vce=5V, 870-960 MHz Apps Circuit
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-100608-B
6
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
5
10
15
20
25
30
35
-1
2
5
8
11
14
320
330
340
350
360
370
-35
-30
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
1
10
12
14
16
18
20
0.8
0.85
0.9
0.95
1
-30
-24
-18
-12
-6
0
25
26
27
28
29
30
0.87
0.9
0.93
0.96
40
41
42
43
44
45
0
1
2
3
4
5
0.87
0.9
0.93
0.96
38
39
40
41
42
43
6
8
10
12
14
16
Typical Performance - 870-960 MHz Application Circuit (V
CE
=5V, I
CQ
=340mA, 25C)
Pout / Tone (dBm)
OIP3 (dBm)
OIP3 vs Tone Level
Frequency (GHz)
P1dB (dBm)
OIP3 (dBm)
P1dB, OIP3 vs Frequency
Frequency (GHz)
IRL, ORL (dB)
S-Parameters vs Frequency
Pin (dBm)
Pout (dBm), Gain (dB)
Ic (mA)
Pout, Gain, Ic vs Pin
Frequency (GHz)
Gain (dB)
Isolation (dB)
S-Parameters vs Frequency
Gain
Pout
Ic
OIP3 @ 13 dBm/tone
P1dB
ORL
IRL
Isolation
Gain
Frequency (GHz)
Noise Figure (dB)
Noise Figure vs Frequency
q
e
r
F
)
z
H
G
(
B
d
1
P
)
m
B
d
(
3
P
I
O
)
m
B
d
(
n
i
a
G
)
B
d
(
1
1
S
)
B
d
(
2
2
S
)
B
d
(
F
N
)
B
d
(
0
8
8
.
0
2
.
9
2
4
.
1
4
2
.
8
1
6
.
7
1
-
4
.
6
1
-
8
.
2
5
1
9
.
0
2
.
9
2
3
.
1
4
9
.
7
1
8
.
5
2
-
1
.
5
1
-
9
.
2
5
4
9
.
0
0
.
9
2
9
.
0
4
7
.
7
1
2
.
5
2
-
3
.
4
1
-
9
.
2
7
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
.
s
e
D
f
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1
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p
5
.
1
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ir
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8
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7
,
2
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1
.
0
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ir
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s
8
1
H
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M
m
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R
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,
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,
3
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p
2
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4
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2
.
2
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ir
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m
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R
8
C
F
p
0
0
0
1
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e
ir
e
s
8
1
H
C
M
m
h
o
R
2
,
1
L
H
n
2
2
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e
ir
e
s
-
8
0
6
1
L
L
O
K
O
T
1
R
s
m
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o
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e
ir
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2
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s
m
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o
6
5
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m
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3
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5
,
4
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1
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T
A
W
1
g
k
p
2
1
5
2
.
s
e
D
.
f
e
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e
u
l
a
V
1
Z
z
H
M
0
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9
1
@
.
g
e
d
7
.
7
,
s
m
h
O
0
5
2
Z
z
H
M
0
6
9
1
@
.
g
e
d
9
.
6
,
s
m
h
O
0
5
3
Z
z
H
M
0
6
9
1
@
.
g
e
d
2
.
7
,
s
m
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0
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4
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z
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M
0
6
9
1
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e
d
3
.
4
1
,
s
m
h
O
0
5
5
Z
z
H
M
0
6
9
1
@
.
g
e
d
8
.
3
4
,
s
m
h
O
0
5
1930-1990 MHz Application Circuit (V
CE
=3V, Icq=315mA, 25C)
C1
Z1
Z5
Z2
Z3
Z4
C4
L1
R3
SGA-9289
C9
L2
C5
C3
C2
R1
R2
C6
R5
R4
+ 5 V
C7
C8
RFin
RFout
C9
C4
C1
L1
R1
C3
L2
SGA-9289
C2
R2
R3
R4
C5
C7
C8
Vs=+5V
C6
SGA-9289, Vce=3V, 1930-1990 MHz Apps Circuit
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-100608-B
8
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
-35
-30
-25
-20
-15
-10
-5
0
1.8
1.9
2.0
2.1
5
7
9
11
13
15
1.8
1.9
2.0
2.1
-30
-24
-18
-12
-6
0
21.5
22.5
23.5
24.5
25.5
26.5
1.93
1.95
1.97
1.99
37
38
39
40
41
42
0
1
2
3
4
5
1.93
1.95
1.97
1.99
36
37
38
39
40
41
6
8
10
12
14
16
5
10
15
20
25
30
0
5
10
15
20
290
300
310
320
330
340
Typical Performance - 1930-1990 MHz Application Circuit (V
CE
=3V, I
CQ
=315mA, 25C)
Frequency (GHz)
P1dB (dBm)
OIP3 (dBm)
P1dB, OIP3 vs Frequency
Frequency (GHz)
IRL, ORL (dB)
S-Parameters vs Frequency
Pin (dBm)
Pout (dBm), Gain (dB)
Ic (mA)
Pout, Gain, Ic vs Pin
Frequency (GHz)
Gain (dB)
Isolation (dB)
S-Parameters vs Frequency
ORL
IRL
Pout
Gain
Ic
OIP3 @ 10 dBm/tone
P1dB
Gain
Isolation
Pout / Tone (dBm)
OIP3 (dBm)
OIP3 vs Tone Level
Frequency (GHz)
Noise Figure (dB)
Noise Figure vs Frequency
q
e
r
F
)
z
H
G
(
B
d
1
P
)
m
B
d
(
3
P
I
O
)
m
B
d
(
n
i
a
G
)
B
d
(
1
1
S
)
B
d
(
2
2
S
)
B
d
(
F
N
)
B
d
(
3
9
.
1
9
.
5
2
3
.
9
3
1
.
1
1
9
.
6
1
-
7
.
5
1
-
8
.
2
6
9
.
1
0
.
6
2
3
.
9
3
0
.
1
1
5
.
0
2
-
5
.
5
1
-
9
.
2
9
9
.
1
0
.
6
2
4
.
8
3
9
.
0
1
4
.
7
2
-
9
.
5
1
-
9
.
2
9
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
1930-1990 MHz Application Circuit (V
CE
=5V, Icq=340mA, 25C)
.
s
e
D
f
e
R
e
u
l
a
V
r
e
b
m
u
N
t
r
a
P
9
,
5
,
3
,
1
C
F
p
2
1
s
e
ir
e
s
8
1
H
C
M
m
h
o
R
7
,
2
C
F
u
1
.
0
s
e
ir
e
s
8
1
H
C
M
m
h
o
R
4
C
F
p
7
.
2
s
e
ir
e
s
8
1
H
C
M
m
h
o
R
6
C
F
p
8
.
1
s
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s
8
1
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M
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p
0
0
0
1
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s
8
1
H
C
M
m
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R
2
,
1
L
H
n
2
2
s
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s
8
0
6
1
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L
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K
O
T
1
R
s
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0
1
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s
8
1
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M
m
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R
2
R
s
m
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o
1
5
s
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s
8
1
H
C
M
m
h
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R
3
R
s
m
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o
6
1
s
e
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e
s
8
1
H
C
M
m
h
o
R
4
R
s
m
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o
0
4
2
s
e
ir
e
s
8
1
H
C
M
m
h
o
R
5
R
s
m
h
o
6
1
T
T
A
W
1
g
k
p
2
1
5
2
6
R
s
m
h
o
8
1
T
T
A
W
1
g
k
p
2
1
5
2
.
s
e
D
.
f
e
R
e
u
l
a
V
1
Z
z
H
M
0
6
9
1
@
.
g
e
d
1
.
7
4
,
s
m
h
O
0
5
2
Z
z
H
M
0
6
9
1
@
.
g
e
d
7
,
s
m
h
O
0
5
3
Z
z
H
M
0
6
9
1
@
.
g
e
d
2
.
7
,
s
m
h
O
0
5
4
Z
z
H
M
0
6
9
1
@
.
g
e
d
3
.
4
1
,
s
m
h
O
0
5
5
Z
z
H
M
0
6
9
1
@
.
g
e
d
8
.
4
,
s
m
h
O
0
5
6
Z
z
H
M
0
6
9
1
@
.
g
e
d
2
.
2
4
,
s
m
h
O
0
5
C1
Z1
Z5
Z2
Z3
Z4
Z6
C4
L1
R4
SGA-9289
C9
L2
+ 8 V
R5
C6
C3
C2
R1
R2
R3
R6
C5
C7
C8
RFin
RFout
C2
L1
C5
C9
C1
SGA-9289
R1
L2
C4
C3
C6
R2
R3
C7
R5
R4
C8
Vs=+8V
SGA-9289, Vce=5V, 1930-1990 MHz Apps Circuit
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-100608-B
10
http://www.stanfordmicro.com
Phone: (800) SMI-MMIC
522 Almanor Ave., Sunnyvale, CA 94085
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022
SGA-9289 Amplifier Application Circuits
-30
-25
-20
-15
-10
-5
0
1.8
1.85
1.9
1.95
2
2.05
2.1
5
11
17
23
29
35
8
10
12
14
16
18
20
22
320
330
340
350
360
370
25
26
27
28
29
30
1.93
1.95
1.97
1.99
39
40
41
42
43
44
1
2
3
4
5
6
1.93
1.95
1.97
1.99
5
7
9
11
13
15
1.8
1.85
1.9
1.95
2
2.05
2.1
-30
-24
-18
-12
-6
0
35
37
39
41
43
45
8
10
12
14
16
18
20
Typical Performance - 1930-1990 MHz Application Circuit (V
CE
=5V, I
CQ
=340mA, 25C)
Pout / Tone (dBm)
OIP3 (dBm)
OIP3 vs Tone Level
Frequency (GHz)
P1dB (dBm)
OIP3 (dBm)
P1dB, OIP3 vs Frequency
Frequency (GHz)
IRL, ORL (dB)
S-Parameters vs Frequency
Pin (dBm)
Pout (dBm), Gain (dB)
Ic (mA)
Pout, Gain, Ic vs Pin
Frequency (GHz)
Gain (dB)
Isolation (dB)
S-Parameters vs Frequency
Isolation
Gain
P1dB
OIP3 @ 13 dBm/tone
Pout
Gain
Ic
ORL
IRL
Frequency (GHz)
Noise Figure (dB)
Noise Figure vs Frequency
q
e
r
F
)
z
H
G
(
B
d
1
P
)
m
B
d
(
3
P
I
O
)
m
B
d
(
n
i
a
G
)
B
d
(
1
1
S
)
B
d
(
2
2
S
)
B
d
(
F
N
)
B
d
(
3
9
.
1
5
.
8
2
3
.
1
4
1
.
1
1
1
.
4
1
-
8
.
9
1
-
0
.
4
6
9
.
1
5
.
8
2
4
.
1
4
9
.
0
1
1
.
5
1
-
5
.
9
1
-
1
.
4
9
9
.
1
7
.
8
2
4
.
1
4
7
.
0
1
9
.
4
1
-
1
.
9
1
-
3
.
4
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