10
CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL
n
Photo Transistor (Through-Hole Shape)
l
Part Number
Prefix
Collector
Dissipation
Pd
Collector-Emitter
Breakdown
Voltage
V
CEO
Emitter-Collector
Breakdown
Voltage
V
ECO
Collector
Current
I
C
Operating
Temp.
T
opr
Storage
Temp.
T
stg
Wavelength
of Peak
Sensitivity
l
p TYP
Dark
Current
I
CEO
Response Time
tr tf
Type
MAX.
I
CEO
V
CE
I
C
R
L
502
PS
Unit
100
60
mW
30
30
V
5
5
V
30
20
mA
-30~+85
-30~+85
C
-30~+100
-30~+100
C
0.2
0.2
m
A
10
10
V
TYP.
5
5
m
sec
10
10
V
2
2
mA
100
100
W
880
880
nm
Ta=25C (Excl:
T
opr and
T
stg)
Ta=25C (Excl:
T
opr and
T
stg)
Absolute Maximum Ratings
Electro-Optical Characteristics
n
Photo Transistor (SMT Shape)
l
Part Number
Prefix
Collector
Dissipation
Pd
Collector-Emitter
Breakdown
Voltage
V
CEO
Emitter-Collector
Breakdown
Voltage
V
ECO
Collector
Current
I
C
Operating
Temp.
T
opr
Storage
Temp.
T
stg
Wavelength
of Peak
Sensitivity
l
p TYP
Dark
Current
I
CEO
Response Time
tr tf
MAX.
I
CEO
V
CE
I
C
R
L
PS
Unit
Absolute Maximum Ratings
Electro-Optical Characteristics
75
TYP.
mW
30
V
5
V
20
mA
-30~+85
C
-30~+90
C
0.1
m
A
10
V
9
m
sec
10
V
2
mA
100
W
880
nm
n
Pin Photo Diode (Through-hole Shape)
l
Part Number
Prefix
Power
Dissipation
Pd
Reverse
Voltage
V
R
Operating
Temp.
T
opr
Storage
Temp
T
stg
Wavelength
of Peak
Sensitivity
l
p
PP
Unit
Absolute Maximum Ratings
Electro-Optical Characteristics
Photo Current
IP
V
R
TYP.
Ee
Response Time
tr tf
V
R
TYP.
R
L
Capacitance
C
T
V
R
TYP.
f
Dark Current
I
D
V
R
MAX.
V
R
TYP.
V
nm
V
nA
MHz
V
pF
W
V
nsec
mW/cm
2
V
m
A
C
V
mW
n
Pin Photo Diode (SMT Shape)
l
Part Number
Prefix
Power
Dissipation
Pd
Reverse
Voltage
V
R
Operating
Temp.
T
opr
Storage
Temp
T
stg
Wavelength
of Peak
Sensitivity
l
p
PP
Unit
Absolute Maximum Ratings
Electro-Optical Characteristics
Photo Current
IP
V
R
TYP.
Ee
v
Response Time
tr tf
V
R
TYP.
R
L
Capacitance
C
T
V
R
TYP.
f
Dark Current
I
D
V
R
MAX.
V
R
TYP.
V
nm
V
nA
MHz
V
pF
W
V
nsec
mW/cm
2
V
m
A
C
V
mW
30
15
-30~+85
-30~+90
4
5
5
50
10
1000
3
10
1
10
10
950
0
Ta=25C (Excl:
T
opr and
T
stg)
vA standard tungsten filament lamp with color temperature 2856K is used.
n
Spectral Distribution
1.0
0.5
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
FH/KR NR
DR/DNF/DNH
DNK
DNP
AN
Wavelength
l
(nm)
Emitter:
Relative Radiant Intensity
Detector:
Relative Spectral Sensitivity
PP
PS
PP/PS
w/ visible radiation
cut filter
Specifications vary according to a part type
15
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
n
Photo Transistor
Unit
nm
mA
V
m
s
mW/cm
2
Part No.
Features
Wavelength
of
Peak Sensitivity
l
P TYP.
V
CE
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP.
TYP.
Shape
fig.
MIN.
Ee
Photo Current
I
C
Response
Time
tr tf
v
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
90
30
0
30
60
60
90
0.5
90
60
30
0
30
60
90
0.5
90
60
30
0
30
60
90
0.5
PS1101WA
PS1101RA
PS1191RA
PS1192FA
PS1102HA
PS1192HA
--
Reverse Mount
Reverse Mount
with visible radiation cut
filter under 700nm
Side view package
with visible radiation cut
filter under 700nm
Compact size
Compact size
with visible radiation cut
filter under 700nm
880
880
900
900
880
900
0.7
0.4
0.4
1.4
0.4
0.4
3.5
2.0
2.0
7.0
2.0
2.0
5
5
5
5
5
5
5
5
5
5
5
5
8/9
8/9
8/9
8/9
8/9
8/9
1
2
2
3
4
4
n
Pin Photo Diode
Unit
nm
mA
V
ns
mW/cm
2
Part No.
Features
Wavelength
of
Peak Sensitivity
l
P TYP.
V
CE
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP.
Shape
fig.
MIN.
Ee
Photo Current
I
C
TYP.
Response
Time
tr tf
90
60
30
0
30
60
0.5
90
PP1101W
--
950
2.0
4.0
5
5
50
5
v
Ic=2mA, V
CE
=10V, R
L
=100
W
v
All above products contain no lead
Ta= 25C
Ta= 25C
v
Product contains no lead
16
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
n
Package Dimensions
unit: mm
2
3
Emitter Mark
Emitter
Collector
1.5
0.9
2
1.5
0.6
1
Detector Chip
(0.9)
(5)
(2)
Tolerance:
0.2
fig. 1
0.75
Collector
Polarity Mark
Emitter
Cathode Mark
3.2
1.6
0.8
0.3
1.4
0.5
0.5
(1.5)
(1.6)
(2.1)
(2.3)
(1.5)
Hole
Detector Chip
Tolerance:
0.1
fig. 2
R0.9
(2)
2.5
0.2
0.6
0.2
3
0.2
(0.25)
(0.25)
0.3
0.15
0.3
0.15
0.5
0.15
1
0.15
0.25
0.15
0.25
0.15
(0.9)
(0.2)
(1.1)
(2)
(5)
Emitter
Collector
(0.9)
fig. 3
Collector
Emitter
Polarity Mark
Emitter Mark
2
0.1
1.25
0.1
0.3
0.1
1.3
0.1
1.2
0.1
0.35
0.1
0.35
0.1
(1.1)
(3.4)
(1.3)
Detector Chip
0.8
+0.1
-0.05
fig. 4
Recommended Soldering Pattern
Recommended Soldering Pattern
Recommended Soldering Pattern
Recommended Soldering Pattern
PCB Warpage Direction
PCB Warpage Direction
PCB Warpage Direction
PCB Warpage Direction
17
SMT SHAPE - PHOTO TRANSISTOR AND PIN PHOTO DIODE
n
Package Dimensions
Tolerance:
0.2
2
3
Anode Mark
1.5
0.9
2
1.5
0.6
1
Detector Chip
(0.9)
(5)
(2)
fig. 5
unit: mm
1101W-1102W
1105W-RR
Center
Hole
(1.8)
(3.5)
(0.5)
Center
Hole
1.7
5
+
0.1
8+
0.2
2 + 0.05
4 + 0.1
4 + 0.1
f
1.5
+0.1
0
3.5
+
0.0
5
)
(1.45
(0.2)
f
1.1)
(
Direction to pull
1101RA-1191RA
(0.2)
(2.25)
(
f
1.0)
Center
Hole
(1.45)
(1)
4+0.1
f
1.5
+0.1
0
8
+
0
.2
2+0.05
4+0.1
3.5
+0.05
1.75
+
0.1
Direction to pull
Center Hole
1102HA-1192HA
Quantity per Reel: 2,500
Quantity per Reel: 3,000
Quantity per Reel: 3,000
Quantity per Reel: 4,000
n
Taping Specifications
unit: mm
(0.2)
(1.7)
(1.8)
(3.35)
Center
Hole
f
1.1)
(
4+0.1
1.75
+
0.1
f
1.5
+0.1
0
8
+
0
.2
2+0.05
4+0.1
3.5
+
0.05
Direction to pull
4 + 0.1
4 + 0.1
3.5 + 0.05
1.75 + 0.1
8 + 0.2
2 + 0.05
Direction to pull
(2.8)
(0.2)
(1.4)
(
f
1.1)
(3.35)
f
1.5
+0.1
0
Center Hole
Center Hole
f
21+0.8
9+0.3
11.4+1
f
13+0.2
f
180
+0
3
f
60
+
1
-0
f
13+0.2
2+0.5
n
Reel Specifications
unit: mm
1101WA
Recommended Soldering Pattern
Recommended Soldering Pattern
1192FA
PCB Warpage Direction
22
THROUGH-HOLE SHAPE - PHOTO TRANSISTOR
n
Photo Transistor
Unit
nm
mA
V
m
s
mW/cm
2
Part No.
Features
Wavelength
of
Peak Sensitivy
l
P TYP.
V
CE
Spatial Distribution
(The typical distribution example of
each shape is shown below)
TYP.
Shape
fig.
MIN.
Ee
Photo Current
I
C
Response
Time
tr tf
v
90
60
30
0
30
60
90
90
60
30
0
30
60
90
0.5
0.5
0.5
90
60
30
0
30
60
90
90
60
30
0
30
60
90
90
60
30
0
30
60
90
0.5
0.5
60
30
0
30
60
0.5
90
90
90
60
30
0
30
60
90
0.5
PS3022
PS3322
PS3072
PS4032
PS5022
PS5042
PS5042-2
f
5 package
High photo current
f
3 package
Narrow distribution
f
3 package
Wide distribution
f
3 package
Flat lens
Double-end
Side-view
Side view
package with visible
radiation cut filter
under 800nm
880
880
880
880
880
880
930
1.5
1.2
0.2
1.5
0.4
0.4
0.13
7.0
3.6
0.7
5.0
2.0
1.4
0.4
5
5
5
5
5
5
5
1
1
1
10
1
1
1
5
5
5
5
5
5
5
1
2
3
4
5
6
6
v
Ic=2mA, V
CE
=10V, R
L
=100
W
Ta= 25C
v
All above products contain no lead
* Lead-free soldering compatible product
*
*
*
*
*
*
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