Product Description
Stanford Microdevices' SSW-108 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch
housed in a low-cost surface-mountable small outline
plastic package.
This single-pole, double-throw, non-reflective switch
consumes less than 50uA and operates at -5V and 0V for
control bias. Its high isolation and low insertion loss
makes it ideal for T/R switching in analog and digital
wireless communication systems.
The die is fabricated using 0.5 micron FET process with
gold metallization and silicon nitride passivation to achieve
excellent performance and reliability.
SSW-108
DC-4 GHz High Isolation
GaAs MMIC SPDT Switch
Product Features
High Isolation: 32dB at 2GHz
Low DC Power Consumption
Non-reflective
Broadband Performance - True DC Operation
Low Cost Small Outline Plastic Package
Applications
Analog/Digital Wireless System
Spread Spectrum
GPS
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s
U n i t s
M i n .
T y p .
M a x .
I n s
I n s e r t i o n L o s s
f = 0 . 0 5 - 1 . 0 G H z
f = 1 . 0 - 2 . 0 G H z
f = 2 . 0 - 4 . 0 G H z
d B
d B
d B
0 . 8
0 . 9
1 . 4
1 . 3
1 . 4
I s o l
I s o l a t i o n
f = 0 . 0 5 - 1 . 0 G H z
f = 1 . 0 - 2 . 0 G H z
f = 2 . 0 - 4 . 0 G H z
d B
d B
d B
3 0
2 2
4 0
3 5
2 5
V S W R o n
I n p u t & O u t p u t V S W R
( o n o r l o w l o s s s t a t e )
f = 0 . 0 5 - 1 . 0 G H z
f = 1 . 0 - 2 . 0 G H z
f = 2 . 0 - 4 . 0 G H z
1 . 1 5
1 . 2 5
1 . 5 0
V S W R o f f
I n p u t & O u t p u t V S W R
( o f f o r i s o l a t e d s t a t e )
f = 0 . 0 5 - 1 . 0 G H z
f = 1 . 0 - 2 . 0 G H z
f = 2 . 0 - 4 . 0 G H z
1 . 1 5
1 . 2 5
1 . 5 0
P 1 d B
O u t p u t P o w e r a t 1 d B C o m p r e s s i o n
f = 0 . 5 - 4 . 0 G H z
V = - 5 V
V = - 8 V
d B m
d B m
+ 2 6
+ 2 9
T O I P
T h i r d O r d e r I n t e r c e p t P o i n t
f = 0 . 5 - 4 . 0 G H z
V = - 5 V
V = - 8 V
d B m
d B m
+ 4 5
+ 4 8
I d
D e v i c e C u r r e n t
u A
4 0
I s w
S w i t c h i n g S p e e d
5 0 % c o n t r o l t o 1 0 % / 9 0 % R F
n s e c
3
Switches
Isolation vs. Frequency
V
Control
= -5 V
GHz
dB
-70
-60
-50
-40
-30
-20
DC
1
2
3
4
7-5
P i n
F u n c t i o n
1
GN D
2
J 1
3
GN D
4
GN D
5
J 2
6
V 1
7
V 2
8
J 3
Pin Out
Absolute Maximum Ratings
V 1
V 2
J 1 - J 2
J 1 - J 3
0
- 5
L o w L o s s
I s o l a t i o n
- 5
0
I s o l a t i o n
L o w L o s s
Truth Table
SSW-108 DC-4 GHz Absorptive SPDT GaAs Switch
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
R F I n p u t P o w e r
2 W M a x > 5 0 0 M H z
C o n t r o l V o l t a g e
- 1 0 V
O p e r a t i n g
Te m p e r a t u r e
- 4 5 C t o + 8 5 C
S t o r a g e
Te m p e r a t u r e
- 6 5 C t o + 1 5 0 C
T h e r m a l R e s i s t a n c e
2 0 d e g C / W
dB
GHz
Insertion Loss vs. Frequency
V
Control
= -5 V
On Port Input/Output VSWR vs. Frequency
V
Control
= -5 V
GHz
-2.0
-1.5
-1.0
-0.5
0.0
DC
1
2
3
4
1.0
1.2
1.4
1.6
1.8
2.0
DC
1
2
3
4
Switches
Switch Schematic
7-6
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