Product Description
Stanford Microdevices' SNA-276 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline package. This amplifier provides 16dB of
gain when biased at 50mA and 4V.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
chip form (SNA-200), its small size (0.33mm x 0.33mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.
The SNA-276 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-276
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
16dB Gain, +14dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Stripline Mount Ceramic Package
Hermetically Sealed
Applications
Narrow and Broadband Linear Amplifiers
Commercial and Industrial Applications
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25
C
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s :
I d = 5 0 m A , Z
0
= 5 0 O h m s
U n i t s
M i n .
T y p .
M a x .
G
P
S m a l l S i g n a l P o w e r G a i n
f = 0 . 1 - 2 . 0
G H z
f = 2 . 0 - 4 . 0 G H z
f = 4 . 0 - 6 . 5 G H z
d B
d B
d B
1 5 . 0
1 4 . 0
1 3 . 0
1 6 . 0
1 5 . 0
1 4 . 0
G
F
G a i n F l a t n e s s
f = 0 . 1 - 4 . 0 G H z
d B
+ / 1 . 0
B W 3 d B
3 d B B a n d w i d t h
G H z
6 . 5
P
1 d B
O u t p u t P o w e r a t 1 d B C o m p r e s s i o n
f = 2 . 0 G H z
d B m
1 4 . 0
N F
N o i s e F i g u r e
f = 2 . 0 G H z
d B
5 . 5
6 . 0
V S W R
I n p u t / O u t p u t
f = 0 . 1 - 6 . 5 G H z
-
1 . 5 : 1
I P
3
T h ir d O r d e r I n t e r c e p t P o i n t
f = 2 . 0 G H z
d B m
2 7 . 0
T
D
G r o u p D e l a y
f = 2 . 0 G H z
p s e c
1 0 0
I S O L
R e v e r s e I s o l a t i o n
f = 0 . 1 - 6 . 5 G H z
d B
2 0
V
D
D e v i c e V o l t a g e
V
3 . 5
4 . 0
4 . 5
d G / d T
D e v i c e G
a i n
T e m p e r a t u r e C o e f f i c i e n t
d B
/ d e g C
- 0 . 0 0 1 8
d V / d T
D e v i c e V o l t a g e T e m p e r a t u r e
C o e f f i c i e n t
m V / d e g C
- 4 . 0
50 Ohm Gain Blocks
Output Power vs. Frequency
12
13
14
15
16
0.5
1
1.5
2
4
6
8
10
dBm
GHz
5-25
Noise Figure vs. Frequency
5
5.5
6
6.5
7
7.5
8
0.1
0.5
1
1.5
2
4
6
8
10
dB
GHz
|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
TOIP vs. Frequency
Typical S-Parameters Vds = 4.0V, Ids = 50mA
SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
-25
-20
-15
-10
-5
0
0.1
0.5
1
1.5
2
4
6
8
10
12
13
14
15
16
17
18
0.1
0.5
1
1.5
2
4
6
-20
-15
-10
-5
0
0.1
0.5
1
1.5
2
4
6
8
10
24
25
26
27
28
0.1
0.5
1
1.5
2
4
6
8
10
dB
GHz
GHz
dB
dBm
dB
GHz
GHz
GHz
dB
F re q G H z
|S 11 |
S 11 A n g
|S 2 1 |
S 2 1 A n g
|S 1 2 |
S 1 2 A n g
|S 2 2 |
S 2 2 A n g
.1 0 0
0 .11 4
1 5 7
6 .8 8 5
1 6 6
0 .0 8 2
-7
0 .0 8 3
1 4 5
.2 5 0
0 .1 4 5
1 3 5
6 .7 8 5
1 4 2
0 .0 9 8
-1 4
0 .0 9 5
1 2 6
.5 0 0
0 .1 5 2
11 4
6 .6 5 9
1 3 9
0 .1 0 6
-2 8
0 .11 7
11 5
1 .0 0
0 .1 7 1
5 7
6 .4 6 7
1 0 1
0 .1 0 6
-5 3
0 .1 4 1
6 2
1 .5 0
0 .1 8 2
1
6 .2 5 9
6 0
0 .1 0 6
-8 3
0 .1 6 6
5
2 .0 0
0 .1 7 0
-5 0
6 .1 0 3
2 2
0 .1 0 8
-1 0 9
0 .1 7 3
-4 6
4 .0 0
0 .0 8 7
3 8
5 .1 3 0
-1 3 2
0 .11 4
1 3 2
0 .1 4 6
7 3
6 .0 0
0 .1 3 0
-7 6
4 .1 0 7
8 1
0 .111
1 2
0 .2 6 0
-1 0 8
8 .0 0
0 .2 0 8
-1 3 2
3 .6 8 8
-7 2
0 .1 0 8
-11 9
0 .1 0 3
-2 2
1 0 .0 0
0 .3 9 1
-1 4 9
2 .9 6 2
11 8
0 .0 8 1
9 9
0 .3 4 6
1 7 7
50 Ohm Gain Blocks
5-26
-30
-25
-20
-15
-10
-5
0
0.1
0.5
1
1.5
2
3
4
6
12
13
14
15
16
17
0.2
0.5
1.0
1.25
1.5
1.75
2.0
60mA
50mA
40mA
30mA
25mA
SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25
C
Absolute Maximum Ratings
Part Number
Devices Per Reel
Reel Size
SNA-276-TR1
1000
7"
SNA-276-TR2
3000
13"
SNA-276-TR3
5000
13"
Part Number Ordering Information
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
MTTF vs. Temperature @ Id = 50mA
Thermal Resistance (Lead-Junction): 556 C/W
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Typical Biasing Configuration
Device Voltage vs. Id
3
3.5
4
4.5
5
25
30
40
50
60
70
80
Power Gain vs. Device Current
Vd
mA
GHz
dB
P a r a m e te r
A b s o lu te
M a x im u m
D e vic e C ur re nt
7 0 m A
P o w e r D issipa tion
3 2 0m W
R F In p ut P o w er
1 0 0m W
Ju n ction Te m p e ra ture
+2 0 0 C
O p e ra tin g Te m p e ra tu re
-4 5 C to +8 5 C
S to ra g e Te m pe ra tu re
-6 5 C to +1 5 0 C
Lead Temperature
Junction
Temperature
MTTF (hrs)
+45C
+155C
1000000
+80C
+190C
100000
+110C
+220C
10000
50 Ohm Gain Blocks
Pin Designation
1
RF in
2
GND
3
RF out and
Bias
4
GND
R e c o m m e n d e d B ia s R e s is to r Va lu e s
Su p p ly
Vo lta g e (Vs )
5 V
7 .5 V
9 V
1 2 V
1 5 V
2 0 V
R b ia s (O h m s )
2 0
7 0
1 0 0
1 6 0
2 2 0
3 2 0
5-27
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