The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
Preliminary
Preliminary
Product Description
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1
726 Palomar Ave., Sunnyvale, CA 94085
EDS-101772 Rev. A
5
10
15
20
25
30
35
0
2
4
6
8
10
3V,20mA
5V,40mA
l
o
b
m
y
S
C
5
2
=
T
,
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1
SPF-3043
Low Noise pHEMT GaAs FET
Product Features
DC-10 GHz Operation
Ultra Low NF:
0.25 dB @ 1 GHz
0.50 dB @ 2 GHz
High Assoc. Gain:
25 dB @ 1 GHz
22 dB @ 2 GHz
Low Current Draw for NFopt (3V,20mA)
+32 dBm OIP3, +20 dBm P1dB (5V,40mA)
Low Cost High Performance pHEMT
Applications
LNA for Wireless Infrastructure
Fixed Wireless Infrastructure
Wireless Data
Driver Stage for Low Power Applications
Stanford Microdevices' SPF-3043 is a high performance
0.25
m pHEMT Gallium Arsenide FET. This 300m device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device
delivers excellent OIP3 of 32dBm. It provides ideal
performance as a driver stage in many commercial and
industrial LNA applications.
Typical Gain Performance
Frequency (GHz)
Gain, Gmax (dB)
Gmax
Gain
Qualification Pending April 2001
SPF-3043 Low Noise pHEMT GaAs FET
Preliminary
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
2
726 Palomar Ave., Sunnyvale, CA 94085
EDS-101772 Rev. A
5
10
15
20
25
30
35
0
2
4
6
8
10
-60
-50
-40
-30
-20
-10
0
5
10
15
20
25
30
35
0
2
4
6
8
10
-60
-50
-40
-30
-20
-10
0
Typical Performance
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50
. The data represents typical performace of the device. De-
embedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
Gain, Gmax (dB)
Gain vs Frequency (3V,20mA)
Gain, Gmax (dB)
Gain vs Frequency (5V,40mA)
Gain
Gmax
Gain
Gmax
Frequency (GHz)
Frequency (GHz)
S11,S22 vs Frequency (3V,20mA)
S11,S22 vs Frequency (5V,40mA)
Isolation (dB)
Isolation (dB)
0.0
0.2
0.5
1.0
2.0
5.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
1 GHz
4 GHz
10 GHz
8 GHz
6 GHz
3 GHz
2 GHz
S11
S22
0.0
0.2
0.5
1.0
2.0
5.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
1 GHz
4 GHz
10 GHz
8 GHz
6 GHz
3 GHz
2 GHz
S11
S22
Isolation
Isolation
Typical Performance
q
e
r
F
)
z
H
M
(
V
S
D
)
V
(
I
S
D
)
A
m
(
n
i
m
F
)
B
d
(
T
P
O
g
a
M
g
n
A
r
N
x
a
m
G
)
B
d
(
B
d
1
P
)
m
B
d
(
3
P
I
O
)
m
B
d
(
0
0
9
3
0
2
5
2
.
0
9
7
.
0
2
1
2
2
.
0
5
.
5
2
5
.
5
1
9
2
5
0
4
2
3
.
0
5
7
.
0
2
1
5
2
.
0
5
.
6
2
0
.
0
2
2
3
0
0
9
1
3
0
2
0
5
.
0
2
6
.
0
4
3
9
1
.
0
4
.
2
2
5
.
5
1
9
2
5
0
4
4
5
.
0
2
6
.
0
3
3
0
2
.
0
3
.
3
2
0
.
0
2
2
3
SPF-3043 Low Noise pHEMT GaAs FET
Preliminary
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3
726 Palomar Ave., Sunnyvale, CA 94085
EDS-101772 Rev. A
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
L
C
5. DIE IS FACING UP FOR MOLD AND FACING DOWN
2.25
L
C
6. PACKAGE SURFACE TO BE MIRROR FINISH.
FOR TRIM/FORM. ie :REVERSE TRIM/FORM.
SYMBOL
4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70.
2. DIMENSIONS ARE INCLUSIVE OF PLATING.
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH
1. ALL DIMENSIONS ARE IN MILLIMETERS.
& METAL BURR.
NOTE:
0.25
0.10
0.10
0.00
0.80
1.80
0.80
1.85
1.15
MIN
b
c
e
Q1
A2
A1
HE
A
D
E
0.65 BSC
0.40
0.18
0.40
0.10
1.00
2.40
1.10
1.35
MAX
L
0.10
0.30
b1
0.55
0.70
D
e
HE
A2
e
E
b
b1
L
C
Q1
A
A1
Package Dimensions
F3
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
e
u
l
a
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1
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Pin Description
Part Number Ordering Information
r
e
b
m
u
N
t
r
a
P
e
z
i
S
l
e
e
R
l
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/
s
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c
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D
3
4
0
3
-
F
P
S
"
7
0
0
0
3
The part will be symbolized with an "F3" and a
Pin 1 indicator on the top surface of the package.
Part Symbolization
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
1
4
2
3
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