Preliminary
Product Description
1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-100622 Rev E
SXA-289
5-2000 MHz Medium Power
GaAsHBT Amplifier
Product Features
Patented High Reliability GaAs HBT Technology
High Output 3rd Order Intercept : +41.5 dBm typ.
at 1960 MHz
Surface-Mountable Power Plastic Package
Applications
PCS, Cellular Systems
High Linearity IF Amplifiers
Stanford Microdevices' SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
0
5
10
15
20
25
30
35
40
45
850 MHz
1960 MHz
Typical IP3, P1dB, Gain
dBm
IP3
IP3
P1dB
P1dB
Gain(dB)
Gain(dB)
l
o
b
m
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S
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8
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0
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8
1
0
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0
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5
1
5
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1
2
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1
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R
W
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1
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:
7
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=
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1
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
2
522 Almanor Ave., Sunnyvale, CA 94085
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
-35
-30
-25
-20
-15
-10
-5
0
5
800
850
900
950
15
17
19
21
23
25
800
825
850
875
900
925
950
36
38
40
42
44
0
3
6
9
12
15
35
37
39
41
43
45
800
825
850
875
900
925
950
21
22
23
24
25
26
800
825
850
875
900
925
950
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
25C
-40C
85C
P1dB vs Frequency
MHz
dBm
850 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
MHz
dB
S11
S22
MHz
Gain vs. Frequency
dB
25C
85C
-40C
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
P
OUT
per tone (dBm)
dBm
S12
25C
85C
25C
85C
-40C
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
-40C
85C
-40C
25C
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3
522 Almanor Ave., Sunnyvale, CA 94085
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
-35
-30
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
10
12
14
16
18
20
1930
1940
1950
1960
1970
1980
1990
34
36
38
40
42
44
0
3
6
9
12
15
36
38
40
42
44
1930
1940
1950
1960
1970
1980
1990
21
22
23
24
25
26
1930
1940
1950
1960
1970
1980
1990
1960 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
P1dB vs Frequency
MHz
dBm
MHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs Frequency
MHz
S11
S22
25C
85C
-40C
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
P
OUT
per tone (dBm)
dBm
S12
25C
85C
25C
85C
-40C
-40C
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
25C
-40C
85C
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
85C
25C
-40C
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4
522 Almanor Ave., Sunnyvale, CA 94085
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
y
c
n
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u
q
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r
F
0
5
8
z
H
M
)
B
d
(
n
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)
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(
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8
.
2
2
-
)
m
B
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(
3
P
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p
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*
7
.
7
3
)
m
B
d
(
B
d
1
P
0
.
3
2
850 MHz Application Circuit
s
e
u
l
a
V
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p
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7
V
8
V
0
1
V
2
1
)
s
m
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O
(
s
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8
1
7
2
7
4
2
6
g
n
it
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R
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w
o
P
W
5
.
0
W
0
.
1
W
5
.
1
W
0
.
2
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
Active Current Feedback Bias Circuit (for 5V supply)
850 MHz Schematic
850 MHz Active Bias Evaluation Board Layout
SXA-289
220
1.8 K
750
100 pF
5.6 pF
100 pF
33 nH
Rbias=4.3
0.1
F
(SIZE A)
68 pF
1000 pF
Vs = 5V
1
2
3
4
6
5
(Rohm)
UMZ1N
Z=50
, 12.9
Vdev
Voltage Feed Resistor Bias Circuit (for > 7V supply)
850 MHz Schematic
850 MHz Evaluation Board Layout
SXA-289
100 pF
100 pF
33 nH
Rbias
Vs
5.6 pF
Z=50
, 12.9
180
390
0.1
F
(SIZE A)
1000pF
68pF
33 nH
RFout
RFin
100pF
100pF
68 pF
1000pF
0.1uF
Rbias
33nH
33nH
390 Ohms
180 Ohms
SXA-289
5.6pF
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
68pF
1000pF
0.1 uF
100pF
100pF
33nH
5.6pF
4.3
1.8K
750
220
1
UMZ1N
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
RF IN
RF OUT
GND
VCC
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5
522 Almanor Ave., Sunnyvale, CA 94085
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
RFout
RFin
68pF
68pF
22pF
1000pF
0.1uF
Rbias
22nH
22nH
390 Ohms
180 Ohms
SXA-289
1.8pF
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
y
c
n
e
u
q
e
r
F
0
6
9
1
z
H
M
)
B
d
(
n
i
a
G
l
a
n
g
i
S
ll
a
m
S
9
.
4
1
)
B
d
(
s
s
o
L
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r
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t
e
R
t
u
p
n
I
1
.
2
1
-
)
m
B
d
(
3
P
I
t
u
p
t
u
O
*
0
.
8
3
)
m
B
d
(
B
d
1
P
3
.
3
2
1960 MHz Application Circuit
s
e
u
l
a
V
r
o
t
s
i
s
e
R
s
a
i
B
d
e
d
n
e
m
m
o
c
e
R
)
s
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
V
7
V
8
V
0
1
V
2
1
)
s
m
h
O
(
s
a
i
b
R
8
1
7
2
7
4
2
6
s
g
n
it
a
R
r
e
w
o
P
W
5
.
0
W
0
.
1
W
5
.
1
W
0
.
2
Active Current Feedback Bias Circuit (for 5V supply)
1960 MHz Schematic
1960 MHz Active Bias Evaluation Board Layout
SXA-289
220
1.8 K
750
68 pF
1.2 pF
22nH
Rbias=4.3
0.1
F
(SIZE A)
22 pF
1000 pF
Vs = 5V
1
2
3
4
6
5
(Rohm)
UMZ1N
68pF
Z=50
, 45.5
Vdev
Voltage Feed Resistor Bias Circuit (for > 7V supply)
1960 MHz Schematic
1960 MHz Evaluation Board Layout
SXA-289
68 pF
22nH
Rbias
Vs
1.8 pF
68pF
Z=50
, 45.5
22nH
1000pF
390
180
0.1
F
(SIZE A)
22pF
1
22pF
1000pF
0.1 uF
UMZ1N
220
750
1.8K
4.3
68pF
68pF
1.2pF
22nH
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
RF IN
RF OUT
GND
VCC
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
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