The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
1
Product Description
Preliminary
EDS-101429 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
SPA-1318
2150 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
On-chip Active Bias Control
Power Control Allows Power Consumption
Reduction
Patented High Reliability GaAsHBT Technology
High Linearity Performance: +48dBm OIP3 Typ.
Surface-Mountable Plastic Package
Applications
W-CDMA Systems
Multi-Carrier Applications
Stanford Microdevices' SPA-1318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 2150 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
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2
Preliminary
Preliminary
SPA-1318 2150 MHz 1 Watt Power Amp.
EDS-101429 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
27
28
29
30
31
32
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
-40C
85C
8
9
10
11
12
13
14
2.11
2.1 2
2.13
2 .1 4
2 .1 5
2 .1 6
2 .17
25C
-40C
85C
-4 0
-3 5
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
2 .1 1
2 .1 2
2 .1 3
2 .1 4
2 .1 5
2 .1 6
2 .1 7
3 0
3 5
4 0
4 5
5 0
5 5
6 0
2 .1 1
2 .1 2
2 .1 3
2 .1 4
2 .1 5
2 .1 6
2 .1 7
25C
-40C
85C
0
10
20
30
40
50
60
5
9
13
17
21
25
25C
-40C
85C
0
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10 0
15 0
20 0
25 0
30 0
35 0
40 0
45 0
0
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2
3
4
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-40C
85C
P1dB vs Frequency
GHz
dBm
2150 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
GHz
dB
S11
S22
GHz
Gain vs. Frequency
dB
OIP3 vs. Frequency
(P
OUT
per tone = 14dBm)
GHz
dBm
OIP3 vs Tone Power
2.14 GHz
P
OUT
per tone (dBm)
dBm
S12
Device Current vs. Source Voltage
V
cc
(V)
Device Current (mA)
Preliminary
Preliminary
SPA-1318 2150 MHz 1 Watt Power Amp.
3
EDS-101429 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
-65
-60
-55
-50
-45
-40
-35
-30
16
19
22
25
Channel Output Power (dBm)
Adjacent Channel Power (dBc)
W-CDMA at 2.14 GHz
Adjacent Channel Power
vs. Channel Output Power
W-CDMA at 2.14 GHz
850-950 MHz Application Circuit Data
(Optimized for IP3), Icc=400mA, T=+25C, Vcc=5V,
The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH
4
Preliminary
Preliminary
SPA-1318 2150 MHz 1 Watt Power Amp.
EDS-101429 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Vcc
1.8pF
15 nH
8.2pF
10uF
68pF
22pF
5.6pF
1000pF
1.2 nH
8.2pF
5
6
7
8
4
3
2
1
360
Z=50
, 17.6
Voltage Feed Resistor Bias Circuit (for 5V supply)
2110 -2170 MHz Schematic
2110 -2170 MHz Evaluation Board Layout
Vcc
SOIC-8 PA
ECB-101161 Rev. B
Eval Board
1.8pF
8.2pF
10uF Tantalum
22pF
68pF
Vpc
Vbias
1000pF
15nH
1.2nH
5.6pF
8.2pF
360
Preliminary
Preliminary
SPA-1318 2150 MHz 1 Watt Power Amp.
5
EDS-101429 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
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NETWORK
Absolute Maximum Ratings
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Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
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(max) < (T
J
- T
OP
)/R
th
,j-l
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
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